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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Package Type: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise figure that operates off of a single position DC power supply.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: PHEMT, Other
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: PHEMT, Other
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical DBS and other wireless RF applications. NF=1.0dB, Ga=9.4dB, P1dB= 5dBm at 2V, 15mA (12 GHz)
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: Richardson RFPD
Description: The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminum gate features low resistance and excellent reliability. The device shows a very high transconductance which
- Package Type: Other
- Transistor Type: PHEMT
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Supplier: Microchip Technology, Inc.
Description: MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure
- Package Type: Other
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain,
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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Supplier: Microchip Technology, Inc.
Description: The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB
- Package Type: Other
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Supplier: Qorvo
Description: The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return
- Operating Frequency: 45 to 1218 MHz
- Output Power: 63.1 watts
- Package Type: Other
- Power Gain: 36 dB
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Supplier: ODG (Origin Data Global)
Description: SMT LOW NOISE AMPLIFIER, 400 - 3
- Package Type: Other
- Transistor Type: MOSFET, MOSFET RF Transistors, PHEMT, Other
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65048-360LF is being discontinued and is not recommended for new designs. The SKY65048-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad Flat
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 700 to 1200 MHz
- Maximum Gain: 16.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 0.0 to 28000 MHz
- Maximum Gain: 16.5 dB
- Maximum Operating Voltage: 7 volts
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Supplier: Richardson RFPD
Description: The MMA043AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) low-noise wideband amplifier die that operates between 0.5 GHz and 12 GHz. The MMA043AA die provides 16.5 dB of gain, 1.4 dB noise figure, and 29 dBm output IP3. The
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 500 to 12000 MHz
- Maximum Gain: 16.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: RS Components, Ltd.
Description: frequency characteristics and are generally used in small-signal low-noise RF applications. HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type. The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT
- Package Type: Other
- Transistor Type: HEMT
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Supplier: RS Components, Ltd.
Description: frequency characteristics and are generally used in small-signal low-noise RF applications. HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type. The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT
- Package Type: Other
- Transistor Type: HEMT
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Supplier: RS Components, Ltd.
Description: frequency characteristics and are generally used in small-signal low-noise RF applications. HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type. The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT
- Package Type: Other
- Transistor Type: HEMT
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Supplier: RS Components, Ltd.
Description: frequency characteristics and are generally used in small-signal low-noise RF applications. HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type. The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT
- Package Type: Other
- Transistor Type: HEMT
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 190347-SKY65050-372L F Packaging: Reel - TR Voltage Rating: 6V Current Rating: 55mA Frequency: 2.4GHz Current - Test: 20mA Gain: 15.5dB Transistor Polarity: pHEMT FET Voltage - Test: 3V
- Package Type: SOT3, Other
- Polarity: Other
- Transistor Type: PHEMT
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Supplier: Utmel Electronic Limited
Description: Trans JFET 15V GaAs pHEMT 3-Pin PLD-1.5 T/R
- Polarity: N-Channel, Other
- Transistor Type: JFET, PHEMT
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The QPL1840 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 17 dB of gain and low noise from 5 MHz to 1800 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as (read more)
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Low phase noise K-Band oscillator on organic Liquid Crystal Polymer (LCP) substrate
B. Oscillator Design The S-parameters of a commercially available low noise pHEMT transistor VMMK-1225 from Avago Technologies were calculated by using its ADS transistor model available at the vendor's website.
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Silicon-germanium ICs for satellite microwave front-ends
This means that, despite advances in SiGe technologies, e.g. [6], an integrated receiver IC will most likely still be proceeded by at least one low noise pHEMT transistor , for the total noise figure to be competitive with fully discrete solutions.
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New generation of RF unit for radar altimeter
CONCLUSION The second generation ofradar altimeter developed by Alcatel uses the new technologies (MMICs, hybrid power HPA, low noise pHEMT transistors ) to obtain a very compact RF unit.
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A 5 GHz LNA for a radio-astronomy experiment
Several commercial low noise PHEMT transistors and the newly proposed Heterojunction Bipolar Transistor (HBT) were selected and tested to get the best noise performance.
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A subharmonic self-oscillating mixer using substrate integrated waveguide cavity for millimeter-wave application
The FET used here is the AFT36077, a low noise pHEMT transistor purchased from Agilent.
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Low cost microwave oscillator using substrate integrated waveguide cavity
The amplifier used here is the ATF36077 low noise pHEMT transistor from Agilent.
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Planck-LFI 44 GHz back end module
It includes waveguide to microstrip transition, GaAs pseudomorphic high electron mobility transistor ( PHEMT ) low noise amplifiers (LNA), bandpass filter, square-law detector and dc amplifier.
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Oscillator phase-noise reduction using low-noise high-Q active resonators
The negative-resistance circuits are implemented by using series feedback at the source terminals of low - noise pHEMT transistors in a common-gate configuration.
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Proton irradiation effects on advanced digital and microwave III-V components
MMIC: 0.15-btm Gate Length PHEMT Transistors Low - Noise Amplifier .
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RF MEMS from a device perspective
… MEMS switch with (a) a top-view shown, and higher magnification perspective views shown in its (b) ‘up’ blocking state and (c) ‘down’ pass-through state. . monolithically integrated with GaAs pseudomorphic high electron mobility transistor ( PHEMT ) low - noise amplifiers (LNA), as illustrated …