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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise figure that operates off of a single position DC power supply.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical DBS and other wireless RF applications. NF=1.0dB, Ga=9.4dB, P1dB= 5dBm at 2V, 15mA (12 GHz)
- Features: Other
- Transistor Type: PHEMT
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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Features: Other
- Transistor Type: PHEMT
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain,
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Microchip Technology, Inc.
Description: MMA085AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 40 GHz. It is ideal for test instrumentation and communications infrastructure
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65048-360LF is being discontinued and is not recommended for new designs. The SKY65048-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad Flat
- Frequency Range: 700 to 1,200 MHz
- Minimum Gain: 16.5 dB
- Maximum Gain: 16.5 dB
- Noise Figure: 0.65 dB
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Supplier: ODG (Origin Data Global)
Description: SMT LOW NOISE AMPLIFIER, 400 - 3
- Power Gain: 23.5 dB
- Noise Figure: 1.3 dB
- Operating Frequency: 400 to 3,900 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors, PHEMT
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Supplier: Qorvo
Description: performance with low noise and optimal reliability.
- Power Gain: 36 dB
- Output Power: 63.09573444801933 watts
- Operating Frequency: 45 to 1,218 MHz
- Transistor Type: HEMT, MESFET, PHEMT
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Supplier: Richardson RFPD
Description: The MMA043AA is a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) low-noise wideband amplifier die that operates between 0.5 GHz and 12 GHz. The MMA043AA die provides 16.5 dB of gain, 1.4 dB noise figure, and 29 dBm output IP3. The
- Frequency Range: 500 to 12,000 MHz
- Maximum Gain: 16.5 dB
- Output Power( P1dB): 17 dBm
- Noise Figure: 1.4 dB
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Supplier: Richardson RFPD
Description: The ADL7003 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced low noise amplifier that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADL7003 provides
- Frequency Range: 50,000 to 95,000 MHz
- Maximum Gain: 15 dB
- Output Power( P1dB): 14 dBm
- Noise Figure: 5.5 dB
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Supplier: Qorvo
Description: Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias
- Power Gain: 11.5 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Win Source Electronics
Description: Manufacturer: Freescale Semiconductor - NXP Win Source Part Number: 1226968-MRFG35010R1 Manufacturer Homepage: www.freescale.com Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
- Transistor Type: PHEMT
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Mini-Circuits Win Source Part Number: 893598-SAV-581+ Features: RF Mosfet E-pHEMT 3 V 30 mA 45MHz ~ 6GHz 22.3dB 20.5dBm SC-70-4 Package: Reel - TR Package: SC-82A, SOT-343 Categories: Discrete Semiconductor Products Case / Package: SC-70-4 ECCN: EAR99 Popularity: High Fake
- Transistor Type: MOSFET, MOSFET RF Transistors, PHEMT
- Features: Other
- Package Type: SOT3
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias
- Power Gain: 12 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Win Source Electronics
Description: Manufacturer: Freescale Semiconductor - NXP Win Source Part Number: 1226964-MRFG35003ANT1 Manufacturer Homepage: www.freescale.com Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
- Transistor Type: PHEMT
- Package Type: SOT3
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Supplier: Qorvo
Description: Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Win Source Electronics
Description: Manufacturer: Freescale Semiconductor - NXP Win Source Part Number: 1226967-MRFG35010NT1 Manufacturer Homepage: www.freescale.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
- Transistor Type: PHEMT
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R
- V(BR)DSS: 5 volts
- PD: 270 milliwatts
- TJ: -65 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: Utmel Electronic Limited
Description: Trans JFET 15V GaAs pHEMT 3-Pin PLD-1.5 T/R
- V(BR)DSS: 15 volts
- Number of Transistors in the Chip: 1
- Transistor Type: JFET, PHEMT
- Polarity: N-Channel
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The QPL1841 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 12 dB of gain and low noise from 5 MHz to 850 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (read more)
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The QPL1840 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 17 dB of gain and low noise from 5 MHz to 1800 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as (read more)
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Low phase noise K-Band oscillator on organic Liquid Crystal Polymer (LCP) substrate
B. Oscillator Design The S-parameters of a commercially available low noise pHEMT transistor VMMK-1225 from Avago Technologies were calculated by using its ADS transistor model available at the vendor's website.
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Silicon-germanium ICs for satellite microwave front-ends
This means that, despite advances in SiGe technologies, e.g. [6], an integrated receiver IC will most likely still be proceeded by at least one low noise pHEMT transistor , for the total noise figure to be competitive with fully discrete solutions.
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New generation of RF unit for radar altimeter
CONCLUSION The second generation ofradar altimeter developed by Alcatel uses the new technologies (MMICs, hybrid power HPA, low noise pHEMT transistors ) to obtain a very compact RF unit.
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A 5 GHz LNA for a radio-astronomy experiment
Several commercial low noise PHEMT transistors and the newly proposed Heterojunction Bipolar Transistor (HBT) were selected and tested to get the best noise performance.
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A subharmonic self-oscillating mixer using substrate integrated waveguide cavity for millimeter-wave application
The FET used here is the AFT36077, a low noise pHEMT transistor purchased from Agilent.
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Low cost microwave oscillator using substrate integrated waveguide cavity
The amplifier used here is the ATF36077 low noise pHEMT transistor from Agilent.
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Planck-LFI 44 GHz back end module
It includes waveguide to microstrip transition, GaAs pseudomorphic high electron mobility transistor ( PHEMT ) low noise amplifiers (LNA), bandpass filter, square-law detector and dc amplifier.
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Oscillator phase-noise reduction using low-noise high-Q active resonators
The negative-resistance circuits are implemented by using series feedback at the source terminals of low - noise pHEMT transistors in a common-gate configuration.
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Proton irradiation effects on advanced digital and microwave III-V components
MMIC: 0.15-btm Gate Length PHEMT Transistors Low - Noise Amplifier .
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RF MEMS from a device perspective
… MEMS switch with (a) a top-view shown, and higher magnification perspective views shown in its (b) ‘up’ blocking state and (c) ‘down’ pass-through state. . monolithically integrated with GaAs pseudomorphic high electron mobility transistor ( PHEMT ) low - noise amplifiers (LNA), as illustrated …