Low Noise RF Transistors

Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB,

• Features: Other
• Packing Method: Tape Reel

Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression

• Features: Other
• Packing Method: Tape Reel

Description: The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency fT =

• Features: Other
• Packing Method: Tape Reel

Description: Bipolar Transistors - BJT PNP Low Noise

• V_CEO: 60 volts
• I_C(max): 500 milliamps
• P_D: 625 milliwatts
• Number of Transistors in the Chip: 1

Description: RF LOW-NOISE SI TRANSISTOR

• Transistor Type: Bipolar RF Transistors

Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and

• Frequency Range: 450 to 6,000 MHz
• Minimum Gain: 15.5 dB
• Maximum Gain: 15.5 dB
• Noise Figure: 0.65 dB

Description: amplifier provides a 16 dB of gain, 3.5 dB noise figure, and 19 dBm of output power at 1 dB gain compression at 20 GHz while requiring only 180 mA from an 6 V supply. Output IP3 is typically 35 dBm. The MMA085AA amplifier features RF I/Os that are internally matched to 50 Ω.

• Features: Other

Description: TAV1-551+ is a low noise, high gain device manufactured using E-PHEMPT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise figure, particularly below 2.5 GHz, and when combining this noise figure with gain in a single device it

• Minimum Gain: 8.6 dB
• Maximum Gain: 21.6 dB
• Noise Figure: 0.5 to 1.4 dB
• Operating Temperature: -40 to 85 C

Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package

• Minimum Gain: 8.3 dB
• Maximum Gain: 22.3 dB
• Noise Figure: 0.4 to 1.5 dB
• Operating Temperature: -40 to 85 C

Description: NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For

• Features: Other
• Package Type: SOT143
• Packing Method: Tape Reel

Description: SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high

• Minimum Gain: 7.6 dB
• Maximum Gain: 20.9 dB
• Noise Figure: 0.5 to 1.8 dB
• Operating Temperature: -40 to 85 C

Description: Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice

• Minimum Gain: 11.5 dB
• Maximum Gain: 24.6 dB
• Noise Figure: 0.4 to 0.9 dB
• Operating Temperature: -40 to 85 C

Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current

• Frequency Range: 450 to 6,000 MHz
• Minimum Gain: 15.5 dB
• Maximum Gain: 18.5 dB
• Output Power( P_1dB): 14.400000000000006 dBm

Description: Please note: SKY65081-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65081-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.0 dB Noise

• Frequency Range: 2,000 to 3,000 MHz
• Minimum Gain: 14.3 dB
• Maximum Gain: 14.3 dB
• Noise Figure: 2 dB

Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include transistor, BJT, switching, amplification, Low-Power, Bipolar Transistor, Bipolar RF Transistors.

• T_J: 150 C
• Features: Bipolar RF Transistors, Other

Description: Please note: SKY65045-70LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY65162-70LF, SKY65173-70LF Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise, linearity,

• Frequency Range: 390 to 1,500 MHz
• Minimum Gain: 14 dB
• Maximum Gain: 14 dB
• Noise Figure: 1.8 dB

Description: Skyworks SKY65173-70LF is a high performance, wideband, low-noise, highly linear Power Amplifier (PA) driver. The device provides a 2.6 dB Noise Figure (NF) and an output power at 1 dB compression of +26.5 dBm, making the SKY65173-70LF ideal for use in the driver stage of

• Frequency Range: 869 to 960 MHz
• Minimum Gain: 16.5 dB
• Maximum Gain: 16.5 dB
• Noise Figure: 2.6 dB

Description: Silicon PNP Transistors

Description: Silicon PNP Transistors

Description: Silicon NPN Transistor Low Noises

Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-38143 is packaged in the miniature SOT-343 package.

• Features: Other
• Transistor Type: PHEMT

Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-34143 is packaged in the miniature SOT-343

• Features: Other
• Transistor Type: PHEMT

Description: Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 500 to 650V Super Junction MOSFETs, Low Noise Series

• V_(BR)DSS: 600 volts
• I_DSS: 20,000 milliamps
• Q_G: 59.99999999999999 nC
• P_D: 50,000 milliwatts

Description: This Low Current Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for receiver LNA or hybrid modules for handsets, Wireless LAN, fixed

• Transistor Grade / Operating Range: Commercial
• Features: Other
• Transistor Type: PHEMT

Description: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

• V_(BR)DSS: 600 volts
• I_DSS: 15,000 milliamps
• Q_G: 40 nC
• P_D: 40,000 milliwatts

Description: 0.45-6.0 GHz Low Noise Transistor

• Features: Other
• Transistor Type: PHEMT

Description: Bipolar Transistors - BJT Low-Noise Matched Transistor Array

• Features: Bipolar RF Transistors

Description: Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

• V_(BR)DSS: 600 volts
• I_DSS: 9,000 milliamps
• Q_G: 23 nC
• P_D: 40,000 milliwatts

Description: Low Noise RF Transistor NPN 12V SOT323

• Number of Transistors in the Chip: 1
• Features: General Purpose BJT, Other
• Polarity: NPN
• Package Type: SOT323

Description: BIASED LOW NOISE RF TRANSISTOR

• V_CEO: 13 volts
• Output Power: 0.12 watts
• Packing Method: Bulk Pack
• Features: General Purpose BJT, Other

Description: Low Noise Silicon Germanium Bipolar RF Transistor Product overview: BFP760 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for

• Features: Bipolar RF Transistors

Description: The Series C60 solid-state relay is an advanced design capable of switching very heavy loads in a physically small 6-pin mini DIP package. These relays have a power FET output that ensures low On resistance, no offset voltage and low leakage current. They are versatile and can be used

• Features: General Purpose BJT, Other

Description: Manufacturer: CEL Win Source Part Number: 811594-NE3514S02-A Packaging: Strip Voltage - Rated: 4V Frequency: 20GHz Current - Test: 10mA Gain: 10dB Transistor Type: HFET Voltage - Test: 2V Noise Figure: 0.75dB Part Status: Obsolete (End Of Life) Supplier Device Package: S02 Manufacturer

• Package Type: SOT3

Description: 800 MHz Input Capacitance: 2.8 pF Height: 1 mm Gain: 23 dB Noise Figure: 1.5 dB Number of Pins: 4 Width: 1.3 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-143 Alternative Parts (Cross-Reference): BF 2030R E6814BF2030R E6814; BF2030RE6814; Popularity:

• P_D: 200 milliwatts
• T_J: -55 C
• Features: MOSFET, Other
• Package Type: SOT3