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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz Small
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for low current applications Summary of Features For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz SIEGET® 25 GHz fT - Line Pb-free (RoHS compliant) package Potential Applications Wireless
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Infineon Technologies AG
Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB,
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Low Noise
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF LOW-NOISE SI TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SI TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SIGE:C TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- Noise Figure: Over 0.9000 dB
- Operating Frequency: 14000 MHz
- Output Power: 0.0750 watts
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: applications. The amplifier provides a 16 dB of gain, 3.5 dB noise figure, and 19 dBm of output power at 1 dB gain compression at 20 GHz while requiring only 180 mA from an 6 V supply. Output IP3 is typically 35 dBm. The MMA085AA amplifier features RF I/Os that are internally matched
- Package Type: Other
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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Supplier: Microchip Technology, Inc.
Description: The MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) low-noise wideband amplifier in a leadless 4 mm × 4 mm surface-mount package that operates between 0.5 GHz and 12 GHz. The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise
- Package Type: Other
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 18.5 dB
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY65173-70LF is a high performance, wideband, low-noise, highly linear Power Amplifier (PA) driver. The device provides a 2.6 dB Noise Figure (NF) and an output power at 1 dB compression of +26.5 dBm, making the SKY65173-70LF ideal for use in the driver stage of
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 869 to 960 MHz
- Maximum Gain: 16.5 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65080-70LF is being discontinued and is not recommended for new designs. Skyworks SKY65080-70LF is a high performance, ultra-wideband Power Amplifier (PA) driver with superior output power, low noise, linearity, and efficiency. The device provides a 2.3 dB Noise
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 1500 to 2500 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65045-70LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY65162-70LF, SKY65173-70LF Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise, linearity,
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 390 to 1500 MHz
- Maximum Gain: 14 dB
- Maximum Operating Voltage: 5 volts
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Quad NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN LOW NOISE 20V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: Broadcom Inc.
Description: Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets, mobile wireless devices and other low current
- Package Type: Other
- Polarity: Other
- Transistor Grade / Operating Range: Commercial
- Transistor Type: PHEMT
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Supplier: Richardson RFPD
Description: Low Noise Amplifier 22-38 GHz. The MAAL-011111 is a three stage 22 - 38 GHz GaAs MMIC low noise amplifier. This device has a small signal gain of 19 dB with a noise figure of 2.5 dB. This lead-free, 3 mm QFN package requires only a single positive bias supply. The
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 22000 to 38000 MHz
- Maximum Gain: 19 dB
- Maximum Operating Voltage: 3.3 volts
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-38143 is packaged in the miniature SOT-343 package.
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. The ATF-33143 is packaged in the miniature SOT-343
- Package Type: Other
- Transistor Grade / Operating Range: Other
- Transistor Type: PHEMT
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Description: BIASED LOW NOISE RF TRANSISTOR
- Output Power: 0.1200 watts
- Packing Method: Bulk Pack, Other
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Supplier: Richardson RFPD
Description: 0.45-6.0 GHz Low Noise Transistor
- Package Type: Other
- Transistor Type: PHEMT
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: DigiKey
Description: RF TRANSISTOR 15W 28V 8QFN
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 30 to 1215 MHz
- Maximum Gain: 20.9 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Rochester Electronics
Description: Biased Low Noise RF Transistor
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 30V Low Noise
- Packing Method: Other
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Supplier: RS Components, Ltd.
Description: GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 6000 MHz
- Maximum Gain: 21.6 dB
- Minimum Gain: 21.6 dB
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The ADM-8536PSM is the world's smallest 2-20 GHz high linearity, low noise amplifier solution, featuring 10.5 dB gain, +25 dBm OIP3 and 2.5 dB noise figure that makes it suitable for use in RF front ends. The amplifier is designed for ease of use due to its internal bias network, DC blocking and RF matching, while its compact 1.3 x 2 mm DFN package and low power consumption make it an ideal choice for low SWaP applications. (read more)
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
More Information Top
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Page 1. Semiconductor parts with 453 in root number
NPN SILICON LOW NOISE RF TRANSISTOR .
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Low Noise RF Transistor Now Available From Microsemi
Low Noise RF Transistor Now Available From Microsemi .
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Satellite-to-Ground Radiowave Propagation
GaAsFET Gallium arsenide field-effect transistor ( low noise RF transistor ) .
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Improved Particle Identification Using Cluster Counting in a Full-Length
Drift Chamber Prototype
So, an emitter follower stage was added at the input, using a low noise RF transistor (BFG425).
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Page 1. Semiconductor parts with 135 in root number
NPN SILICON LOW NOISE RF TRANSISTOR .
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Page 1. Semiconductor parts with 681 in root number
NPN SILICON LOW NOISE RF TRANSISTOR .
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Electronics for the camera of the First G-APD Cherenkov Telescope (FACT) for ground based gamma-ray astronomy
A low noise RF transistor in grounded-base circuit configuration provides current buffering.
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Infineon Launches Rugged High-Frequency Low Noise RF Transistors To Meet Demanding Requirements Of 5 GHz Wireless Applications
Infineon Launches Rugged High-Frequency Low Noise RF Transistors To Meet Demanding Requirements Of 5 GHz Wireless Applications .
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Radiometrs-polarimeters: principles of design and applications for sea surface microwave Emission Polarimetry
The receiver consists of RF section (in Ka-band we used superheterodyne receiver with IF amplifier, in Ku- and K- bands - low noise RF transistor amplifiers); LF section consisting of diode detector, LF amplifier, synchronous detector, and M= amplifier; control unit; data …
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http://www.mouser.com/catalog/supplier/library/pdf/STRF.pdf
NPN Si RF Transistor Low Noise Figure 2 .