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Supplier: MACOM
Description: MACOM’s line of hybrid amplifiers cover a frequency range of 10 kHz to 6 GHz. Each amplifier is designed to be unconditionally stable and have excellent cascadability. Our amplifiers are designed using thin film technology and are integrated amplifiers that include internal DC biasing circuitry
- Amplifier Type: Low Noise Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 2 to 6000 MHz
- Maximum Gain: 38.5 dB
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Supplier: Broadcom Inc.
Description: AMMP-6532 is an easy-to-use broadband intergrated receiver in a surface mount package. The MMIC includes a 4-stage LNA to provide gain amplification and a gate-pumped image-reject mixer for frequency translation.
- Applications: Mobile / Wireless Systems, Satellite Communications (SATCOM), Terrestrial RF/Microwave Systems
- Features: RoHS, Frequency Range Switch
- Form Factor / Package: Surface Mount Technology (SMT)
- Operating Frequency: 20 to 32 MHz
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Supplier: Networks International Corporation
Description: Type: Bandpass Center Frequency: 2300.000 (MHz) Bandwidth: (MHz) Mount: SMA Length: 5.750 (in) Width: 0.850 (in) Height: 1.100 (in) NIC's Duplexer-LNA assembly is designed for a variety of applications and integrates a high power cavity transmitter filter, receiver filter and low noise
- Filter Type: Bandpass
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Supplier: Networks International Corporation
Description: Type: Bandpass Center Frequency: 500.000-6000.000 (MHz) Mount: SMA NIC introduces its Wideband LNA designed for C Band, Radar and Satcom applications. This amplifier operates in the frequency range of 4 GHz â 5 GHz, providing high gain, low Noise Figure and is built in an extremely small
- Filter Type: Bandpass
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Supplier: Broadcom Inc.
Description: Avago’s AMMP-6522 is an easy-to-use broadband integrated receiver in a surface mount package. The MMIC includes a 3-stage LNA to provide gain amplification and a gate-pumped image-reject mixer for frequency translation. The overall receiver performs Single Side Band down-conversion in the
- Applications: Mobile / Wireless Systems, Satellite Communications (SATCOM), Terrestrial RF/Microwave Systems
- Features: RoHS, Frequency Range Switch
- Form Factor / Package: Surface Mount Technology (SMT)
- Operating Frequency: 7 to 20 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: L3 Narda-MITEQ Win Source Part Number: 861912-LNAS-43-05001 000-23-18P-GW Series: * Features: RF Amplifier IC Package: Box Family Name: LNAS-43 Categories: RF/IF and RFID Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity
- Applications: Terrestrial RF/Microwave Systems
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Supplier: Networks International Corporation
Description: Type: Bandpass Center Frequency: 0.000-0.000 (MHz) Mount: SMA NIC manufactures custom integrated product assemblies ranging from diplexers and multiplexers, switched filter banks, phase shifters, BPF-Duplexer/LNA Assemblies and TX/RX Assemblies.
- Filter Type: Bandpass
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Supplier: Networks International Corporation
Description: Type: Bandpass Center Frequency: 1775.000 (MHz) Bandwidth: (MHz) Mount: SMA Length: 2.800 (in) Width: 0.850 (in) Height: 1.100 (in) NIC's BPF + LNA assemblies are designed for a variety of applications and integrates a cavity filter and low noise amplifier into a single compact module for
- Filter Type: Bandpass
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Supplier: Richardson RFPD
Description: The HMC8325 is an integrated E-band gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) chip that operates from 71 GHz to 86 GHz. The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB, 22 dBm of OIP3, and 17 dBm of PSAT while
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 71000 to 86000 MHz
- Maximum Gain: 21 dB
- Noise Figure: 3.6 dB
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Supplier: Richardson RFPD
Description: The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 2000 to 30000 MHz
- Maximum Gain: 13.5 dB
- Maximum Operating Voltage: 7 volts
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Supplier: Richardson RFPD
Description: .75 GHz band. The MAAM12000-A1 is fully monolithic, requires no external components and is provided in a low-cost, user-friendly, microwave package. The MAAM12000-A1 is ideally suited to receivers in GPS and DGPS applications and operates over both the L1 and L2 frequency bands. Because of
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 1200 to 1750 MHz
- Maximum Gain: 26 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: The HMC1049SCPZ-EP is a Gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA) that operates between 0.3 GHz and 20 GHz. This LNA provides 14 dB of small signal gain, 2 dB noise figure, and an IP3 output of 23 dBm, yet requires only 70
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 300 to 20000 MHz
- Maximum Gain: 14 dB
- Maximum Operating Voltage: 7 volts
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 4000 to 6000 MHz
- Maximum Gain: 13.7 dB
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 2300 to 2690 MHz
- Maximum Gain: 12.5 dB
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 3400 to 3800 MHz
- Maximum Gain: 18 dB
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Supplier: Broadcom Inc.
Description: Avago Technologies AMMP-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC has
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 7000 to 21000 MHz
- MMIC Technology Required: Yes
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Supplier: Broadcom Inc.
Description: The Avago AMMP-6232 is an easy-to-use broadband, high gain, high linearity, Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter driver. The MMIC has four gain stages
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 18000 to 32000 MHz
- MMIC Technology Required: Yes
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Supplier: APITech
Description: API Technologies offers customizable and rugged low noise amplifier solutions for High-Rel, Defense and Space bound LNA applications. API also does not charge any NRE when slight modifications to it’s LNAs are requested to optimize for gain, power, noise, or DC supply. Click Here to
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Supplier: APITech
Description: API Technologies offers customizable and rugged low noise amplifier solutions for High-Rel, Defense and Space bound LNA applications. API also does not charge any NRE when slight modifications to it’s LNAs are requested to optimize for gain, power, noise, or DC supply. Click Here to
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Supplier: MACOM
Description: At MACOM we offer a complete line of RF and microwave limiters, LNA/limiters and limiting amplifiers up to 18 GHz. These products use the latest thin-film hybrid manufacturing techniques to obtain the highest levels of performance, repeatability, reliability and cost-effectiveness.
- Amplifier Type: Limiting Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 20 to 18000 MHz
- Output Power( P1dB): 36.02 to 60 dBm
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Supplier: Win Source Electronics
Description: Manufacturer: Analog Devices Inc. Win Source Part Number: 1181536-HMC-C001 Frequency: 2GHz ~ 20GHz Gain: 13dB Supply Current: 78mA Noise Figure: 4dB P1dB: 11.5dBm RF Type: LNA, VSAT Categories: RF/IF and RFID Manufacturer Homepage: www
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 2000 to 20000 MHz
- Maximum Gain: 13 dB
- Minimum Gain: 13 dB
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 736920-AN26011A-NL Packaging: Reel Test Frequency: 450MHz Frequency: 400MHz ~ 900MHz Gain: 16dB Supply Current: 11.5mA Noise Figure: 1.4dB P1dB: -7dBm RF Type: LNA, WLAN, WLL Categories
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 400 to 900 MHz
- Maximum Gain: 16 dB
- Minimum Gain: 16 dB
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 1221859-MGA-53589-BL KG Packaging: Cut Tape (CT) Test Frequency: 1.9GHz Frequency: 50MHz ~ 3GHz Gain: 15.8dB Supply Current: 400mA Noise Figure: 1.66dB P1dB: 18.2dBm RF Type: LNA, WLAN, WLL
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 50 to 3000 MHz
- Maximum Gain: 15.8 dB
- Minimum Gain: 15.8 dB
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Supplier: MACOM
Description: MACOM's receivers are widely used in point-to-point radio, aerospace and defense, and other broadband communications applications. Operating between the 4.5 - 45 GHz frequency range, our receivers feature an integrated LNA, mixer and LO buffer amplifier onto a single chip. Available in
- Applications: Terrestrial RF/Microwave Systems
- Features: RoHS
- Form Factor / Package: Flat Pack (FPAK)
- Operating Frequency: 1500 to 46000 MHz
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Supplier: Fairview Microwave Inc.
Description: RF low noise amplifier FMAM1055 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency LNA amplifiers specifically stocked to be highly available for rapid shipment. Fairview RF low noise amplifier (LNA) is a connectorized medium power version
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 0.0100 to 1400 MHz
- Maximum Gain: 42 dB
- Maximum Operating Voltage: 16 volts
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Supplier: Fairview Microwave Inc.
Description: RF low noise amplifier FMAM1077 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency LNA amplifiers specifically stocked to be highly available for rapid shipment. Fairview RF low noise amplifier (LNA) is a connectorized medium power version
- Component Type: Waveguide Amplifiers
- Operating Frequency Range: 27 to 40 GHz
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Supplier: Custom MMIC
Description: The CMD219 is a broadband GaN MMIC low noise amplifier ideally suited for microwave radios and C band applications where small size and high input power survivability are critical design requirements. The broadband device delivers greater than 23 dB of gain with a corresponding output 1 d
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 4000 to 8000 MHz
- MMIC Technology Required: Yes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65452-92LF is being discontinued and is not recommended for new designs. The SKY65452-92LF is a Microwave Monolithic Integrated Circuit (MMIC) front-end low-noise amplifier (LNA) designed especially for set-top box applications. The device provides high linearity
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 40 to 1000 MHz
- Maximum Gain: 15 dB
- Minimum Gain: 15 dB
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Supplier: Custom MMIC
Description: build IMAs on the Prototype Plate, in standard X-MWblock Housings or in Custom Housings. Features LNA Amplifier Frequency Range: 5 GHz to 9 GHz Gain: 22 dB P1dB: 11 dBm Applications Microwave Radio Military
- Category: Other
- Function: Break Out Board
- Supported System: RF
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Supplier: Qorvo
Description: Qorvo's CMD233 is a wideband RF / Microwave GaAs MMIC distributed low noise amplifier ideally suited for military, space, and communications systems where small size and low noise figure are needed over a wide bandwidth. At 10 GHz the device delivers greater than 9 dB of gain with a
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Microchip Technology, Inc.
Description: figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 ?. This product is also
- Package Type: Other
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Featured Products Top
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AMM-9852PSM - Marki Microwave’s new AMM-9852PSM offers industry-leading LNA performance from DC to 20 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 17dB gain and +33dBm OIP3 with a low 1.8 dB typical noise figure, the AMM-9852PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
AMM-9858PSM - Marki Microwave’s new AMM-9858PSM offers industry-leading LNA performance from 2 to 20 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 17dB gain and +30dBm OIP3 with a low 1.9 dB typical noise figure, the AMM-9858PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
AMM-9854PSM - Marki Microwave’s new AMM-9852PSM offers industry-leading LNA performance from DC to 30 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 14dB gain and +25dBm OIP3 with a low 2.5 dB typical noise figure, the AMM-9854PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
AMM-9860PSM - Marki Microwave’s new AMM-9860PSM offers industry-leading LNA performance from 3 to 30 GHz in a compact 3mm QFN offering exceptionally flat response across its entire operating bandwidth. Capable of providing 13.5dB gain and +28dBm OIP3 with a low 2.7 dB typical noise figure, the AMM-9860PSM is an ideal linear signal amplifier for applications requiring low power consumption and small form-factors. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
a line of Bias Tees offering ultra-broadband control solutions with coverage of multiple microwave bands, from 0.5 to 40 GHz. KRYTAR Bias Tees are the ideal choice for powering remote control of pre-amplifiers or low (read more)
Browse RF Power Detectors Datasheets for KRYTAR, Inc. -
characterization applications. The advanced development of this software has made it a must-have part of any modern test and measurement lab. For a growing community of RF and Microwave engineers and designers, Maury's ATS software has truly become the brain behind their device characterization operations (read more)
Browse Calibration Instruments Datasheets for Maury Microwave
Conduct Research Top
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
or nuclear electromagnetic pulse. Especially, low noise amplifiers (LNAs) in the front-end of microwave systems need high power protection because these amplifiers can sustain only low input power levels in the range of 10-20 dBm continuous wave (CW). To protect these circuits and maintain low
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Small Signal Amplifier Design: A Collection from Applied Microwave & Wireless
Small Signal Amplifier Design: A Collection from Applied Microwave & Wireless. With contributions from leading RF design experts, these articles discuss RF amplifier design, LNA design, distortion prediction and reduction, computer simulation and device modeling.
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Looking Into Noise-Figure Measurement Uncertainty
Microwave modeling software has enabled extremely low noise-figure (NF) amplifiers to become commonplace. There was a time when low-noise amplifiers (LNAs) below 0.7 dB were found only on specialized, expensive systems such as MRI machines or highly sensitive scientific radiometers. However, within
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https://www.duo.uio.no/bitstream/handle/10852/8733/Knutsen.pdf?sequence=4
CMOS Microwave LNA design .
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http://dspace.mit.edu/bitstream/handle/1721.1/8117/51547155-MIT.pdf?sequence=2
… as the noise figure expression from which it is derived (restricted, most notably, to frequencies above fp), Equation 4.12 does convey the often-overlooked significance of the role played by transistor junction capacitances in the performance of RF/ microwave LNAs .
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Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model
OBJECT AND EXPERIMENTAL The object of the studies was the test monolithic single stage microwave LNA with a working fre quency range of 1–3 [3].
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The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits
MICROWAVE LNA AND BBA ICS .
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Microwave Phase Detection at the Level of $10^{-11}$ rad
… the LNA overcomes the relatively high technical fluctuations in the DBM making the effective noise temperature of the readout system TRS close to its physical temperature TRS ≈ T0 + Tamp, where Tamp is the effective noise temperature of the microwave LNA .
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A 23.5 GHz Double Stage Low Noise Amplifier Using .13μm CMOS Process with an Innovative Inter-Stage Matching Technique
Presently, most of the millimeter wave and microwave LNAs are designed in expensive processes like SOI, SiGe, or MMIC because high frequency application of standard CMOS process is restricted for various reasons.
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Extending the bandwidth of low-noise microwave amplifier through digital assist
Conclusion: We have demonstrated a DA method to flatten the gain of a microwave LNA and thereby extend its 3 dB bandwidth by 23% without degrading the LNA’s input return loss or its NF.
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Book of abstracts
Study of Dependence of HEMT Noise Parameters on Gate Periphery in Microwave LNA Design .
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EuMIC 2012 abstract cards
Study of Dependence of HEMT Noise Parameters on Gate Periphery in Microwave LNA Design .
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EuMIC 2012 detailed author index
C Study of Dependence of HEMT Noise Parameters on Gate Periphery in Microwave LNA .