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Supplier: Accuris
Description: Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors
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Supplier: ASTM International
Description: This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers the measurement of generation lifetime and generation velocity of silicon wafers. 1.2 The measurement requires the fabrication of a guard-ring MOS (Metal-Oxide-Silicon) capacitor. This test method
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Supplier: Richardson RFPD
Description: These devices exhibit higher capacitance per unit area (resulting in smaller chip size) and improved ruggedness over similar MOS, MIS and ceramic capacitors. Evaporated gold contacts are used to provide an easily bondable metal pad on the capacitor chip. MACOM MNS
- Capacitance Range: 0.00015000000000000001 microF
- DC Rated Voltage Range (WVDC): 50 volts
- Features: Other
- Configuration / Form Factor: Surface Mount / Chip Capacitor
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Supplier: Richardson RFPD
Description: Features High speed H-Bridge High efficiency MOS Enhanced body diode Integrated capacitors Thermistor Target Applications Power Supply Solar UPS Welding
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: improved internal oscillator and additional direct bulk capacitor over-voltage protection. Summary of Features Ease of Use with Few External Components Supports Wide Range Average Current Control External Current and Voltage Loop Compensation for Greater User Flexibility Programmable
- Quiescent Current (IQ): 0.0003 amps
- Operating Temperature: -40 to 125 C
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET. The switch realizes 50mO(Typ.) ON resistance. The switch turns on smoothly by the built-in charge pump, therefore, it is possible to reduce inrush current at switch on. And soft
- Supply Voltage (VS): 3 to 5.5 volts
- Max Ron: 0.05 ohms
- Min Operating Current: 0.11 mA
- tON: 1,000,000 ns
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Supplier: Infineon Technologies AG
Description: Voltage (0.6 V +/- 0.5%) Enhenced Fast COT engine stable with Ceramic Output Capacitors and No External Compensation Optional Forced Continuous Conduction Mode and Diode Emulation for Enhanced Light Load Efficiency Programmable Switching Frequency from 600 kHz to 2 MHz Monotonic Start-Up with
- Regulated Output Voltage (Volt): 0.6 to 6 volts
- Output Current (IOUT): 25 amps
- Output Voltage Type: Adjustable
- Features: Other
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Supplier: Infineon Technologies AG
Description: constant-on-time engine for easy design, enhanced transients and less capacitors OptiMOS™ 5 for very high efficiency and advanced package for excellent thermal behavior Comprehensive protection features including Soft Start, PGood, OVP, UVP, OCP and OTP Potential Applications Server
- Category: Development Board
- Features: Other
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Supplier: Littelfuse, Inc.
Description: configurations for PWM applications with switching frequencies upwards of 50kHz. Common applications include AC motor speed control, DC servo, robot drives, DC choppers, UPS, capacitor discharge circuits, pulser circuits, switch-mode and resonant-mode power supplies. International standard
- VCES: 1,600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: configurations for PWM applications with switching frequencies upwards of 50kHz. Common applications include AC motor speed control, DC servo, robot drives, DC choppers, UPS, capacitor discharge circuits, pulser circuits, switch-mode and resonant-mode power supplies. International standard
- VCES: 1,700 volts
- VCE(on): 3.5 volts
- IC(max): 38 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: configurations for PWM applications with switching frequencies upwards of 50kHz. Common applications include AC motor speed control, DC servo, robot drives, DC choppers, UPS, capacitor discharge circuits, pulser circuits, switch-mode and resonant-mode power supplies. International standard
- VCES: 1,700 volts
- VCE(on): 6 volts
- IC(max): 24 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: configurations for PWM applications with switching frequencies upwards of 50kHz. Common applications include AC motor speed control, DC servo, robot drives, DC choppers, UPS, capacitor discharge circuits, pulser circuits, switch-mode and resonant-mode power supplies. International standard
- VCES: 1,700 volts
- VCE(on): 6 volts
- IC(max): 24 amps
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: TDM22544D OptiMOS™ dual-phase power module 140 A is available on demand only. For complete data sheets, additional information and evaluation boards please contact us here. Summary of Features Integrated 5.3uF input capacitors Integrated decoupling capacitors Integrated bootstrap
- DC Input Voltage: 4.25 to 16 volts
- DC Output Voltage: 0.225 to 3 volts
- DC Output Current: 160 amps
- Type: DC/DC Converter
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Supplier: Richardson RFPD
Description: 30% savings can be achieved on the cost of the heat sink, magnetic components and bulk capacitors in applications with 100+ kHz switching frequencies. It also runs very efficiently at light loads to markedly increase SMPS's overall efficiency. Main Features High frequency 900 V SiC MOS
- Features: MOSFET, Other
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Supplier: Renesas Electronics Corporation
Description: RC oscillator, voltage level translator, and four output power MOS switches. The oscillator, when unloaded, oscillates at a nominal frequency of 10kHz for an input supply voltage of 5.0V. This frequency can be lowered by the addition of an external capacitor to the “OSC” terminal, or
- Output Voltage (Volt): 1.5 to 22.8 volts
- Input Voltage (VIN): 1.5 to 12 volts
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Broadcom Inc.
Description: drive to ground. External access to the second stage base provides the capability for better noise rejection than a conventional photodarlington detector. An external resistor or capacitor at the base can be added to make a gain-bandwidth or input current threshold adjustment. The base lead
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 20 volts
- Operating Temperature: 0 to 70 C
- Input: DC
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Supplier: Renesas Electronics Corporation
Description: voltages of -1.5V to -10.0V and the ICL7660A does the same conversions with an input range of +1.5V to +12.0V resulting in complementary output voltages of -1.5V to -12.0V. Only 2 noncritical external capacitors are needed for the charge pump and charge reservoir functions. The ICL7660 and
- Output Voltage (Volt): 1.5 to 22.8 volts
- Input Voltage (VIN): 1.5 to 10 volts
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Richardson RFPD
Description: The AD676 is a multipurpose 16-bit parallel output analog-to-digital converter which utilizes a switched-capacitor/charge redistribution architecture to achieve a 100 kSPS conversion rate (10 µs total conversion time). Overall performance is optimized by digitally correcting internal
- Resolution: 16 bits
- Sample Rate: 100 kSamples/Sec
- Package Type: DIP
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: electromagnetic emissions Chopper frequency programmable via a single capacitor or external clock Current control allows cool motor and driver operation Internal open load detector 7V to 34V motor supply voltage More than 6000mA using 8 external MOS transistors External drivers can be
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: motor operation Slope control user programmable to reduce electromagnetic emissions Chopper frequency programmable via a single capacitor or external clock Current control allows cool motor and driver operation Internal open load detector 7V to 34V motor supply voltage More than 6000mA using
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Supplier: ASTM International
Description: the recombination lifetime can also be deduced from capacitance-time measurements made at temperatures above room temperature ([>=]70°C) using the same MOS capacitor structure (2). 1.5 Interpretation of measurements to identify the cause or nature of impurity centers is beyond the
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Supplier: ASTM International
Description: metal-oxide semiconductor (MOS-capacitors) (fabricated or mercury probe), various isolation structures (for example, local oxidation of silicon (LOCOS)), and field effect transistors. This test method assumes that a low resistance ohmic contact is made to the backside of each wafer in
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Compact MOSFET Models for VLSI Design
… 4 SPICE Model Parameters for a p–n Junction Diode 1.12 Tunneling Through Potential Barrier References 2 Ideal Metal Oxide Semiconductor Capacitor 2.1 Physical Structure and Energy Band Diagram 2.2 Modes of Operation of MOS Capacitors 2.2.1 Volume …
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Semiconductor Material and Device Characterization 3rd Edition Complete Document
… Current (EBIC), 416 Recombination Lifetime — Electrical Measurements, 417 7.5.1 Diode Current-Voltage, 417 7.5.2 Reverse Recovery (RR), 420 7.5.3 Open-Circuit Voltage Decay (OCVD), 422 7.5.4 Pulsed MOS Capacitor , 424 7.5.5 …
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http://dspace.mit.edu/bitstream/handle/1721.1/58686/46852497-MIT.pdf?sequence=2
Hysteresis and Memory Effects in Nanocrystal Embedded MOS Capacitors .
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http://etd.auburn.edu/bitstream/handle/10415/1494/Zhu_Xingguang_7.pdf?sequence=1
2.2 MOS Capacitor ………………………………………………………...…....
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Electrical Design of Through Silicon Via
However, it is difficult for these EM simulators to estimate the impedance of the PDNs in TSV- based 3D ICs because of their high aspect ratio and embedded MOS capacitors [12].
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Power Distribution Networks with On-Chip Decoupling Capacitors
5.4.2 MOS capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . .
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
9 The MOS Capacitor .
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http://repositories.lib.utexas.edu/bitstream/handle/2152/17914/kimh14697.pdf?sequence=2
In this research, HfO2-based MOS capacitors and metal-oxide- .
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http://etd.auburn.edu/bitstream/handle/10415/1858/dissertation.pdf?sequence=1
4.12 A typical CV plot of MOS capacitor . . . . . . . . . . . . . . . . . . . . . .
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http://research-repository.st-andrews.ac.uk/bitstream/10023/2532/3/FengqiaoDongMPhilThesis.pdf
The phase shifter is in one arm of an asymmetric Mach-Zehnder interferometer (MZI) structure and operates very similar to a MOS capacitor .
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