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Supplier: Microchip Technology, Inc.
Description: The TC1240 is a doubling CMOS charge-pump voltage converter in a small 6-Pin SOT-23A package. TC1240 doubles an input voltage which can range from +2.5V to +4.0V. Conversion efficiency is typically >99%. Internal oscillator frequency is 160kHz for the TC1240. The TC1240 has an active high
- Configuration / Function: Charge Pump
- IC Package Type: Other
- Operating Temperature: -45 to 85 C
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Supplier: Microchip Technology, Inc.
Description: The TC1240A is a doubling CMOS charge-pump voltage converter in a small 6-Pin SOT-23A package. TC1240A doubles an input voltage which can range from +2.5V to +5.5V. Conversion efficiency is typically >99%. Internal oscillator frequency is 160kHz for the TC1240A. The TC1240A has an active high
- Configuration / Function: Charge Pump
- IC Package Type: Other
- Operating Temperature: -45 to 85 C
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Supplier: Accuris
Description: STANDARD TEST METHOD FOR DETERMINING THE MEAN INTERFACE TRAP DENSITY MOSFETS BY CHARGE- PUMPING
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Supplier: Littelfuse, Inc.
Description: Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump
- Transistor Type: IGBT
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Supplier: ASTM International
Description: Test Method for Determining the Mean Interface Trap Density of Mosfets by Charge-Pumping (Withdrawn 1997)
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Supplier: Littelfuse, Inc.
Description: The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: The IX4352NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias
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Supplier: Renesas Electronics Corporation
Description: freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. Since it can switch at frequencies up to 1MHz, the HIP4080A is well suited for driving Voice Coil Motors, switching power amplifiers and power supplies.brbr HIP4080A can also drive medium
- IC Package Type: SOIC / SOP, Other
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Supplier: Renesas Electronics Corporation
Description: freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. Since it can switch at frequencies up to 1MHz, the HIP4080A is well suited for driving Voice Coil Motors, switching power amplifiers and power supplies.brbr HIP4080A can also drive medium
- IC Package Type: SOIC / SOP, Other
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Supplier: Microchip Technology, Inc.
Description: 150µA typical supply current at 5V supply =1µA typical standby (off) current Charge pump for high-side low-voltage applications Internal zener diode gate-to-ground MOSFET protection Operates in low- and high-side configurations TTL compatible input ESD protected
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: nominal supply decoupling to implement either a high- or low-side switch. The MIC5011 charges a 1nF load in 60µs typical with no external components. Faster switching is achieved by adding two 1nF charge pump capacitors. Operation down to 4.75V allows the MIC5011 to drive
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Potential Applications General automotive applications. Applications Automotive electric pumps and fans 12 V EV charging
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: -55 to 175 C
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Supplier: Rochester Electronics
Description: LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: micro inverter and fast switching DC-DC converter. Summary of Features Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Ideal for fast switching applications RoHS compliant - halogen free MSL
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: -55 to 150 C
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Supplier: Infineon Technologies AG
Description: protection Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 30V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: -55 to 175 C
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Supplier: Infineon Technologies AG
Description: No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability Lowest switching and conduction power losses for highest thermal efficiency Robust packages with superior quality and
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: -55 to 175 C
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Supplier: Richardson RFPD
Description: optimized for easy PCB routing High power density for compact designs and fast charging Topology Features Current Synthesizing PFC + Booster Integrated DC Link capacitors Kelvin Emitter for improved switching performance Temperature
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Allegro MicroSystems Inc.
Description: The A4957 provides robust and efficient control of high-power inductive loads, with an integrated charge pump, bootstrap charge management, and diagnostic features for enhanced reliability. * Note: If you have issues logging into this feature you may need to enable 3rd party
- Configuration: IC / PCB-Mounted
- Drive Type: DC Brushed Motor
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Supplier: Allegro MicroSystems Inc.
Description: The A3946 simplifies high-power motor control designs with its integrated charge pump, 100% duty cycle capability, and robust protection features. It's suitable for a variety of inductive loads, including unidirectional DC and 3-phase BLDC motors. * Note: If you have issues logging
- Configuration: IC / PCB-Mounted
- Drive Type: DC Brushless Motor
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Supplier: Renesas Electronics Corporation
Description: single point of failure while a diode short might pose a hazard to technical personnel servicing the system while unaware of this failure.brbr The ISL6144 can be used in 9V to 75V systems having similar power sources and has an internal charge pump to provide a floating gate drive for
- IC Package Type: SSOP, Other
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Supplier: Renesas Electronics Corporation
Description: single point of failure while a diode short might pose a hazard to technical personnel servicing the system while unaware of this failure.brbr The ISL6144 can be used in 9V to 75V systems having similar power sources and has an internal charge pump to provide a floating gate drive for
- IC Package Type: SSOP, Other
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Supplier: ROHM Semiconductor GmbH
Description: The BD99950MUV is a high-efficiency, synchronous Narrow VDC system voltage regulator and battery charger controller. It has two charge pumps which separately drive N-channel MOSFETs for automatic system power source selection. Charge voltage, charge current, AC
- IC Package Type: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: The BD99950MUV is a high-efficiency, synchronous Narrow VDC system voltage regulator and battery charger controller. It has two charge pumps which separately drive N-channel MOSFETs for automatic system power source selection. Charge voltage, charge current, AC
- IC Package Type: Other
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Supplier: ROHM Semiconductor GmbH
Description: The BD2270HFV is N-ch MOSFET Driver IC for Load Switch Applications Charge pump driver circuit, Discharge circuit, Analog control input circuit are build-in. It’s realized high performance load switch circuit ,using N-ch MOSFETs Analog control input circuit is realized
- Device Type / Applications: Other
- IC Package Type: Other
- RoHS Compliant: Yes
- Supply Voltage: 2.7 V, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: This is the product guarantees long time support in Industrial market. The BD2270HFV is N-ch MOSFET Driver IC for Load Switch Applications Charge pump driver circuit,Discharge circuit,Analog control input circuitare build-in. It’s realized high performance load switch circuit
- Device Type / Applications: Other
- IC Package Type: Other
- RoHS Compliant: Yes
- Supply Voltage: 2.7 V, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: D8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and 1 step-up Di rectification channel for LED application. Using a charge-pump system for high side FET driver and including power MOSFET reduce the number of peripheral
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Regulator Category: Switching Regulator
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Supplier: Data Device Corporation (DDC)
Description: Controls the High and Low-side Gate Drivers for each Phase and Operate from +5 to +15 V Logic Levels Constant Output Performance for Switching Frequencies from DC to 50 kHz Provided by the Internal Charge Pump Circuitry Applications Pump Control
- AC Input Phase: Three Phase
- Application Categories: PWM Drive
- Configuration: IC / PCB-Mounted
- Continuous Output Current: 5 amps
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Relays DC SSRs operate with one-way current loads and designers create them to switch with MOSFETs or IGBTs. Their main strength lies in their extremely low resistance, fast action and high thermal efficiency. People usually find DC SSRs in battery systems, solar PV applications, charging (read more)
Browse Solid State Relays Datasheets for ODG (Origin Data Global) -
-out performance with NPNs, they usually need a base voltage higher than the output voltage. NMOS devices also require a gate voltage above the input supply. In some cases, this may need a second bias supply or an internal charge pump. It samples a small part of the output voltage using a resistor (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
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The Evolution of Switched Capacitor Backlight Drivers in Mobile Phones
of drivers used for LED backlighting: inductive boost converters or charge pumps. To ensure equal brightness of each LED, designers either put all LEDs in series and drive them with a constant current boost converter, or use a switched capacitor charge pump with individual current control for each
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The Report committee for Sarat Reddy Anumula
Certifies that this is the approved version of the following report
Fully integrated CMOS Charge Pump Design
A desired output (Vout = 2V ) is acheived with metal capacitors but not with the integrated MOSFETs charge pump driving a load.
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Dead zone free area efficient Charge Pump Phase Frequency Detector in nanoscale DG-MOSFET
The faster rise time of DG- MOSFET charge pump PFD, due to lower parasitics allows successful application for tiny phase error detections to avoid dead zones in PLLs, something not possible in conventional CMOS without resorting to additional delay networks.
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Interface defect formation in MOSFETs by atomic hydrogen exposure
Changes in the MOSFET charge pumping current, ILP,for the same dose range is shown in Fig. 4.
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Subject Index
Tanzawa, T., + , J-SC Oct 00 1415-1421 MOSFET charge pump without degrad. in threshold voltage due to body effect, memories.
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Subject index
MOSFET charge pumping meas., tunneling current.
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Hot electron reliability and ESD latent damage
Fig. 1 Configurationof MOSFET charge pumping measure- ment.
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Practical considerations in the design of lithium-ion battery protection systems
B. System Clock Generator The system clock generator is used to sequence the tum- on and turn-off of the battery sampling circuits, as well as provide the clock for the MOSFET charge pump .
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CMOS foundry Schottky diode microwave power detector fabrication, Spice modeling, and application
Diode connected MOSFET charge pump .
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Understanding the NBTI degradation in halo-doped channel p-MOSFETs
As can be seen, with an increase in the tilt angle, the MOSFET charge pumping current increases.
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Geometric components of charge pumping current in SOS devices
There are N- and P-channel charge pumping MOSFETs whose layout is shown in Fig. I(a).