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Supplier: Microchip Technology, Inc.
Description: The TC1240 is a doubling CMOS charge-pump voltage converter in a small 6-Pin SOT-23A package. TC1240 doubles an input voltage which can range from +2.5V to +4.0V. Conversion efficiency is typically >99%. Internal oscillator frequency is 160kHz for the TC1240. The TC1240 has an active
- Operating Temperature: -45 to 85 C
- Configuration / Function: Charge Pump
- Features: Other
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Supplier: Accuris
Description: STANDARD TEST METHOD FOR DETERMINING THE MEAN INTERFACE TRAP DENSITY MOSFETS BY CHARGE- PUMPING
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Supplier: ASTM International
Description: Test Method for Determining the Mean Interface Trap Density of Mosfets by Charge-Pumping (Withdrawn 1997)
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Supplier: Littelfuse, Inc.
Description: Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump
- Features: IGBT
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Supplier: Renesas Electronics Corporation
Description: freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. Since it can switch at frequencies up to 1MHz, the HIP4080A is well suited for driving Voice Coil Motors, switching power amplifiers and power supplies.brbr HIP4080A can also drive medium
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Rochester Electronics
Description: LTC1156 - Quad High Side Micropower MOSFET Driver with Internal Charge Pump
- Features: MOSFET, Other, Power MOSFET
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Microchip Technology, Inc.
Description: features extremely low off-state supply current. An internal charge pump drives the gate output higher than the driver supply voltage and can sustain the gate voltage indefinitely. An internal zener diode limits the gate-to-source voltage to a safe level for standard N-channel
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: control MOSFETs that switch loads of up to 30V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET. The MIC5060 has a non-inverting, TTL-compatible control input. The MIC5060 features an internal charge pump that
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: Summary of Features OptiMOS™ power MOSFET N-channel MOSFET Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL3 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested
- VGS(off): 2.6 volts
- rDS(on): 0.0008 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Microchip Technology, Inc.
Description: decoupling to implement either a high- or low-side switch. The MIC5011 charges a 1nF load in 60µs typical with no external components. Faster switching is achieved by adding two 1nF charge pump capacitors. Operation down to 4.75V allows the MIC5011 to drive standard
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: switch IPB048N15N5 | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET BTS3046SDL | Classic HITFET™ 24V |automotive smart low-side switch IPB048N15N5 | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs BSC070N10NS5 | N-Channel Power
- rDS(on): 0.01 ohms
- TJ: -55 to 150 C
- VGS(off): 1.2 to 2.2 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: The IAUA180N10S5N029 is a 2.9mR 100V MOSFET in an sTOLL high power leadless 7x8mm2 package, using Infineon’s leading OptiMOS™5 technology. Next to others it is used in 48V Auxiliaries like HVAC Compressors, Pumps, Fans and Safety Switches. Summary of Features • OptiMOSTM 5 – power
- VGS(off): 2.2 to 3.8 volts
- rDS(on): 0.0029 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Infineon Technologies AG
Description: Summary of Features AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Benefits No charge pump required for high side drive. Simple interface drive circuit World's lowest RDSon at 40V Highest current capability
- VGS(off): -4 to -2 volts
- rDS(on): 0.0028 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Allegro MicroSystems Inc.
Description: The A4957 provides robust and efficient control of high-power inductive loads, with an integrated charge pump, bootstrap charge management, and diagnostic features for enhanced reliability. * Note: If you have issues logging into this feature you may need to enable 3rd party
- Motor / System: DC Brushed Motor
- Configuration: IC / PCB-Mounted
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Supplier: Richardson RFPD
Description: Topology Features Current Synthesizing PFC + Booster Integrated DC Link capacitors Kelvin Emitter for improved switching performance Temperature sensor Thin Al2O3 for easy thermal design Component Features High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET
- Features: MOSFET, Other
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Supplier: Allegro MicroSystems Inc.
Description: The A3946 simplifies high-power motor control designs with its integrated charge pump, 100% duty cycle capability, and robust protection features. It's suitable for a variety of inductive loads, including unidirectional DC and 3-phase BLDC motors. * Note: If you have issues logging
- Motor / System: DC Brushless Motor
- Configuration: IC / PCB-Mounted
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Supplier: Renesas Electronics Corporation
Description: The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET(s) increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.brbr In a multiple supply, fault tolerant, redundant power distribution system,
- Features: Other
- Package Type: SSOP
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Supplier: Renesas Electronics Corporation
Description: the built-in charge pumps disabled. This is useful in applications that require very quiet EMI performance (the charge pumps operate at 10MHz). The advantage of the HIP4086 is that the built-in charge pumps allow indefinitely long on times for the high-side
- Features: Other
- Package Type: SOIC / SOP
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Supplier: ROHM Semiconductor USA, LLC
Description: The BD2270HFV is N-ch MOSFET Driver IC for Load Switch Applications Charge pump driver circuit,Discharge circuit,Analog control input circuitare build-in. It’s realized high performance load switch circuit ,using N-ch MOSFETsAnalog control input circuit is realized power up
- TJ: -25 to 85 C
- Supply Voltage: 2.7 V
- Features: Other, RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: The BD2270HFV is N-ch MOSFET Driver IC for Load Switch Applications Charge pump driver circuit, Discharge circuit, Analog control input circuit are build-in. It’s realized high performance load switch circuit ,using N-ch MOSFETs Analog control input circuit is realized
- TJ: -25 to 85 C
- Supply Voltage: 2.7 V
- Features: Other, RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: The BD99950MUV is a high-efficiency, synchronous Narrow VDC system voltage regulator and battery charger controller. It has two charge pumps which separately drive N-channel MOSFETs for automatic system power source selection. Charge voltage, charge current, AC
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: The BD99950MUV is a high-efficiency, synchronous Narrow VDC system voltage regulator and battery charger controller. It has two charge pumps which separately drive N-channel MOSFETs for automatic system power source selection. Charge voltage, charge current, AC
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: D8355MWV is a system switching regulator for Li 2 cell composed of 6 step-down synchronous rectification channels and 1 step-up Di rectification channel for LED application. Using a charge-pump system for high side FET driver and including power MOSFET reduce the number of
- Operating Temperature: -25 to 85 C
- Input Voltage (VIN): 4 to 10 volts
- Switching Frequency (fsw): 1.8 kHz
- Features: Other, Switching Regulator
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Supplier: Renesas Electronics Corporation
Description: The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs.
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Quad High Side Micropower MOSFET Driver with Internal Charge Pump Product overview: LTC1156CN from Linear Technology is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is
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Supplier: Data Device Corporation (DDC)
Description: +15 V Logic Levels Constant Output Performance for Switching Frequencies from DC to 50 kHz Provided by the Internal Charge Pump Circuitry Applications Pump Control Electric Actuators Electric Valve Control Fuel Pumps Robotics Antenna/Camera Position Control Reaction
- Maximum Output Voltage: 100 volts
- Continuous Output Current: 5 amps
- Peak Output Current: 10 amps
- Operating Temperature: -55 to 125 C
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1350969-BTN9970LVAUMA1 Category: Integrated Circuits (ICs) - Power Management (PMIC) - Full Half-Bridge Drivers Series: NovalithIC™ Features: Charge Pump Package: Tape & Reel Applications: DC Motors, General Purpose Standard Package: 2,000 Technology:
- Supply Voltage: 8 to 18 volts
- Operating Temperature: -40 to 150 C
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1131890-DRV8935PRGER Category: Integrated Circuits (ICs)>PMIC - Full, Half-Bridge Drivers Features: Charge Pump Package: Tape & Reel Applications: DC Motors, General Purpose, Solenoids, Stepper Motors Standard Package: 3,000 Mounting: SMD (SMT) Technology: Power
- Supply Voltage (Vi): 4.5 to 33 volts
- Operating Temperature: -40 to 150 C
- Output Options: Inverting
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Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: Supports latest generation of Power MOSFETs Integrated supply concept: Step down switching regulator Common rail charge pump allows for 100% PWM duty cycle Firmware update via USB and RS232 interface Interface Communication to the PC via USB and RS232 interface Inputs for
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The Evolution of Switched Capacitor Backlight Drivers in Mobile Phones
of drivers used for LED backlighting: inductive boost converters or charge pumps. To ensure equal brightness of each LED, designers either put all LEDs in series and drive them with a constant current boost converter, or use a switched capacitor charge pump with individual current control for each
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The Report committee for Sarat Reddy Anumula
Certifies that this is the approved version of the following report
Fully integrated CMOS Charge Pump Design
A desired output (Vout = 2V ) is acheived with metal capacitors but not with the integrated MOSFETs charge pump driving a load.
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Dead zone free area efficient Charge Pump Phase Frequency Detector in nanoscale DG-MOSFET
The faster rise time of DG- MOSFET charge pump PFD, due to lower parasitics allows successful application for tiny phase error detections to avoid dead zones in PLLs, something not possible in conventional CMOS without resorting to additional delay networks.
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Interface defect formation in MOSFETs by atomic hydrogen exposure
Changes in the MOSFET charge pumping current, ILP,for the same dose range is shown in Fig. 4.
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Subject Index
Tanzawa, T., + , J-SC Oct 00 1415-1421 MOSFET charge pump without degrad. in threshold voltage due to body effect, memories.
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Subject index
MOSFET charge pumping meas., tunneling current.
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Hot electron reliability and ESD latent damage
Fig. 1 Configurationof MOSFET charge pumping measure- ment.
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Practical considerations in the design of lithium-ion battery protection systems
B. System Clock Generator The system clock generator is used to sequence the tum- on and turn-off of the battery sampling circuits, as well as provide the clock for the MOSFET charge pump .
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CMOS foundry Schottky diode microwave power detector fabrication, Spice modeling, and application
Diode connected MOSFET charge pump .
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Understanding the NBTI degradation in halo-doped channel p-MOSFETs
As can be seen, with an increase in the tilt angle, the MOSFET charge pumping current increases.
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Geometric components of charge pumping current in SOS devices
There are N- and P-channel charge pumping MOSFETs whose layout is shown in Fig. I(a).
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