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Supplier: Newark, An Avnet Company
Description: MOSFET MODULE, H BRIDGE 100V; Channel Type:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.3V; Power Dissipation:-; Product Range:- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: designed with IRF3205 | N-Channel Power MOSFET BSC060P03NS3E G | P-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET IPD50P04P4-13 | Automotive MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete
- rDS(on): 0.0725 ohms
- TJ: 150 C
- VGS(off): 3 to 5 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Solid State Devices, Inc.
Description: Features: Rugged poly-Si gate Lowest ON-resistance in the Industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching Improved (RDS(ON) QG) Figure of Merit Class H, K Screening Available Consult Factory for Special Requirements such as Builtin Zener
- V(BR)DSS: 1,000 volts
- rDS(on): 318 to 340 ohms
- IDSS: 7.5 to 12 milliamps
- QG: 95 to 149.99999999999997 nC
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Supplier: Infineon Technologies AG
Description: OptiMOS™ 6 dual N-channel 40 V MOSFETs in a scalable power block package Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex:
- rDS(on): 0.00088 ohms
- TJ: -55 to 175 C
- VGS(off): 1.8 to 2.8 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: PD70224 is a dual pack of MOSFET-based full-bridge rectifiers. It contains low-Rds 0.16Ω N-channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC007N04LS6 | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET 2EDS8265H | Gate
- rDS(on): 0.022 ohms
- QG: 149.99999999999997 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: Infineon Technologies AG
Description: | Automotive MOSFET TLE9350VSJ | Automotive CAN transceivers SAK-TC364DP-64F300F AA | AURIX™ Family – TC36xDP BSS138W | Small signal/small power MOSFET IPD14N06S2-80 | Automotive MOSFET TLE9350VSJ | Automotive CAN transceivers SAK-TC364DP-64F300F AA | AURIX™ Family – TC36xDP
- VGS(off): 2.1 to 4 volts
- rDS(on): 0.0037 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
- Features: MOSFET
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Supplier: DigiKey
Description: Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4
- Features: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1119534-IAUC60N04S6L030HATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101, OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge)
- TJ: -55 to 175 C
- Features: MOSFET
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 1200V SIC H-BRIDGE MODULE
- V(BR)DSS: 1,200 volts
- IDSS: 105,000 milliamps
- TJ: -40 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 044168-ZXMHC3F381N8TC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range -
- V(BR)DSS: 30 volts
- PD: 870 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 092014-ZXMHC6A07N8TC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range -
- V(BR)DSS: 60 volts
- PD: 870 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 036939-ZXMHC3A01N8TC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Family Name: ZXMHC3A01N8 Categories: Discrete Semiconductor Products Status:
- V(BR)DSS: 30 volts
- PD: 870 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: The circuit is an H-bridge composed of high power switching MOSFETs that are controlled by low voltage logic signals. The circuit provides a convenient interface between logic signals and the high power bridge. The bridge uses low cost N-channel power
- Category: Development Board
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STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
Dual High-Side/Low-Side Drive: Supports N-channel MOSFETs and IGBTs in complex bridge topologies with 11V–14V gate drive voltage (read more)
Browse Gate Drivers Datasheets for Win Source Electronics
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Arduino Robotics
This chip has built-in logic to control an all N - channel mosfet H - bridge at up to 1MHz PWM frequencies (that’s 1000kHz!).
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ZXMHC10A07T8TA Diodes Incorporated | Mouser
MOSFET 100V 1.4A N - Channel MOSFET H - Bridge .
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ZXMHC10A07T8TA Diodes Incorporated | Mouser
Description: MOSFET 100V 1.4A N - Channel MOSFET H - Bridge .
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Single-phase brushless motor DC pre-driver IC from Allegro MicroSystems
Key features include PWM current control, locked-rotar protection with auto restart, outputs to drive an all N - channel MOSFET H - bridge , a minimal requirement for external components, and programmable commutation delay, soft start and minimum speed.
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An one dimensional hybrid magnetic vibration actuator-design and implementation
A driver circuit for current polarity change is designed to meet this requirement, as shown in Fig. 9, using a medium frequency, medium voltage H - Bridge N - Channel MOSFET driver IC.
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Electronically Controlled Transfer Case:
Sensing, Control and Actuation
It consists of four n channel mosfets in an H - Bridge configuration and an H-bridge driver IC.
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Agilent: Five Hints for Debugging Microcontroller-Based Designs
Building an H - bridge out of N - channel MOSFETs requires level translation circuitry.
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http://dspace.mit.edu/bitstream/handle/1721.1/28384/56960765-MIT.pdf?sequence=2
The following analysis assumes an H - bridge with two N - channel MOSFETs , but is easily converted to apply for an output stage with transistors of opposite genders by inverting the bottom signal in the following figures.
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Design and analysis for high performance synchronized inverter with PWM power control
Fig. 1 represents H - Bridge Configuration using N – Channel MOSFETs inverter, There are four possible switch positions that can be used to obtain AC voltage across the load.
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A robust lateral power MOSFET buffered H-bridge motor driver power IC
Figure-5 illustrates the drain voltage and the source current of the non-isolated n - channel MOSFET used in the H - bridge driving an inductive load of IniH with 1R series resistance.