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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 400V, 0.1A, TSMT; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: Allied Electronics, Inc.
Description: Transistor, NPN, 1A, 250V, TO-39
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 60V 1A, TO-220
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 65V, 0.10A, SOT-23
- VCEO: 65 volts
- IC(max): 100 milliamps
- Features: General Purpose BJT, Other
- Polarity: NPN
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT25
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN/NPN matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. PNP/PNP complement: BCM857BS Matched version of: BC847BS Features and benefits Current gain matching Base-emitter
- Polarity: NPN
- Features: Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 80V, 1A/SOT223; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN/PNP, 50V, 0.1A; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes
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Transistors - NPN+NPN, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) -- IMH1ASupplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN/NPN general-purpose transistor with two independently operating transistors in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Double general-purpose transistor Board-space reduction Very small SMD plastic
- VCEO: 40 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
- TJ: 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 80V, 1A, SOT1061; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BCM53DS Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Current gain matching 5%
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT25
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Supplier: Utmel Electronic Limited
Description: RF TRANSISTOR NPN SOT-523
- Number of Transistors in the Chip: 1
- TJ: 150 C
- Power Gain: 11 dB
- Output Power: 0.125 watts
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- IC(max): 35 milliamps
- VCEO: 10 volts
- Power Gain: 9.5 dB
- Noise Figure: 1.8 dB
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
- VCEO: 180 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: 150 C
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR NPN 80V 1A SOT1061
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN, PNP
- Features: Other
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Supplier: Micross Components, Inc.
Description: Micross Continues to Build Inventory on the Industry's Most Popular Parts Part Number - Manufacturer - Description - Availability - Request Quote 1N3595 Fairchild/Onsemi High Conductance Fast Diode Available
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 1A, Bipolar Transistor, Bipolar RF Transistors. This listing
- IC(max): 1,000 milliamps
- VCEO: 50 volts
- PD: 19,000 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 1A, Bipolar Transistor, Single Bipolar
- IC(max): 1,000 milliamps
- VCEO: 400 volts
- VCBO: 700 volts
- PD: 1,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar
- IC(max): 800 milliamps
- VCEO: 80 volts
- VCBO: 90 volts
- PD: 1,000 milliwatts
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM TYPE 2N78A
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N1506A
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors.
- IC(max): 100 milliamps
- PD: 150 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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