-
Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
-
Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 500V 1A, TO-220
-
Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 60V 1A, TO-220
-
-
Supplier: Allied Electronics, Inc.
Description: Transistor, NPN, 1A, 250V, TO-39
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 400V, 0.1A, TSMT; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes
-
Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 40V, 0.60A, TO-92
- VCEO: 40 volts
- IC(max): 600 milliamps
- Features: General Purpose BJT, Other
- Polarity: NPN
-
Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Nexperia B.V.
Description: 40 V, 100 mA NPN/NPN general-purpose transistor
- VCEO: 40 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
- TJ: 150 C
-
Supplier: Nexperia B.V.
Description: NPN/NPN matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. PNP/PNP complement: BCM857BS Matched version of: BC847BS Features and benefits Current gain matching Base-emitter
- Polarity: NPN
- Features: Other
-
Transistors - NPN+NPN, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) -- IMH1ASupplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 80V, 1A/SOT223; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes
-
Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) AEC-Q101 qualified Applications Switching and linear amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 80V, 1A, SOT1061; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 60V, 1A, SOT1061; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
-
Supplier: Nexperia B.V.
Description: NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain
- Transistor Grade / Operating Range: Automotive
- Features: Other
-
Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT25
-
Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Utmel Electronic Limited
Description: RF TRANSISTOR NPN SOT-523
- Number of Transistors in the Chip: 1
- TJ: 150 C
- Power Gain: 11 dB
- Output Power: 0.125 watts
-
Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- IC(max): 35 milliamps
- VCEO: 10 volts
- Power Gain: 9.5 dB
- Noise Figure: 1.8 dB
-
Supplier: Utmel Electronic Limited
Description: TRANSISTOR NPN 80V 1A SOT1061
- Polarity: NPN
- Features: Other
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
- VCEO: 180 volts
- IC(max): 1,000 milliamps
- PD: 300 milliwatts
- TJ: 150 C
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
-
Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
-
Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN, PNP
- Features: Other
-
Supplier: Micross Components, Inc.
Description: Micross Continues to Build Inventory on the Industry's Most Popular Parts Part Number - Manufacturer - Description - Availability - Request Quote 1N3595 Fairchild/Onsemi High Conductance Fast Diode Available
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 1A, Bipolar Transistor, Bipolar RF Transistors. This listing
- IC(max): 1,000 milliamps
- VCEO: 50 volts
- PD: 19,000 milliwatts
- TJ: -65 C
-
Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, GERMANIUM TYPE 2N78A
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors.
- IC(max): 100 milliamps
- PD: 150 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
-
Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 1A, Bipolar Transistor, Single Bipolar
- IC(max): 1,000 milliamps
- VCEO: 400 volts
- VCBO: 700 volts
- PD: 1,000 milliwatts
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar
- IC(max): 800 milliamps
- VCEO: 80 volts
- VCBO: 90 volts
- PD: 1,000 milliwatts
Find Suppliers by Category Top
Featured Products Top
-
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a testament to ON Semiconductor's commitment to providing reliable and efficient electronic (read more)
Browse Thermistors Datasheets for Win Source Electronics -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
Browse Transistors Datasheets for Nexperia B.V. -
?off frequency, supports DC–56GHz full?range microwave signal transmission, adapts to multi?band communication needs Superior signal stability: Multi?contact structure reduces rotation?caused jitter, low insertion loss (<1dB), tiny loss fluctuation (<0.5dB), stable (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
in industrial scenarios. The standing wave ratio (VSWR) of all RF channels is strictly controlled below 1.5, a core indicator that effectively reduces signal reflection and transmission loss. This low-loss transmission characteristic ensures that high-frequency RF microwave signals maintain complete (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance (read more)
Browse Transistors Datasheets for Advanced Linear Devices, Inc.