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Supplier: Skyworks Solutions, Inc.
Description: The OLI149 is designed especially for high-reliability applications that require optical isolation in radiation environments such as gamma , neutron, and proton radiation with high CTR and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon photo-transistor
- Output: Phototransistor
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Supplier: Skyworks Solutions, Inc.
Description: The OLH249 is designed especially for high-reliability applications that require optical isolation in radiation environments, such as gamma, neutron, and proton radiation with high current transfer ratio (CTR) and low saturation VCE. Each optocoupler consists of an LED and N-P-N
- Isolation Voltage: 1,000 volts
- Output: Phototransistor
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Supplier: Skyworks Solutions, Inc.
Description: The OLC049 can be used for large satellite constellation applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with a high Current Transfer Ratio (CTR) and low saturation VCE. Each optocoupler consists of an LED and
- Isolation Voltage: 1,000 volts
- Output: Phototransistor
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Supplier: Isobaud, Inc.
Description: The IBH249 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a hermetic TO-5 package. Features Hermetic 6-pin TO-5 package 1000Vdc isolation voltage High CTR High reliability and rugged construction High reliability screening available Radiation tolerant
- Isolation Voltage: 1,000 volts
- Rise Time: 25 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 125 C
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Supplier: Skyworks Solutions, Inc.
Description: The OLS449 is specifically designed for high reliability and space applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with a high current transfer ratio (CTR) and low saturation VCE. Each optocoupler consists of an
- Isolation Voltage: 1,000 volts
- Output: Phototransistor
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Supplier: Isobaud, Inc.
Description: screening available Radiation tolerant Open collector output Low input LED current Operating temperature range -55°C to +125°C Applications Computer peripheral interface Motor control Actuation
- Isolation Voltage: 1,500 volts
- Rise Time: 0.06 to 0.14 µs
- Collector Emitter Breakdown Voltage: 3 volts
- Operating Temperature: -55 to 125 C
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Supplier: Isobaud, Inc.
Description: screening available Radiation tolerant Open collector output Operating temperature range -55°C to +125°C Applications Switch mode power supplies Computer peripheral interface Motor control Ground signal isolation
- Isolation Voltage: 1,500 volts
- Rise Time: 2 to 10 µs
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: Isobaud, Inc.
Description: The IBH7000 consists of input LED optically coupled to two PIN photodiode detectors in a hermetic 8-pin DIP package. The input side photodiode allows an external feedback loop to ensure constant LED light output. A matched output photodiode drives an output circuit electrically isolated from the
- Isolation Voltage: 1,500 volts
- Rise Time: 2 µs
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: Micropac Industries, Inc.
Description: No Description Provided
- Isolation Voltage: 500 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: The 66191 Optocoupler consists of a 660 nm GaAIAs LED optically coupled to a photodiode detector driving a radiation tolerant transistor. This configuration has proven to be highly tolerant to both proton and total dose radiation. Radiation tests performed on the 66099
- Isolation Voltage: 1,000 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: No Description Provided
- Isolation Voltage: 1,000 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 150 volts
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: No Description Provided
- Isolation Voltage: 1,000 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 100 C
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Supplier: Broadcom Inc.
Description: and small junctions offered by the IC process provides better radiation immunity than conventional photo transistor optocouplers. The supply voltage can be operated as low as 2.0 V without adversely affecting the parametric performance. These devices have a 300% minimum CTR at an input
- Isolation Voltage: 1,500 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: Win Source Electronics
Description: TLP781F(D4GRLT7F)TLP781F(D4GRL-T7,F; TLP781F(D4GRL-T7,F); Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -25 °C Max Power Dissipation: 250 mW
- Operating Temperature: -25 to 85 C
- Features: Other
- Mounting Option: Surface Mount
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Supplier: Win Source Electronics
Description: Temperature: 110 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 200 mW Collector Emitter Voltage (VCEO): 80 V Max Collector Current: 10 mA Collector Emitter Saturation Voltage: 300 mV Max Input Current: 20 mA
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 110 C
- Features: Other
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Supplier: Win Source Electronics
Description: Market: 49 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -25 °C Max Power Dissipation: 240 mW Collector Emitter Voltage (VCEO): 80 V Max Collector Current: 50 mA Max Input
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -25 to 85 C
- Features: Other
- Mounting Option: Surface Mount
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Supplier: Win Source Electronics
Description: Threat In the Open Market: 42 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -25 °C Max Power Dissipation: 240 mW Collector Emitter Voltage (VCEO): 80 V Max Collector Current:
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -25 to 85 C
- Features: Other
- Mounting Option: Surface Mount
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Description: (LEDs); infrared-emitting diodes (IREDs); laser diodes. - Semiconductor photoelectric detectors, including: photodiodes; phototransistors. - Semiconductor photosensitive devices. - Semiconductor devices utilizing the optical radiation for internal operation, including: photocouplers,
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Transistors - High Reliability - Space - Power - Rad hard power ICs - RIC7S113E4SCS -- RIC7S113E4SCSSupplier: Infineon Technologies AG
Description: Rad hard high and low side gate driver - MIL-PRF-38535 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical
- Features: Other
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Transistors - High Reliability - Space - Power - Rad hard power ICs - RIC7S113L4SCB -- RIC7S113L4SCBSupplier: Infineon Technologies AG
Description: Rad hard high and low side gate driver - MIL-PRF-38535 Level B Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical
- Features: Other
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Transistors - High Reliability - Space - Power - Rad hard power ICs - RIC7S113L4SCS -- RIC7S113L4SCSSupplier: Infineon Technologies AG
Description: Rad hard high and low side gate driver - MIL-PRF-38535 Level S Screening RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical
- Features: Other
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Supplier: Infineon Technologies AG
Description: Rad hard high and low side gate driver - COTS RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is intended for harsh radiation environments such as space, with electrical parameters specified pre and
- Features: Other
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Skyworks through its space and defense product line provides unscreened catalog products along with screened and hermetically sealed high-reliability, high performance, radiation-tolerant, optocouplers operating in full military and space temperature range (-55oC to (read more)
Browse Optocouplers Datasheets for Skyworks Solutions, Inc. -
HCPL-6751: Robust Signal Isolation for Mission-Critical Systems Designed for harsh operating conditions, the HCPL-6751 provides unmatched reliability for high-radiation (read more)
Browse Resistors Datasheets for Win Source Electronics
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LED Technologies for Optocouplers: Fundamental Issues and Hardness Assurance
[8] T. F. Miyahira and A. H. Johnston, “Trends in optocoupler radiation degradation,” IEEE Trans.
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Radiation Damage in Power MOSFET Optocouplers
… L. Hash, S. Buchner, J. Mann, L. Simkins, M. D’Ordine, C. A. Marshall, M. V. O’Bryan, C. M. Seidlick, L. X. Nguyen, M. A. Carts, R. L. Ladbury, and J. W. Howard, “A compendium of recent optocoupler radiation test data,” in …
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Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers
4) Optocoupler radiation response exhibits large part-to-part variability.
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Recent photonics activities under the NASA Electronic Parts and Packaging (NEPP) program
Early investigations2 of optocoupler radiation sensitivity under the NEPP Program were prompted by optocoupler failures observed on the TOPEX/Poseidon satellite, as shown in Figure 2.
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Radiation Effects in Optoelectronic Devices
[101] T. F. Miyahira and A. H. Johnston, “Trends in optocoupler radiation degradation,” IEEE Trans.
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Analysis of the proton-induced permanent degradation in an optocoupler
For optocoupler radiation , damage due to gamma rays and proton exposure causes a permanent degradation of the current transfer ratio (CTR) [10]–[12].
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14-MeV neutron and Co/sup 60/ gamma testing of a power MOSFET optocoupler
… L. Hash, S. Buchner, J. Mann, L. Simpkins, M. D’Ordaine, C. A. Marshall, M. V. O’Bryan, C. M. Seidleck, L. X. Nguyen, M. A. Carts, R. L. Landbury, and J. W. Howard, “A compendium of recent optocoupler radiation test data,” in …
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Proton, neutron, and gamma degradation of optocouplers
… Howard, J. Wert, D. Oberrg, E. Normand, A. Johnston, G. Lum, J. Schwank, G. Hash, S. Buchner, J. Mann, L. Simpkins, M. D’Ordine, M. O’Bryan, C. Seidleck, L. Nguyen, and M. Carts, “A compendium of recent optocoupler radiation test data,” in …
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Pulsed laser evaluation of single event transients in optocouplers
[8] K.A. LaBel, S.D. Kniffin, R.A. Reed, et al. “A compendium of recent optocoupler radiation test data,”.
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Subject index
Germanicus, R., + , T-NS Jun 02 1421-1425 trends in optocoupler radiation degradation.