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Supplier: Light in Motion LLC
Description: The LIM-ATS2 is a small, low profile photo detector. It incorporates a phototransistor detector chip which makes it ideal choice for low cost ambient light detection applications. Features Spectral response similar to human eye Good linearity across wide wavelength range Small
- Peak Wavelength: 630 nm
- Collector Dark Current: 100 nA
- Operating Temperature: -40 to 85 C
- Phototransistor Type: Phototransistor
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of photo detectors ranging from standard silicon photo diodes to InP Pin Photo Diodes. Our standard InP photo diodes have a spectral sensitivity range in the 400nm to 1000nm range for applications such as optical switching and sensing requiring high speed,
- Peak Wavelength: 880 nm
- Collector Dark Current: 100 nA
- Phototransistor Type: Phototransistor
- Mounting Option: Surface Mount
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Supplier: Kingbright Corporation
Description: Features and Applications Mechanically and spectrally matched to the infrared emitting LED lamp Package: 1000pcs / bag RoHS compliant Ideal for consumer applications Suitable for computer peripherals Suitable for industry applications Available with clean and blue tinted lens
- Phototransistor Type: Phototransistor
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Supplier: Kingbright Corporation
Description: Features and Applications Low power consumption Popular T-1 3/4 diameter package Viewing angle - 30° Available on tape and reel RoHS compliant Ideal for consumer applications Suitable for computer peripherals Suitable for industry applications Available with clean and blue
- Phototransistor Type: Phototransistor
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Supplier: Kingbright Corporation
Description: Features and Applications Through-Hole with side-emitting LED Side-looking package Low power consumption Reliable and rugged Excellent uniformity of light output RoHS compliant Ideal for consumer applications Suitable for computer peripherals Suitable for industry applications
- Phototransistor Type: Phototransistor
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Supplier: Isobaud, Inc.
Description: The IB14P1 / IB14P2 consist of silicon phototransistors mounted in a narrow angle hermetic TO-18 package. Features Hermetic 3-pin TO-18 package Narrow reception angle High reliability and rugged construction High reliability screening available Radiation tolerant Operating temperature range
- Collector Current: 13 milliamps
- Collector Dark Current: 100 nA
- Collector-emitter Breakdown Voltage: 30 volts
- Power Dissipation: 300 milliwatts
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Supplier: Skyworks Solutions, Inc.
Description: The OLI149 is designed especially for high-reliability applications that require optical isolation in radiation environments such as gamma , neutron, and proton radiation with high CTR and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon photo-transistor that is
- Output: Phototransistor
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Supplier: Isobaud, Inc.
Description: The IBS010 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hermetic surface mount package. Features Hermetic 4-pin LCC package 1000Vdc isolation voltage High CTR Small package outline High reliability and rugged construction High reliability
- Isolation Voltage: 1,000 volts
- Rise Time: 20 µs
- Collector Emitter Breakdown Voltage: 60 volts
- Operating Temperature: -55 to 125 C
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Supplier: Isobaud, Inc.
Description: The IBI100 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hybrid surface mount package. Features Hybrid 6-pin package 1500Vdc isolation voltage High CTR Small package outline High reliability and rugged construction High reliability
- Isolation Voltage: 1,500 volts
- Rise Time: 5 to 15 µs
- Collector Emitter Breakdown Voltage: 30 volts
- Operating Temperature: -55 to 125 C
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Supplier: Kingbright Corporation
Description: Features and Applications 2.0 x 1.25 x 0.75mm (LxWxH) SMT LED Wide viewing angle Low power consumption Compatible with automation placement equipment Package: 2000pcs / reel Moisture sensitivity level : level 3 RoHS compliant Ideal for consumer applications Suitable for computer
- Phototransistor Type: Phototransistor
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Supplier: Skyworks Solutions, Inc.
Description: The OLS100 is designed especially for applications that require optical isolation with a high CTR and low saturation VCE. Each OLS100 device consists of an LED and N-P-N silicon phototransistor, mounted and coupled in a custom hermetic surface-mount Leadless Chip Carrier (LCC) package.
- Output: Phototransistor
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Supplier: Skyworks Solutions, Inc.
Description: The OLS010 is specifically designed for high reliability applications that require optical isolation with a high CTR and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic,
- Output: Phototransistor
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Supplier: Skyworks Solutions, Inc.
Description: The OLH1249 is designed especially for high-reliability applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with high CTR and low saturation VCE. The OLH1249 consists of an LED and N-P-N silicon phototransistor mounted and
- Output: Phototransistor
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Supplier: Isobaud, Inc.
Description: The IBS049.NEO consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hermetic surface mount package, specifically screened and qualified for NewSpace, near earth orbit, and low earth orbit (LEO) applications.
- Isolation Voltage: -1,000 to 1,000 volts
- Rise Time: 25 µs
- Collector Emitter Breakdown Voltage: 0.3 volts
- Operating Temperature: -55 to 125 C
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Sensors, Transducers>Optical Sensors>Phototransistors Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 6.3V Temperature Coefficient: X7R Operating Temperature: -40°C ~ 85°C Applications: Buck Converters Mounting Type: Fixed Package
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation.
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Supplier: Broadcom Inc.
Description: The 4N35-000E is an optocoupler for general purpose photocoupler applications. It contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Response time, tr, is typically
- Isolation Voltage: 3,550 volts
- Rise Time: 3 µs
- Collector Emitter Breakdown Voltage: 30 volts
- Operating Temperature: -55 to 100 C
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Supplier: Win Source Electronics
Description: Manufacturer: QT Optoelectronics Win Source Part Number: 1241332-QSE113 Manufacturer Homepage: www.fairchildsemi.com/ Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
- Features: Photoelectric Sensors
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Supplier: Win Source Electronics
Description: Manufacturer: Sharp Microelectronics Win Source Part Number: 1240335-PT480 Manufacturer Homepage: sharp-world.com/ Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Application Field: Used in Sensing & Instrumentation, Automation & Process Control,
- Features: Photoelectric Sensors
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Supplier: Win Source Electronics
Description: Dimension: Radial VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Industrial Quantity per package: 500
- Features: Photoelectric Sensors
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Supplier: OSRAM Opto Semiconductors
Description: SMT Multi TOPLED with IR Emitter 850nm and Si-Phototransistor
- Peak Wavelength: 850 nm
- LED Type: Infrared
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Supplier: Broadcom Inc.
Description: The ACPL-K49U is a single channel, high temperature, high CMR, 20 kBd digital optocoupler, configurable as a low power, low leakage phototransistor, specifically for use in industrial applications. The stretched SO-8 stretched package outline is designed to be compatible with standard
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 125 C
- Input: DC
- Output: Phototransistor
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Supplier: Broadcom Inc.
Description: The ACPL-M49T is a single channel, high temperature, high CMR, 20kBd digital optocoupler, configurable as a low power, low leakage phototransistor, specifically for use in the automotive applications. The SO-5 JEDEC registered (MO-155) package outline is surface mountable. This digital
- Isolation Voltage: 1,500 volts
- Operating Temperature: -40 to 125 C
- Input: DC
- Output: Phototransistor
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Supplier: Broadcom Inc.
Description: applications. The shallow depth of the IC photodiode provides better radiation immunity than conventional phototransistor couplers. This product is also available with the transistor base node connected to improve common mode immunity and ESD susceptibility. In addition, higher CTR
- Isolation Voltage: 1,500 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: Allied Electronics, Inc.
Description: excess of 36” (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.059” (1.50 mm) thick material. This product is designed for general switching and low-speed data communications applications. Applications: Non-contact reflective
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Supplier: Linear Systems
Description: The LS627 Photo FET Light Sensitive N-Channel JFET is a direct replacement for Crystalonics FF627 Series. It is ideal for switching, laser detection application. Available in TO-72 4L ROHS. All Linear Systems devices are available with special testing to customer specification.
- Power Dissipation: 400 milliwatts
- Rise Time: 30 ns
- Phototransistor Type: Phototransistor
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Supplier: Allied Electronics, Inc.
Description: Dual Quad Channel Phototransistor Output Optocouplers, 1.25 V (Typ.) Lead-free component The ILD2⁄ILQ1⁄2 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while
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Supplier: Micropac Industries, Inc.
Description: The 66291 contains 2 proton tolerant LEDs optically coupled to 2 silicon planar phototransistors. The optocoupler is in a surface mount Glob Top molded plastic Gull Wing package with 0.050” lead spacing. The package eliminates the need for thru-hole mounting and is well suited for high
- Isolation Voltage: 1,500 volts
- Rise Time: 3 µs
- Collector Emitter Breakdown Voltage: 30 volts
- Operating Temperature: -55 to 125 C
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Supplier: ABB Inc.
Description: and the ability of switching high currents on a small footprint thus can be used in applications where space saving is essential. Main benefits Space saving Modular LED integrated on all sockets Main features 9 different coil voltages from 5-24 V DC / 12-230 V AC/DC 1 c/o contact (6 A),
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Phototransistors Phototrans IR Chip NPN Transistor 880nm Product overview: QSD123A4R0 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- PD: 100 milliwatts
- Features: Bipolar RF Transistors, Other
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Mission critical communications require precision systems that operate faultlessly under the most extreme conditions. Skyworks offers a broad portfolio of high reliability products for aerospace and defense applications. (read more)
Browse Phototransistors Datasheets for Skyworks Solutions, Inc. -
infrared (IR) LEDs and phototransistors, these sensors can distinguish between transparent and opaque fluids, making them suitable for diverse media, including water, oils, chemicals, and viscous liquids. 2. Non-Contact Measurement A standout feature of (read more)
Browse Liquid Level Sensors Datasheets for Intellisense Microelectronics Ltd. -
PrevEx Flammability Analyzers, fomerly the 670 Series, work where other analyzers fail. PrevEx Flammability Analyzers solve all of the sampling, measuring, and reporting problems found in industrial process applications for LFL(lower flammable limit/ LEL monitoring. Prev (read more)
Browse Gas Instruments Datasheets for Control Instruments Corp.
Conduct Research Top
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Modeling Phototransistor Optocouplers Using PSPICE Simulation Software
While designed for measurement parameters like Voltage and Current, PSPICE programs are not comfortable with evaluating or simulating components in photometric units. This application note provides guidelines for using PSPICE to model phototransistor optocouplers.
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Application Note for QVE01040
The QVE01040 phototransistor optical interrupter switch, consists of an infrared LED emitter that is optically coupled to a phototransistor detector through a 0.3 mm aperture on both sides. The emitter and detector are separated by a slot, 1.1mm wide and 3.7mm deep. The QVE01040 is configured
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Logic Output Opto Devices
Most of the Opto devices sensor devices on the market are designed with analog outputs (photodiodes, phototransistors) that requires an analog to digital conversion to interface with the application. Light in Motion offers a range of devices that include the digital conversion, hence simplifying
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How Does an Optical Encoder Work?
optical encoder uses opaque and transparent segments arranged in a gray-code pattern. The stator has corresponding pairs of LEDs and phototransistors arranged so that the LED light shines through the transparent sections of the rotor disc and received by phototransistors on the other side. After
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Implementing a Simple Serial Mouse Controller
interfaces to the host via a dedicated interface card or an RS-232 port. Their mechanisms are very similar. The major electrical components of a mouse are: ? Microcontroller ? Photo-transistors ? Infrared emitting diode ? Voltage conversion circuit The intelligence of the mouse is provided
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Applied Mechatronics
Figure 11.18 shows the electronic symbol for a phototransistor and three phototransistor ap- plications .
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Ultra‐Thin Layered Ternary Single Crystals [Sn(S x Se 1− x ) 2 ] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates
Recently, few-layered InSe was outlined to possess a band gap of 1.4 eV, creating its feasibility for near-infrared (NIR) phototransistor application .[8,14] But for middle IR phototransistors, a fair smaller band gap would be fascinating to enlarge the…
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Controllable Growth Orientation of SnS 2 Flakes for Low‐Noise, High‐Photoswitching Ratio, and Ultrafast Phototransistors
However, the reported exfoliated single-layer SnS2 phototransistors demonstrated large background current (µA order), low-photoswitching ratio (≈2.5) and long response time (second order).[15] The large noise and low photoresponse seriously limited the phototransistor applications in weak signal and high…
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Infrared phototransistor validation for atmospheric remote sensing application using the Raman-shifted eye-safe aerosol lidar
One questionable performance that prevents phototrans- istor applications in lidar systems is the nonlinearity of the output current relative to the incident radiation intensity, or dynamic range.
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Cadmium Sulfide Field Effect Phototransistor
Summary-The experimental evaluation of cadmium sulfide field effect transistors indicates that, although the material does not compete with germanium for general transistor application, useful power gain was achieved and certain advantages exist for CdS in phototransistor applications .
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Ultrahigh and Broad Spectral Photodetectivity of an Organic–Inorganic Hybrid Phototransistor for Flexible Electronics
PBDTT- DPP:PC61BM/IGZO devices have very low off-current level below 50 pA as shown in Figure 2c; therefore, they would be good candidates and can be used in the phototransistor applications .
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Organic thin-film phototransistors based on poly(3-hexylthiophene)
However, the use of P3HT for phototransistor applications is only reported in combination with other compounds.
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Modified bipolar-phototransistor structure
The n+ surface diffusion reduced the collector-base breakdown voltage from 75 V to 9 V, which is still adequate for most phototransistor applications .
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Tachistoscopic illumination and masking of real scenes
Photodiode/ phototransistor application circuit (Sharp Application Note SMA99017).
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Transparent pentacene-based photoconductor: high photoconductivity effect
These promis- ing results indicate that the materials could find use in transparent organic phototransistor applications .