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Supplier: OSRAM Opto Semiconductors
Description: Ultra fast SMT PIN Photodiode in small Chipled package,
- Spectral Response Range: 400 to 1,050 nm
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Photodiode Package: Surface Mount Technology (SMT)
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Supplier: Clairex Technologies, Inc.
Description: Fiber Optic Components
- Sensitivity: 0.55 A/W
- Rise Time: 6 ns
- Dark Current: 5 nA
- Photodiode Package: Leaded
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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: OSRAM Opto Semiconductors
Description: PIN Photodiode with integrated Temperature Sensor
- Spectral Response Range: 740 to 1,100 nm
- Active Area Diameter or Length: 0.56 mm
- Active Area Height: 0.56 mm
- Photodiode Spectral Response: IR
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
- Photodiode Spectral Response: IR, Visible
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: First Sensor AG
Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment. Features:
- Spectral Response Range: 1,064 nm
- Active Area Diameter or Length: 14.000000000000002 mm
- Rise Time: 12 ns
- Dark Current: 10 nA
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Supplier: First Sensor AG
Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment. Features:
- Spectral Response Range: 1,064 nm
- Active Area Diameter or Length: 5.300000000000001 mm
- Rise Time: 12 ns
- Dark Current: 1.5 nA
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Supplier: Allied Electronics, Inc.
Description: Optoisolator; Analog; 8-Pin DIP; Photodiode; w/Feedback Photodiode
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Supplier: OSI Optoelectronics
Description: module offers high reliability satisfying TELCORDIA GR-468-CORE. The LPD 3080 coaxial devices are available with either a 245 um or 900 um jacketed fiber and are available at two back reflection levels. Product Features InGaAs PIN Photodiode Low Dark Current High Responsivity Low PDL
- Sensitivity: 0.85 to 0.9 A/W
- Spectral Response Range: 245 to 900 nm
- Active Area Diameter or Length: 0.07500000000000001 mm
- Operating Temperature: -40 to 85 C
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Supplier: OSI Optoelectronics
Description: the photons of shorter wavelengths absorbed in the top silicon and the photons of longer wavelengths penetrating deeper, absorbed by the bottom photodiode. For applications requiring a wider range of wavelength beyond 1.1 µm, an InGaAs photodiode replaces the bottom photodiode.
- Sensitivity: 0.12 A/W
- Spectral Response Range: 950 to 1,060 nm
- Active Area Diameter or Length: 2.54 mm
- Active Area Height: 2.54 mm
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, flat and lensed side lookers as well as a surface
- Sensitivity: 0.45 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 0.4000000000000001 mm
- Active Area Height: 0.4000000000000001 mm
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Supplier: RS Components, Ltd.
Description: Si PIN photodiode
- Spectral Response Range: 320 to 1,100 nm
- Photodiode Type: PIN Photodiode
- Photodiode Spectral Response: UV
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Supplier: Light in Motion LLC
Description: Features Daylight Filter; BPW34FS Clear Lens; BPW34CS Chip Size 3mm square Sensitive area 2.55 mm square High Sensitivity Low Capacitance Reception Angle 120 degrees Surface Mount Package options: Suffix GR : Gullwing ( overmount PCB ) Suffix ZR : Z bend ( undermount PCB )
- Spectral Response: 400 to 1,100 nm
- Output Type: Current Output
- Module Type: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode Module
- Sensitivity: 0.15 A/W
- Operating Temperature: 0 to 70 C
- Features: Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Spectral Response Range: 900 nm
- Photodiode Type: PIN Photodiode
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Low Capacitance 10x10mm Area
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Supplier: Accuris
Description: PROCUREMENT SPECIFICATION FOR A SILICON PIN PHOTODIODE
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Supplier: Newark, An Avnet Company
Description: PIN PHOTODIODE, 950NM, SMD; No. of Pins:2Pins; Diode Case Style:SMD; Wavelength of Peak Sensitivity:950nm; Angle of Half Sensitivity ±:75°; Dark Current:1000pA; Operating Temperature Min:-40°C; Operating Temperature Max:100°C; RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: PIN PHOTODIODE, 900NM, SMD; No. of Pins:2Pins; Diode Case Style:SMD; Wavelength of Peak Sensitivity:900nm; Angle of Half Sensitivity ±:35°; Dark Current:1000pA; Operating Temperature Min:-40°C; Operating Temperature Max:100°C; RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: PIN PHOTODIODE, 940NM, SMD; No. of Pins:4Pins; Diode Case Style:SMD; Wavelength of Peak Sensitivity:940nm; Angle of Half Sensitivity ±:65°; Dark Current:2000pA; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; RoHS Compliant: Yes
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Sensitivity: 0.54 A/W
- Spectral Response Range: 320 to 1,060 nm
- Active Area Diameter or Length: 5.000000000000001 mm
- Active Area Height: 5.000000000000001 mm
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Description: SENSOR PHOTODIODE PIN
- Photodiode Type: PIN Photodiode
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Supplier: Newark, An Avnet Company
Description: SILICON PIN PHOTODIODE, 550NM, SMD ROHS COMPLIANT: YES
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Supplier: Utmel Electronic Limited
Description: 900 nm ±15° Sensitivity Surface Mount Silicon PIN Photodiode
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Supplier: Utmel Electronic Limited
Description: OFP Series 905 nm wavelength Fiber Optic High Speed PIN Photodiode
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: 100 MM SQ. 450-950NM FLAT RESPON
- Sensor Technology: Optical Linear Encoder
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Supplier: Utmel Electronic Limited
Description: PHOTODIODE SILICON PIN SMD
- VR: 20 volts
- Tj: -40 to 110 C
- Features: Other
- RoHS Compliant: RoHS Compliant
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 450-950NM MOD
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Supplier: Utmel Electronic Limited
Description: PHOTODIODE IR PIN GW 2-PLCC
- VR: 32 volts
- Tj: -25 to 85 C
- Features: Other
- RoHS Compliant: RoHS Compliant
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Sensitivity: 35 to 50 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.04 mm
- Active Area Height: 230 mm
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Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Sensors, Transducers - Optical Sensors - Photodiodes Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 5kHz Frequency Stability: ±10ppm Frequency Tolerance: ±40ppm Load Capacitance: 12.5pF
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Supplier: IDEA, Inc.
Description: No Description Provided
- Active Area Diameter or Length: 5.25 mm
- Active Area Height: 7.6000000000000005 mm
- Rise Time: 50 ns
- Photodiode Spectral Response: IR
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Supplier: IDEA, Inc.
Description: No Description Provided
- Active Area Diameter or Length: 3 mm
- Active Area Height: 2.2 mm
- Rise Time: 6 ns
- Photodiode Spectral Response: IR
Find Suppliers by Category Top
Featured Products Top
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
The ISL400DE is a highly integrated CMOS photoelectric sensor IC, widely used in diffuse reflection photoelectric sensors. The chip integrates the following features: PD photodiode receiver LED emitter driver Switched-capacitor signal amplifier Mode switching (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
The ISL500KE is a highly integrated CMOS photo IC, widely used in diffuse reflection, cross beam curtain, through beam curtain, and similar applications The chip integrates the following features: PD photodiode receiver, LED emitter driver, Switched (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
sensors like photodiodes and are building blocks that explain the performance and stability of many circuits. Many people often confuse (read more)
Browse Amplifier and Comparator Chips Datasheets for ODG (Origin Data Global) -
voltage Applications: Voltage follower/buffer/amplifier Charge integrator Photodiode amplifier Data acquisition systems High performance portable instruments Signal conditioning circuits Sensor and transducer (read more)
Browse Operational Amplifiers Datasheets for Advanced Linear Devices, Inc. -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
Conduct Research Top
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Amplifying High-Impedence Sensors ? Photodiode Example
amps, is broken down into four design steps: DC, stability compensation, closed-loop gain and noise This design step sets the DC gain and bias point to reduction. ensure proper operation. It also addresses DC offsets. A design using a PIN photodiode (light detector) illus- High-impedance sensors have
More Information Top
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Integrated Silicon Optoelectronics
Lateral PIN photodiodes , for instance, have been improved with the trench technology known from dynamic random access memory (DRAM) technology.
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http://dspace.mit.edu/bitstream/handle/1721.1/38685/164437296-MIT.pdf?sequence=2
Utilizing these Ge-on-Si films, vertically illuminated Ge-on-Si pin photodiodes are fabricated in a CMOS compatible process.
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Optoelectronic Sensors
PIN Photodiodes for the Visible and Near-Infrared . . .
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Page 37. Semiconductor parts with 300 in root number
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH GI-50 MULTI-MODE PIGTAIL .
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http://eprints.hud.ac.uk/8766/1/Fghosnafinalthesis.pdf
This thesis describes the novel technique of designing the optical receiver that consists of PIN photodiode as a photodetector, Semiconductor optical amplifier .
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Elements of Photonics, Volume II, For Fiber and Integrated Optics
… amera / 798 Miscellaneous Types of Light Detectors / 800 P IN Photodiode and APD / 801 12.4.1 Physical Structures of PIN a nd APD Photodetectors / 801 12.4.2 Responsivity of the PIN Photodiode and APD / 803 …
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Page 3. Semiconductor parts with 341 in root number
Supply voltage:0.3-3.8V; InGaAs PIN photodiode with preamp: 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps.
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Page 4. Semiconductor parts with 442 in root number
High-performance IR emitter and IR PIN photodiode in subminiature SMT package .
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Page 3. Semiconductor parts with 342 in root number
InGaAs PIN photodiode with preamp .
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https://digital.lib.washington.edu/researchworks/bitstream/handle/1773/25476/Kim_washington_0250O_10230.pdf?sequence=1&isAllowed=y
Flow-Through PIN Photodiodes for Integrated Micro Diagnostic Biosensors .
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