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Supplier: World Star Tech
Description: your computer to download and process the raw data. The high-performance smart driver automatically detects your diode pinout and can drive the diode in auto-current or auto-power control modes. The integrated TEC controller maintains your diode at its operating
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Supplier: RS Components, Ltd.
Description: , notebooks, LCD displays, mobile communications high speed sim card protection and IEEE1394 Fire Wire ports. Low capacitance. Unidirectional ESD diodes. Compact package. low leakage current. Low clamping voltage. Pb-free RoHS compliant package (see datasheet). Surge, Transient, ESD
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
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Supplier: RS Components, Ltd.
Description: , notebooks, LCD displays, mobile communications high speed sim card protection and IEEE1394 Fire Wire ports. Low capacitance. Unidirectional ESD diodes. Compact package. low leakage current. Low clamping voltage. Pb-free RoHS compliant package (see datasheet). Surge, Transient, ESD
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
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Supplier: Schaffner EMC Inc.
Description: utilization of electrical system capacity Filters for diode rectifiers Frequency : 60 Hz THID : ~5% (with Ldc) Datasheet more
- FIlter Type: Passive
- Frequency: 60 Hz
- Nominal Input Voltage: 380 V, 480 V, Other
- Operating Temperature: -25 to 40 C
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Supplier: World Star Tech
Description: World Star Tech Benchtop Lasers are ultra-compact and easy-to-use thanks to the intuitive touch screen interface and high resolution display. Laser output is low-noise and optical power is stable within 1%. The integrated TEC controller maintains 0.01° of temperature precision. The
- Laser Type: Laser Diodes
- Laser Wavelength: Red
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Supplier: Fairview Microwave Inc.
Description: ready for quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 12 GHz and a maximum power of 25 Watts. PIN diode single pole double throw
- Connector: SMA
- Frequency Range: 0.0 to 12000 MHz
- Impedance: 50 ohms
- Insertion Loss: 2 dB
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Supplier: Fairview Microwave Inc.
Description: ready for quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with N ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 100 Watts. PIN diode single pole double throw RF
- Connector: Type N
- Frequency Range: 500 to 6000 MHz
- Impedance: 50 ohms
- Insertion Loss: 1.5 dB
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Supplier: Fairview Microwave Inc.
Description: ready for quick shipment. Our PIN diode RF switch is manufactured in a SP4T design (single pole four throw) with SMA ports. Our coaxial SP4T PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 40 Watts. PIN diode single pole four throw RF
- Connector: SMA
- Frequency Range: 0.0 to 6000 MHz
- Impedance: 50 ohms
- Insertion Loss: 2 dB
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Supplier: Fairview Microwave Inc.
Description: ready for quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 40 Watts. PIN diode single pole double throw RF
- Connector: SMA
- Frequency Range: 0.0 to 6000 MHz
- Impedance: 50 ohms
- Insertion Loss: 1.3 dB
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Supplier: Transtector Systems, Inc.
Description: -day from Transtector.Single-p hase surge protector strip for lightning protection and other spikes in electrical power has a maximum amperage of . Transtector TVSS AC power protection device PDF datasheet with details of specifications and CAD drawing with dimensions for
- Certification: UL
- Configuration Features: On/Off Switch
- Current Rating: 15 amps
- Frequency: 50 Hz, 60 Hz
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Supplier: Transtector Systems, Inc.
Description: -day from Transtector.Single-p hase surge protector strip for lightning protection and other spikes in electrical power has a maximum amperage of . Transtector TVSS AC power protection device PDF datasheet with details of specifications and CAD drawing with dimensions for
- Certification: UL
- Configuration Features: On/Off Switch
- Current Rating: 15 amps
- Frequency: 50 Hz, 60 Hz
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Supplier: Broadcom Inc.
Description: The 5962-93140 is a high reliability DSCC SMD Class H single channel hermetically sealed power MOSFET optocoupler in an 8-Pin DIP ceramic package with gold plated leads. Solder dipped leads and various lead form options are also available. See the datasheet for details. The devices
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: The HSSR-7110 is a single channel hermetically sealed power MOSFET optocoupler in an 8-Pin DIP ceramic package with gold plated leads. Solder dipped leads and various lead form options are also available. See the datasheet for details. The device operates exactly like a solid-state
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Transtector Systems, Inc.
Description: surge protection for power spike suppression is part of the series. Gigabit Ethernet (1000Base-T) surge protector datasheet PDF of specifications and drawing with dimensions details for UHPSPK010 are available for download above. Protection from surge for Gigabit Ethernet (1000Base-T)
- Device Type: SPD, Dataline and DC Signal, Lightning Arrestor
- Mounting: Wall / Panel / Backboard Mount
- Technology: Silicon Avalanche Diode, Gas Tube
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Supplier: Transtector Systems, Inc.
Description: surge protection for power spike suppression is part of the series. Gigabit Ethernet (1000Base-T) surge protector datasheet PDF of specifications and drawing with dimensions details for UHPSPK250 are available for download above. Protection from surge for Gigabit Ethernet (1000Base-T)
- Device Type: SPD, Dataline and DC Signal, Lightning Arrestor
- Mounting: Wall / Panel / Backboard Mount
- Technology: Silicon Avalanche Diode, Gas Tube
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Supplier: Richardson RFPD
Description: MADT-011000 is a single-ended, internally-matched power detector with wide input bandwidth and high dynamic range. The circuit consumes 70 uA from a 4.5 V supply, while matched detector and reference diodes provide temperature compensation in differential operation. The power
- Frequency Range: 5000 to 44000 MHz
- dBm Measurement Range: 15 dBm
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Supplier: RS Components, Ltd.
Description: 60000 hours lifetime (to 70% original brightness). Built-in voltage regulation. Up to 5 strips can be linked to create longer chains. 24 V power supply required (see datasheet for compatible parts). LED Colours = White Number of LEDs = 6 Colour Temperature = 4000K Connection Types =
- Array: Yes
- Color: White, Other
- Color Temperature: 4000 K
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Supplier: Renesas Electronics Corporation
Description: . This feature eliminates a protective Schottky diode usually seen in a microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using the ISL6208. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns
- IC Package Type: Other
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Supplier: Infineon Technologies AG
Description: datasheet. The CYPD3177 device support the USB-PD (Power Delivery) protocol. Summary of Features Supports USB Type-C and USB-PD UFP-only with configurable RD and RD-DB Integrated analog blocks 30 V-tolerant regulator
- Category: Development Board
- Ports: USB
- Supported System: Other
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Supplier: Infineon Technologies AG
Description: TDA21462 | Integrated Smart Power Stages BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers BAT54-03W | Schottky Diodes BSS138W | Small signal
- Features: RoHS Compliant
- IC Package Type: Other
- TJ: -40 to 85 C
- Technology: Bluetooth
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Supplier: Renesas Electronics Corporation
Description: , with lower supply current. A Frequency Boost pin has been incorporated to enable the user to achieve lower output impedance despite using smaller capacitors. All improvements are highlighted in the “Electrical Specifications” section on page 3 of the datasheet. Critical parameters are
- IC Package Type: SOIC / SOP, Other
- Input Voltage (VIN): 1.5 to 12 volts
- Output Voltage (Volt): 1.5 to 22.8 volts
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Supplier: Microchip Technology, Inc.
Description: of required connections to FPGA. The rich features of HV7358 make it particularly suitable for portable/ultraportab le ultrasound imaging devices. For datasheet, demo board and further information, please contact local Microchip sales office. Additional Features
- Device Type: Beamformers, Transmitter
- IC Package Type: Other
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA824N6 -- BGA824N6Supplier: Infineon Technologies AG
Description: described in Chapter 3 (see datasheet). The BGA824N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 17.0 dB Out-of-band input 3rd order intercept
- Package Type: Other
- RoHS Compliant: Yes
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types are connected in series in opposite directions to balance the temperature coefficient to nearly zero. Diodes of this type are primarily used to offer a reference point for voltage in power supplies. For diodes of all types and much more, look no further than (read more)
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Ushio Red Laser Diodes: Available from 633 nm to 690 nm. HL63290HD and HL63520HD: High-power red laser diodes providing over 2W of power, suitable for projector applications (read more)
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the IC benefits and features, refer to the MAX17614 IC datasheet. Features and Benefits Ideal diode operation Fast reverse current-blocking protection(140 ns) Seamless power source switchover Robust protection reduces (read more)
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STMicroelectronics' 100 V trench diodes are designed for both industrial and automotive applications. The package offering from SOD123Flat to DPAK provide flexible solutions while supporting higher power density designs and improving overall application performance. The product (read more)
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HL67203HD LASER DIODE HL67203HD is a high power (1.3W) 670nm laser diode operating at high efficiency opening up applications in skin treatment and photo (read more)
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40213MG - High Power 405 nm 400 mW Violet Laser Diode HL40213MG is a single-mode high power violet laser diode by Ushio available in a compact 5.6 mm CAN package. HL40213MG boasts the industry’s highest optical power of 400 m (read more)
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WLD-100-685 laser diode has Single Mode. WLD-100-685 is ideal for measurement applications applications demanding reliable operations with a long lifetime and stable output power. Features Good FFP Performance High Power High Efficiency 5.6 mm (read more)
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Paralleling TVS Diodes for Higher Power Capability
Paralleling TVS Diodes for Higher Power Capability. Silicon Avalanche Transient Voltage Suppressors (TVS's) offer a great deal of flexibility in circuit protection. Fortunately, these devices are available in voltages ranging from 5 through 550 volts and in power ratings up to 230 kw. In addition
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Laser Diode Principles (.pdf)
A number of questions and misconceptions surround the laser diode. Are all laser diode specifications identical? Do single-mode diodes always operate as single-mode? What effect does temperature change have on wavelength and optical power? The following explores these and other common diode
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How to Choose Power FETs for ORing MOSFET Controllers
Using ORing controllers and power FETs in place of ORing power diodes can minimize power loss in high-current power distribution systems. This article discusses key selection steps for choosing power FETs, and provides design tips to ensure engineers meet their target specifications when developing
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AG312: Design with PIN Diodes
The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by DC excitation. A unique feature of the PIN diode is its ability to control large amounts of RF power with much lower levels of DC. The PIN diode
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Workmanship Standards for High Power InP-based Diode Lasers
The following note is to help partners and customers to understand the importance and the purpose of the workmanship standards for high power laser diodes of Indium Phosphide (InP) based material. It can be used to facilitate a successful operation with visual inspection of a semiconductor laser
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A Roadmap for SiC Power Modules and Diodes
The continual drive for greater efficiency and power density in power conversion systems is leading to the expanded use of silicon carbide (SiC). This wide-bandgap semiconductor has a dielectric breakdown capability 10 times that of silicon with excellent thermal conductivity.
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Frequently Asked Questions about Laser Diode Products
All of Power Technology's systems are linearly polarized. Index guided diodes typically have a polarization ratio between 50:1 and 100:1. For wide stripe diodes, the polarization ratio is typically 30:1 or greater. Our diode-pumped Nd:YAG systems have a ratio of 100:1.
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Technical Note - High Density Laser Diode Arrays
Northrop Grumman Cutting Edge Optronics has developed a new laser diode array package with minimal bar-to-bar spacing. These High Density Stack (HDS) packages allow for a power density increase on the order of ~ 2.5x when compared to industry-standard arrays. The HDS laser package enables power
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http://vbn.aau.dk/files/195761974/Online_Vce_measurement_method_for_wear_out_monitoring_of_high_power_IGBT_modules.pdf
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Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation
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A Practical Guide to Handling Laser Diode Beams
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Laser Diode Beam Basics, Manipulations and Characterizations
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