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Supplier: KEMET Electronics Corporation
Description: KEMET Multilayer Ceramic Capacitors (MLCCs) are a preferred capacitance solution, offering tremendous performance, reliability and cost advantages for circuit designers. Our comprehensive line of surface mount and through-hole devices are utilized in a wide variety of computer
- Applications: Aerospace, Automotive, General Purpose, High Current, High Frequency, Lighting, Motors / Motor Starting, Power Capacitors, Power Supply, RF / Microwave Capacitors
- Capacitance Range: 5.00E-7 to 100 microF
- Capacitance Tolerance: 20 (+/- %)
- Capacitance Type: Fixed
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Supplier: Knowles Precision Devices
Description: Row Capacitors are used where arrays of capacitors (not necessarily identical) are needed, usually for decoupling/ bypass of GaAs integrated circuits. Standard arrays can contain up to 10 capacitors from 0.04pF on up. Typical overall dimensions range from 20 x 10 mils on
- Applications: Bypass Capacitors, RF / Microwave Capacitors
- Capacitance Range: 4.00E-8 to 0.0033 microF
- Capacitance Type: Fixed
- Configuration / Form Factor: Other
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Supplier: Knowles Precision Devices
Description: and up Applications: Microwave Integrated Components GaAs Integrated Circuits DC Blocking RF Bypass Decoupling Temperature Compensation Circuits LC Filter Tuning
- Applications: Bypass Capacitors, RF / Microwave Capacitors
- Capacitance Range: 4.00E-8 to 0.0100 microF
- Capacitance Type: Fixed
- Configuration / Form Factor: Other
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Supplier: Knowles Precision Devices
Description: special terminations are available for high power LC filter applications. Applications: Microwave Integrated Components GaAs Integrated Circuits DC Blocking RF Bypass Decoupling Temperature Compensation Circuits LC Filter Tuning
- Applications: Bypass Capacitors, RF / Microwave Capacitors
- Capacitance Range: 4.00E-8 to 0.0033 microF
- Capacitance Type: Fixed
- Configuration / Form Factor: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1381473-600S120FW250 XT Category: Capacitors>Ceramic Capacitors Series: ATC 600S Features: High Q, Low Loss, Ultra Low ESR Package: Tape & Reel Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.81mm) Applications: RF, Microwave, High
- AC Rated Voltage (WVAC): 250 volts
- Capacitance Range: 1.20E-5 microF
- Capacitance Tolerance: 1 (+/- %)
- DC Rated Voltage Range (WVDC): 250 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1381474-600S680GT250 XT Category: Capacitors>Ceramic Capacitors Series: ATC 600S Features: High Q, Low Loss, Ultra Low ESR Package: Tape & Reel Size / Dimension: 0.063" L x 0.032" W (1.60mm x 0.81mm) Applications: RF, Microwave, High
- AC Rated Voltage (WVAC): 250 volts
- Capacitance Range: 6.80E-5 microF
- Capacitance Tolerance: 2 (+/- %)
- DC Rated Voltage Range (WVDC): 250 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1341018-600L220JT200 T Category: Capacitors - Ceramic Capacitors Series: ATC 600L Features: High Q, Low Loss, Ultra Low ESR Package: Tape & Reel Size / Dimension: 0.040" L x 0.020" W (1.02mm x 0.51mm) Applications: RF, Microwave, High
- AC Rated Voltage (WVAC): 200 volts
- Capacitance Range: 2.20E-5 microF
- Capacitance Tolerance: 5 (+/- %)
- DC Rated Voltage Range (WVDC): 200 volts
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1001005-600S200FT250 XT Category: Capacitors>Ceramic Capacitors Series: ATC 600S Features: High Q, Low Loss, Ultra Low ESR Package: Tape & Reel Applications: RF, Microwave, High Frequency, Bypass, Decoupling Standard Package: 4
- AC Rated Voltage (WVAC): 250 volts
- Capacitance Range: 2.00E-5 microF
- Capacitance Tolerance: 1 (+/- %)
- DC Rated Voltage Range (WVDC): 250 volts
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Supplier: Richardson RFPD
Description: The Type 160 series radial lead metallized polyester box capacitors are constructed in rugged rectangular plastic cases with lead spacings that are standard in the electronics industry. All Type 160 capacitors are available in bulk with a .217"" +/-.039"" lead length, and they are good
- AC Rated Voltage (WVAC): 250 volts
- Capacitance Range: 4.7 microF
- Capacitance Tolerance: 10 (+/- %)
- DC Rated Voltage Range (WVDC): 250 volts
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Supplier: Infineon Technologies AG
Description: MIPI 2.0 RFFE standard No decoupling capacitors required if no DC applied on RF lines Low harmonic generation High port-to-port isolation On-chip control logic including ESD protection No power supply blocking required High EMI robustness
- Actuator Type: SP8T, Other
- Actuator Voltage: 1.65 to 1.95 volts
- Control Interface: Other
- Frequency Range: 100 to 6000 MHz
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Supplier: Richardson RFPD
Description: dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are
- Amplifier Type: Power Amplifier
- Frequency Range: 400 to 52000 MHz
- Maximum Gain: 12 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Microchip Technology, Inc.
Description: decoupling capacitors. The bidirectional differential antenna pins, used for transmission and reception, eliminate the need for an external antenna switch. An internal 128 byte RAM buffers transmit and receive data. Two on chip low dropout (LDO) voltage regulators provide the internal
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: Microchip Technology, Inc.
Description: decoupling capacitors. The bidirectional differential antenna pins, used for transmission and reception, eliminate the need for an external antenna switch. An internal 128 byte RAM buffers transmit and receive data. Two on-chip low dropout (LDO) voltage regulators provide the internal
- Form Factor / Package: Surface Mount Technology (SMT), Other
- Operating Frequency: 2400 MHz
- Supply Voltage: 1.8 to 3.6 volts
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Supplier: Richardson RFPD
Description: decoupling capacitors. The bidirectional differential antenna pins, used for transmission and reception, eliminate the need for an external antenna switch. An internal 128 byte RAM buffers transmit and receive data. Two on-chip low dropout (LDO) voltage regulators provide the internal
- Device Type / Applications: Transceiver
- IC Package Type: QFN, Other
- Supply Voltage: 1.8 V, Other
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Supplier: Infineon Technologies AG
Description: to ground switches on each RF throw make BGSA147ML10 particularly efficient for switching inductors and capacitors in RF matching and antenna tuning circuits. Summary of Features Designed for high-linearity antenna tuning switching and RF tuning applications Ultra
- Primary Frequency Range: 400 to 7125 MHz
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Supplier: DuPont Electronics & Imaging
Description: DuPont™ Interra® embedded planar capacitor laminate is used to make thinner, more efficient power and ground planes within a multilayer printed wiring board. Interra® HK04J provides very low impedance at high frequency, power bus decoupling, and electromagnetic interference
- Features: Tested to IPC, UL Listed
- Length: 3 ft
- Materials of Construction: Plastic / Polymer, Polyimide (e.g., Kapton®)
- Width: 24 inches
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Supplier: Richardson RFPD
Description: The ADL5501 is a mean-responding TruPwr™ power detector for use in high frequency receiver and transmitter signal chains from 50 MHz to 6 GHz. It is easy to apply, requiring only a single supply between 2.7 V and 5.5 V and a power supply decoupling capacitor. The input is internally
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Supplier: Skyworks Solutions, Inc.
Description: and higher application board production yield. The device integrates the input match, the inter-stage match, the output match, the power detector with 15dB of dynamic range and a 3.8GHz notch filter. Only 6 external decoupling capacitors are required to complete the design. For
- Amplifier Type: Power Amplifier
- Applications: Other
- Frequency Range: 5150 to 5850 MHz
- Maximum Gain: 32 dB
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Supplier: Menlo Microsystems, Inc.
Description: -performance applications. The MM5622 has low insertion loss, fast switching speed, and can operate with greater than 3 billion switching cycles. The MM5622 system-in-package (SiP) solution fully integrates the switch driver and charge pump controlled through SPI or GPIO interfaces by a host
- Actuator Type: Other
- Actuator Voltage: -0.3000 to 3.6 volts
- Control Interface: Other
- Frequency Range: 20000 MHz
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Supplier: Oak-Mitsui Technologies - FaradFlex®
Description: capacitor with its vias, pad, and traces. By using Faradflex the device is etched into the copper and located in the substrate. It also provides a very short impedance path for the charge to the device from directly beneath it. Examples: Memory module substrates, Folded Stacked Die packages,
- Electrical Resistivity: 1.20E13 to 1.90E13 ohm-cm
- Features: Dielectric / Insulating
- Thickness: 3.15E-4 to 4.72E-4 inches
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Power Integrity Measurements with CMT VNAs and Picotest Accessories
signals, the magnitude of the impedance is not defined, and must be determined based on the circuit noise tolerance. The power distribution network (PDN) measurement includes the voltage regulator, printed circuit board planes and decoupling capacitors. Measuring capacitors, ferrite beads and the PDN
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Complete Wireless Design > Amplifier Design
… improve S 22 (but will degrade P1dB and IP3 somewhat; R S is also less important for low-frequency stability when R C 1 is used in circuit); C 3 and C 5 are the RF decoupling capacitors with an X C …
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Complete Wireless Design > EMI Control and Printed Circuit Board Layout
RF decoupling capacitors should be placed as close to active devices as possible, and then shunted to ground using a path of least impedance, which will always be multiple dedicated ground vias located at each decoupling component’s PCB pad.
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http://www.nxp.com/documents/application_note/AN11135.pdf
This is caused by the position of the RF de-coupling capacitors (C9, C12 and C14) relative to the RF choke (L1).
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A wide supply voltage and low-Rx noise Envelope tracking supply modulator IC for LTE handset power amplifiers
The FP1 is a pole due to a parasitic capacitance and an output resistance of the linear amplifier, FP2 is a pole due to RF decoupling capacitors , C1, C2, and the inductors, L1, L2, between the supply modulator output and the RF …
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Performance enhancement and evaluation of deep dry etching on a production cluster platform
The latter has led to a project demonstrator of a MOS RF decoupling capacitor with high capacitance density for mobile telecoms [18].
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http://www.nxp.com/documents/application_note/BGA2022_mixer.pdf
The supply should be well decoupled close to the MMIC, not only with a large-valued capacitor C7, but also with a smaller RF decoupling capacitor C8.
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http://www.nxp.com/documents/application_note/AN00059.pdf
The supply should be well decoupled close to the MMIC, not only with a large-valued capacitor C7, but also with a smaller RF decoupling capacitor C8.
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Combined control of drain video bandwidth and stability margins in power amplifiers for envelope tracking applications
Note that, as frequency increases the RF decoupling capacitors (CO2 and CD3 in Fig. 1) will provide a low impedance path to port D, which kills the observability of high frequency dynamics from that port.
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Signal Processors Based Upon GaAs ICs: The Need for a Wholistic Design Approach
… minimize this problem, special multi- layer circuit boards were designed that contained 12 power/ground planes to pro- vide multiple shunt paths for the flow of high-frequency return-path currents; in addition, every chip location was liberally supplied with RF decoupling capacitors .
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Effect of gate‐to‐source capacitance of high‐power Si‐LDMOS FET on the asymmetrical intermodulation and modulation bandwidth of base‐station amplifiers
A quarter-wave transmission line with RF decoupling capacitors is used for the DC bias circuit.