S8550 D331 Transistors

Description: TO-92 Bipolar (BJT) ROHS

Description: 25V 625mW 160@100mA,1V 800mA PNP TO-92-3 Bipolar Transistors - BJT ROHS

• I_C(max): 800 milliamps
• V_CEO: 25 volts
• f_T: 200 MHz
• P_D: 625 milliwatts

Description: Bipolar (BJT) Transistor PNP 25V 500mA 150MHz 625mW Through Hole TO-92

• Features: Other
• Polarity: PNP
• Package Type: TO-92

Description: Win Source Part Number: 1278659-S8550-D-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Box (TB) Standard Package: 2,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 500 mA

• Polarity: PNP
• Package Type: SOT3, TO-92

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 0.6A, 350mW, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 0.6A, 350mW, SOT-23, Bipolar Transistor, Single

• Transistor Type: Bipolar RF Transistors

Description: TRANS PNP 25V 0.1A TO92

• V_CEO: 25 volts
• I_C(max): 100 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: Manufacturer: STMicroelectronics Win Source Part Number: 322740-MMBT8550D Category: Discrete Semiconductor Products Family: Transistors(BJT) - Single Family Name: MMBT8550 D ECCN: EAR99 Country of Origin: China, China Estimated EOL Date: Unknown Is this a common-used part?: Yes Popularity:

Description: SEMICONDUCTOR, DEVICE TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N331

Description: Semiconductor, Device Transistor, PNP, Germanium, Low Power Type 2N331

Description: status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output

• Transistor Type: Bipolar RF Transistors

Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, Bipolar Transistor, Transistor, Photovoltaic Output

• I_C(max): 50 milliamps
• P_D: 200 milliwatts
• h_fe: 320
• T_J: -55 C

Description: Manufacturer: Bourns Inc. Win Source Part Number: 769950-BDW84D-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-218-3 Power - Max: 3.5W Transistor Type: PNP - Darlington Part Status: Obsolete(EOL) Family Name: BDW84D Categories:

• I_C(max): 1 milliamps
• T_J: -65 to 150 C
• Transistor Type: Darlington
• Features: Other, Shipping Tube / Stick Magazine

Description: Manufacturer: Bourns Inc. Win Source Part Number: 769948-BDW83D-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-218-3 Power - Max: 3.5W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: BDW83D Categories:

• I_C(max): 1 milliamps
• T_J: -65 to 150 C
• Transistor Type: Darlington
• Polarity: NPN

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5kv. Search-friendly keywords include transistor, BJT, switching, amplification, 5kv, Bipolar Transistor, Transistor, Photovoltaic Output

• I_C(max): 50 milliamps
• P_D: 200 milliwatts
• h_fe: 300
• Transistor Type: Bipolar RF Transistors

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

Description: TO 205 HV SILICON TRANSISTOR

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: Transistor Output Optocouplers Optocoupler 50% 5kv 4Pin SMT

Description: OPTOISOLTR 5KV TRANSISTOR 4-SMD

• T_J: -55 to 110 C
• Features: Other, Tape Reel

Description: SEMiX® offers users a high degree of flexibility in system configuration. Inverters, for instance, can be constructed either with compact sixpacks (SEMiX® 13/33c) or with thermally decoupled half bridges in the same family of housings. This can result in a better thermal spreading effect that can

• Transistor Type: IGBT
• Features: Other

Description: OPTOISOLATOR 5KV TRANSISTOR 4SMD

• Operating Temperature: -55 to 110 C

Description: Optoisolator Transistor Output 5000Vrms 1 Channel 4-SMD

• Isolation Voltage: 5,000 volts
• Rise Time: 4 µs
• Operating Temperature: -55 to 110 C
• Input: DC

Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

• Output Power: 40 watts
• Power Gain: 13 dB
• Operating Frequency: 1 to 500 MHz
• Transistor Type: MOSFET RF Transistors

Description: OPTOISOLATR 5KV TRANSISTOR 4-SMD

• Operating Temperature: -55 to 110 C

Description: MOSFET N-CH 30V 54A D2PAK

• V_(BR)DSS: 30 volts
• I_DSS: 54,000 milliamps
• Transistor Type: MOSFET
• Features: Other, Shipping Tube / Stick Magazine

Description: RCJ331N25 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

• V_(BR)DSS: 250 volts
• I_DSS: 33,000 milliamps
• Q_G: 80 nC
• P_D: 211,000 milliwatts

Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9

• Power Gain: 12 dB
• Output Power: 500 watts
• Operating Frequency: 2,700 to 2,900 MHz
• Transistor Type: MOSFET RF Transistors, Power BJT Transistors

Description: Part number ILD3135M180 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 180 watts of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The

• Power Gain: 11 dB
• Operating Frequency: 3,100 to 3,500 MHz
• Output Power: 180 watts
• Transistor Type: Bipolar RF Transistors

Description: TRANSISTOR, N-CHANNEL 4-V (D-S) MOSFET, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Description: 10mA 5mA 600V TO-252-2(DPAK) TRIACs ROHS

• V_DRM: 600 volts
• I_T(RMS): 4 amps
• I_GT: 5 mA
• V_GT: 1.5 volts

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N158

Description: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

• Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
• Polarity: NPN
• Features: Other, Tape Reel

Description: The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.

• Operating Temperature: -55 to 125 C
• Pin Count: 14
• Number of Units in the Chip: 1
• Flip-Flop Type: D

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428

Description: The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.

• Operating Temperature: -55 to 125 C
• Pin Count: 20
• Number of Units in the Chip: 1
• Flip-Flop Type: D