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Supplier: ODG (Origin Data Global)
Description: TO-92 Bipolar (BJT) ROHS
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Supplier: ODG (Origin Data Global)
Description: 25V 625mW 160@100mA,1V 800mA PNP TO-92-3 Bipolar (BJT) ROHS
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Supplier: ODG (Origin Data Global)
Description: 25V 625mW 160@100mA,1V 1.5A PNP SOT-89-3 Bipolar (BJT) ROHS
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Supplier: ODG (Origin Data Global)
Description: 25V 500mW 1.5A SOT-89 Bipolar (BJT) ROHS
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 625mW 160@100mA,1V 800mA PNP TO-92-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-92
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 625mW 160@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-236 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 25V 500mA 150MHz 625mW Through Hole TO-92
- Package Type: TO-92, Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 25V 500mA 150MHz 625mW Through Hole TO-92
- Package Type: TO-92, Other
- Polarity: PNP
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 450mW 160@100mA,1V 800mA PNP SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Through Hole TO-92
- Package Type: TO-92, Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 1W Through Hole TO-92
- Package Type: TO-92, Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 322740-MMBT8550D Category: Discrete Semiconductor Products Family: Transistors(BJT) - Single Family Name: MMBT8550 D ECCN: EAR99 Country of Origin: China, China Estimated EOL Date: Unknown Is this a
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1041224-8550SS-D-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Box (TB) Standard Package: 2,000 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector
- Package Type: TO-92, SOT3
- Polarity: PNP
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1278659-S8550-D-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Box (TB) Standard Package: 2,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current
- Package Type: TO-92, SOT3
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: TRANS PNP 25V 0.1A TO92
- Transistor Type: General Purpose BJT
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Supplier: Accuris
Description: SEMICONDUCTOR, DEVICE TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N331
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: Accuris
Description: Semiconductor, Device Transistor, PNP, Germanium, Low Power Type 2N331
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, SC-74
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Transistor for low frequency small-signal amplification
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Transistor for low frequency small-signal amplification
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Integra Technologies, Inc.
Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 400
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Radwell International
Description: TRANSISTOR, N-CHANNEL 4-V (D-S) MOSFET, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770176-BLF881S,112 Packaging: Tube Package: SOT467B Frequency: 860MHz Current - Test: 500mA Gain: 21dB Transistor Type: LDMOS Voltage - Test: 50V Power - Output: 140W Family Name: BLF881S
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
- Package Type: Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: RCJ331N25 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
- Package Type: TO-263, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Description: TO 205 HV SILICON TRANSISTOR
- Transistor Type: General Purpose BJT
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Description: Integrated Circuits (ICs) - Transistors - MOSFETs
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: Part number ILD2731M30 is designed for S-Band radar applications operating over the 2.7-3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30 watts of peak output power with well over 10dB gain. Since it operates under Class B or AB
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 10dB gain typically. Specified operation is with Class AB
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 2 W (33 dBm) in a plastic package. The MAGX-100027-002S0P is ideally suited
- Package Type: Other
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Supplier: Lansdale Semiconductor, Inc.
Description: The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.
- IC Package Type: DIP
- Logic Family: Transistor-Transistor Logic (TTL)
- Number of Units in the Chip: 1
- Operating Temperature: -55 to 125 C
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