Products/Services for Spice Model Germanium Transistor
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Diodes - (1068 companies)Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators...Diode TypeDiode ApplicationsRoHS Compliant -
Transistors - (919 companies)...codes describe leaded devices and SOTxxx case codes describe surface mounted devices. Material - Transistors are most commonly composed of one of two semi-conductive materials: silicon or germanium. Specific levels of impurities (dopants) are added... -
Modeling and Simulation Software - (521 companies)Modeling and simulation software is used to model and simulate a system or process for the purposes of testing or calibration. It is used in a wide variety of industrial processes and is applied in conjunction with physical simulation systems... -
RF Transistors - (315 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices... -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
RF MOSFET Transistors - (92 companies)...as miniature electronic switches. Like other semiconductor devices, MOSFET RF transistors are made of materials such as silicon (Si) or germanium (Ge) and doped with impurities to induce changes in electrical properties. Voltage is applied between...
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Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters...
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Small-Signal Bipolar Transistors (BJT) - (157 companies)...layers of P-type material. Images credit: Wikimedia. Or, if nominated by material, the BJT would be called a silicon transistor, germanium transistor, etc. Specifications. The following parameters are important when considering bipolar junction...
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Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
Product News
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Avantier Inc.
Germanium Lenses Our germanium lenses also come with BBAR (broadband anti-reflection) coatings, which further enhance their performance, particularly in the desired wavelength range of 3-12 mm. These coatings maximize light transmission, reaching up to 95% in some cases. Incorporating germanium transmits, which is a unique characteristic of this material, these lenses excel in mid-infrared light applications. The inclusion of AR coatings further boosts their transmission capabilities, allowing for superior... (read more)Browse Aspheric Lenses Datasheets for Avantier Inc. -
Avantier Inc.
Germanium Windows Germanium windows have become the avant-garde choice for advanced optical applications, particularly in the infrared (IR) spectrum. Their exceptional properties offer a plethora of advantages that make them highly sought after for rugged environments: Broad Transmission Range in Infrared (IR) Spectrum: Germanium windows boast unparalleled transparency to infrared wavelengths, spanning from 2 um to 14 um. This unique characteristic makes them suitable for IR laser applications, facilitating... (read more)Browse Optical Windows Datasheets for Avantier Inc. -
Avantier Inc.
Germanium Optical Domes Advantages of Germanium Optical Domes. Broad IR Transmission Range: Germanium Optical Domes offer high transparency in the IR spectrum, making them ideal for thermal imaging, IR spectroscopy, and other applications requiring the capture of IR radiation. Excellent Optical Clarity: Germanium has low dispersion, resulting in minimal chromatic aberrations, ensuring consistent optical quality across the entire IR wavelength range. Robustness and Durability: Germanium 's exceptional hardness allows... (read more)Browse Optical Lenses Datasheets for Avantier Inc. -
Avantier Inc.
Infrared Germanium Aspheric Lenses Infrared Germanium Aspheric Lenses represent a powerful combination of Germanium 's infrared transmission capabilities and aspheric lens design 's optical precision. These lenses have revolutionized IR applications, enabling high-performance imaging, sensing, and spectroscopy in various industries. With their ability to correct aberrations and deliver exceptional image quality, Infrared Germanium Aspheric Lenses continue to advance the frontiers of infrared technology and facilitate... (read more)Browse Aspheric Lenses Datasheets for Avantier Inc. -
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® America Corp.
Sarcon® TIM Cases for Cooler Transistors In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly (R) offers a large assortment of box-shaped Sarcon (R) thermal interface caps. These cases are available in standard sizes to fit many transistors and can be custom ordered to your exact specifications. Installation takes seconds by sliding over the heat-generating component. Once fitted, unwanted heat is dissipated to the surrounding environment or nearby heatsinks. Depending on the power and cooling... (read more)Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
LIXINC Electronics Co., Limited
Microchip 2N2907AUB PNP Bipolar Transistor The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to meet the needs of engineers working on a wide range of designs. Its compact 3-SMD package makes it well-suited for space-constrained environments, providing engineers with an easy-to-integrate solution for both low and medium-power... (read more) -
LIXINC Electronics Co., Limited
2N2907AUB High-Current PNP Transistor The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities... (read more) -
Rochester Electronics
Authorized Source: IGBT, MOSFETs, Transistors All of Rochester 's in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, onsemi, Renesas, and many more. Additionally, we stock a large selection of power management, diodes, and protection devices that are commonly used within these same designs. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics
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Modeling 20-nm Germanium FinFET With the Industry Standard FinFET Model
Abstract—In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model.
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Single Grain TFTs for High Speed Flexible Electronics :: TU Delft Institutional Repository
single-grain silicon thin-film transistors (TFTs) · μ-Czoshralski process · DC-RF SPICE model · electronic paper · high-voltage single-grain silicon TFTs · location-controlled germanium grains · single-grain germanium TFTs · tensile strain silicon · TFTs…
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SPICE data base for neutron (1 MeV) radiation hardening design: permanent damage effects simulation of bipolar transistors
[l] G.C. Messenger, J.P. Spratt, "The effects of neutron irradiation on germanium and silicon", Proc. IRE, V01.46 … Wirth, "Neutron radiation damage in silicon transistors ", Nuclear Sciences, pp … G. Massobrio,"Semiconductor device modeling with SPICE ", McGraw-Hill, 1988…
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Restabilizing mechanisms after the onset of thermal instability in bipolar transistors
The models are supported by measure- ments on silicon-on-glass n-p-n bipolar junction transistors and by simulation results from a novel SPICE -based electrothermal macromodel for bipolar transistors. .... Furthermore, the models are employed to analyze the influence of the germanium percentage in the base of…
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A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs
Abstract— A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBT’s), which are components of a commercially available BiCMOS technology for high-frequency applications. .... The SPICE Gum- mel–Poon (SGP) model parameters are scaled, and statistics added, using language features built into…
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Noise Characteristics of 0.5 ¿m/50 GHz Si and 0.5 ¿m/70 GHz SiGe Bipolar Technologies
In the case of the SiGe transistors there is no need for such an oxide because the collector current is increased due to the germanium content and this already gives sufficient current gain. .... SIb is included in the usual compact models for bipolar transistors in nearly all circuit simulators, e.g. in the Spice Gummel Poon model used in this work.
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Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base
The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). .... model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing…
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2009 Index IEEE Transactions on Electron Devices Vol. 56
Nassar, C. J., +, TED Sept. 2009 1974-1979 SPICE Optimization of Organic FET Models Using Charge Transport Ele- ments. .... Ge =Si Band-to-Band Tunneling Transistors : Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior.
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2013 Index IEEE Transactions on Nanotechnology Vol. 12
Field effect transistors . .... A Dual-Gate Graphene FET Model for Circuit Simulation— SPICE Imple- mentation. .... of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctu- ations (RDF) on Germanium -Source Tunnel FET…
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Modeling of power semiconductor devices, problems, limitations and future trends
Antognetti and G. Massobrio, “Semiconductor device modeling with SPICE , “ McGraw-Hill,New York, 1987 W. van Roosbroek, “Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors,’’Bell … and B. Meinerzhagen, “Device modeling ,“ Proceedings of the … “ Springer-VerlagWien NewYork, 1986 H.C. de Graaffand F.M. Klaassen,“Compct Transistor Modelling for Circuit…
