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Supplier: Newark, An Avnet Company
Description: AUDIO POWER TRANSISTOR, PNP, -80V, TO-66; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:25W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:-RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: Germanium PNP Transistor Audio Frequency Power Amplifier The NTE121 is a germanium PNP alloy junction transistor in a TO3 type package designed as an audio frequency power output amplifier.
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Supplier: Allied Electronics, Inc.
Description: Silicon Power Transistor High Power Audio Amplifiers
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Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistor Audio Power Amplifier, PNP Transistor Type +150 °C maximum operating temperature Designed for use in high power, high fidelity audio frequency amplifier applications.
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Supplier: Allied Electronics, Inc.
Description: Germanium PNP Transistor Audio Power Amplifier, High Current Switch Low Collector-Emitter Saturation Voltage: VCE (sat) == 0.5V (Max) @ IC == 5 A The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high-current switching applications
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AUDIO, PNP, 230V,15A, TO3PL; Transistor Polarity:PNP; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANS,AUDIO,NPN,230V,18A,TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:18A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:60MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANS,AUDIO,PNP,230V,18A,TO-3P; Transistor Polarity:PNP; Collector Emitter Voltage Max:230V; Continuous Collector Current:18A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:35MHz RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: UM2222AU3 is bipolar transistor for audio frequency small signal amplifier.
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: ROHM Semiconductor GmbH
Description: UMT4403U3 is a transistor for audio frequency small signal amplifier. Complementary is the SST4401/UMT4401U3
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: Richardson RFPD
Description: Bridge Driver 60A continuous current capability Zero reverse recovery charge Ultra-low on resistance Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated) Reduced Gate Loop Inductance Reduced Power Loop Inductance Easy for power stage layout
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: UMT4403U3HZG is a transistor for audio frequency small signal amplifier. Complementary is the UMT4401U3 HZG
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: UMT4401U3HZG is a transistor for audio frequency small signal amplifier. Complementary is the UMT4403U3 HZG
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 64 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Motor Drive & Control, Audio
- V(BR)DSS: 100 volts
- PD: 85,000 milliwatts
- TJ: -55 to 175 C
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204927-HUFA75545P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V
- V(BR)DSS: 80 volts
- PD: 270,000 milliwatts
- TJ: -55 to 175 C
- Transistor Type: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Audio Frequency Amplifier Applications / Trans JFET P-CH 3mA Si 3-Pin USM Product overview: 2SJ144-Y from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: TRANSISTOR AUDIO POWER AMP 3PIN. FREE 2 YEAR RADWELL WARRANTY
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Supplier: RS Components, Ltd.
Description: Transistor NPN 250V 1A 40W Audio TO220AB
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1102869-STD27N3LH5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status:
- V(BR)DSS: 30 volts
- PD: 30,000 milliwatts
- TJ: -55 to 175 C
- Transistor Type: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC AUDIO CODEC 8CH HD 3.3V 48QFP / Audio, HD Interface 24 b 48-TQFP (7x7) Product overview: IDTSTAC9228X3TAEB4X from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing.
- TJ: 0 to 70 C
- Transistor Type: IGBT
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1102293-SSM3K15ACTC,L3F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- V(BR)DSS: 30 volts
- PD: 500 milliwatts
- TJ: 150 C
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: rise/fall time High power density at 1MHz+ fSW operation High efficiency for 48V board power Applications 48 V Step Down Converters CPU/GPU/DDR High-performance Class D Audio systems Forward Converter, ZVS, Buck/Boost topologies
- Category: Development Board
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Supplier: Infineon Technologies AG
Description: The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 150W Audio Transistor, TO-247, 30-TUBE Product overview: MJW0302AG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing
- IC(max): 0.01 milliamps
- VCEO: 260 volts
- VCBO: 260 volts
- fT: 30 MHz
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Supplier: Infineon Technologies AG
Description: The REF_Audio_GaNb_750W features CoolGaN™ Transistors 100 V G3 combined with the MERUS™ IRS20957SPBF Class D audio driver. The design demonstrates the superior power density and audio performance of CoolGaN™. This two-channel design is scalable up to 375 W x 2ch at 2 Ω
- Category: Development Board
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Supplier: Infineon Technologies AG
Description: Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power
- rDS(on): 0.0122 ohms
- TJ: -55 to 175 C
- VGS(off): 2 to 3.5 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Nexperia B.V.
Description: transistors on same PCB area Reduced required PCB area Reduced pick and place costs. Applications General purpose switching and amplification Complementary MOSFET driver for switch mode power supply Complementary driver for audio amplifiers.
- hfe: 120
- VCEO: 40 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: NPN/PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD)plastic package. Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self alignment during soldering due to straight leads Low collector
- Polarity: Complementary
- Features: Other
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Supplier: Visual Sound, Inc.
Description: Bogen Communications, Inc. The Bogen HTA250A Power Amplifier is a high performance unit employing Power MOSFET technology. The unique characteristics of Power MOSFETS make them ideally suited to power amplifier design, providing far superior performance and reliability
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Supplier: Visual Sound, Inc.
Description: zone when the volume control on the preamp is set to maximum. This would act as a volume limiter for any particular zone. Each pair of amplifiers can be bridged to allow several channel and power output capabilities. It can be configured into four power packages as follows: Six 40-watt
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Description: Low Power AVR32 32-Bit Microcontroller Ethernet 10/100 Mbit/s coming soon! Audio Out +5 Volt Powered USB Powered optional (+3.3V Optional) Removable Mounting Tabs
- Technology: AMLCD, Thin Film Transistor (TFT)
- Features / Applications: Built-in Controller, Computer Applications
- Display Type: Graphic Display
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Supplier: ROHM Semiconductor USA, LLC
Description: 400V 20A N-channel SiC power MOSFET for Audio
- V(BR)DSS: 400 volts
- IDSS: 20,000 milliamps
- rDS(on): 0.12 ohms
- PD: 132,000 milliwatts
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Supplier: Nexperia B.V.
Description: capability No body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm Applications High power density and high
- Transistor Grade / Operating Range: Automotive
- Features: Other
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Supplier: 4D Systems Pty. Ltd.
Description: include; a 4.3" TFT 480x272 touch screen display, audio, micro-SD card connector, an expansion port along with a series of GPIO, I2C, SPI, and UART serial comms. The uLCD-43D/DT/DCT serves as the perfect solution to be deployed at the forefront of any product design, requiring a brilliance of
- Display Type: Graphic Display
- Technology: Thin Film Transistor (TFT)
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NTE Electronics, Inc. - NTE121 - Transistors & Modules - Bipolar Transistors - Allied Electronics
The NTE121 is a germanium PNP alloy junction transistor in a TO3 type package designed as an audio frequency power output amplifier.
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NTE Electronics, Inc. - NTE386 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon NPN Transistor Audio Power Amp, Switch, 175 W Power Dissipation The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage …
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NTE NTE280 Series Datasheets. NTE280, NTE281 Datasheet.
Silicon complementary NPN transistor . Audio power amplifier. in 2-pin TO3 package.
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te28 datasheet : Datasheets for Electronic Components and Semiconductors
Silicon complementary NPN transistor . Audio power amplifier. TO3 .
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NTE NTE29 Series Datasheets. NTE297, NTE2941, NTE2968, NTE2970, NTE2934, NTE2956, NTE2986, NTE2924, NTE2946, NTE292, NTE299, NTE2954, NTE289A, NTE2989, NTE2944...
Audio power amplifier. in 3-pin -- package. Silicon complementary NPN transistor . High power, high current switch. in 2-pin TO3 package.
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Page 6. Semiconductor parts with 656 in root number
Camera Image Processor with ADPCM / MIDI / MP3 / AAC / HE-AAC Audio 325V Vcbo, 500mA Ic Low frequency power silicon NPN transistor Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
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Page 6. Semiconductor parts with 028 in root number
Bipolar Power TO3 NPN 50A 60V 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS 180W 260V NPN Audio Transistor .
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NTE87 datasheet - Silicon complementary NPN transistor. High power audio, disk head positioner for linear applications. : Datasheets for Electronic Components ...
Silicon complementary NPN transistor . High power audio , disk head positioner for linear applications. TO3 .
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NTE219 datasheet - Silicon power PNP transistor. Audio power amplifier, medium speed switch. : Datasheets for Electronic Components and Semiconductors
Silicon power PNP transistor . Audio power amplifier, medium speed switch. TO3 .
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Page 3. Semiconductor parts with 871 in root number
Audio Sound Processor for home audio 850V Vcbo, 25A Ic Low frequency power silicon NPN transistor Bipolar PNP Device in a Hermetically sealed TO3 Metal Package .