Transistors Equivalent

Description: Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz, Measurement of

Description: The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, 1A, 80V, 1-ELEMENT, TRANSISTORS, 2SB1025 EQUIVALENT. FREE 2 YEAR RADWELL WARRANTY

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 1.945GHz Center Frequency Stability: ±20ppm @ 25°C

• Package Type: SOT3

Description: Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Packaging: Bulk Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 6.3V ESR (Equivalent Series Resistance): 100mOhm @ 100kHz Lifetime @

• Package Type: SOT3

Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 860 ~ 960MHz Frequency Stability: ±10ppm

• Package Type: SOT3

Description: Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent Series Resistance): 5mOhm Lifetime @

• Package Type: SOT3

Description: 8-Pin DIP 1Mbit/s Dual-Channel High Speed Transistor Output Optocoupler (Not recommend for new design. The new equivalent part number is HCPL253xM), 1000-REEL Product overview: HCPL2530SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages,

• P_D: 0.1 milliwatts
• T_J: 0 C
• Transistor Type: Bipolar RF Transistors

Description: PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B Features and benefits Current gain matching AEC-Q101 qualified Applications Current mirror Differential amplifier

• Features: Other
• Polarity: PNP
• Package Type: SOT143

Description: NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV61. PNP/PNP equivalent: BCM62B Features and benefits Current gain matching AEC-Q101 qualified Applications Current mirror Differential amplifier

• Polarity: NPN
• Features: Other
• Package Type: SOT143

Description: 1.1 This test method covers how 2N2222A silicon bipolar transistors can be used either as dosimetry sensors in the determination of neutron energy spectra, or as silicon 1-MeV equivalent displacement damage fluence monitors.

Description: between input and output. Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional photo-transistor coupler by reducing the base-collector capacitance. The ACPL-K43T and ACPL-K44T IPM optocoupler

• Isolation Voltage: 1,140 volts
• Operating Temperature: -40 to 125 C
• Input: DC
• Features: Other

Description: The SY89222L is a dual TTL-to-differential LVPECL translator with a +3.3V power supply. Because LVPECL (Positive ECL) levels are used, only +3.3V and ground are required. The SY89222L is functionally equivalent to the SY100ELT22L but in an ultra-small 8-lead MLF™ package that features a 70%

• Input Voltage: 3.3 volts
• Translation Voltage (Output): 3.3 volts
• Propagation Delay: 0.6 ns
• Operating Current: 25 mA

Description: The LS320 Single, Monolithic high Input Impedance, BIFET Amplifier is a direct replacement for Amperex equivalent part. It is ideal for High Impedance Sense Amplifier Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing to

• Features: Other

Description: The 72V831is a 2K x 9 dual synchronous FIFO that is functionally equivalent to two 72V231 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for

• Density: 18 kbits
• Number of Words: 2 k
• Data Rate: 66 MHz
• Operating Temperature: -40 to 85 C

Description: The 72825 is a 1K x 18 First-In, First-Out memory with clocked read and write controls. It is functionally equivalent to two 72225 FIFOs in a single package with all associated control, data, and flag lines assigned to independent pins and would be applicable for a wide variety of data

• Density: 18 kbits
• Number of Words: 1 k
• Data Rate: 66 MHz
• Operating Temperature: -40 to 85 C

Description: The 72805 is a 256 x 18 First-In, First-Out memory with clocked read and write controls. It is functionally equivalent to two 72205 FIFOs in a single package with all associated control, data, and flag lines assigned to independent pins and would be applicable for a wide variety of data

• Density: 4 kbits
• Data Rate: 66 MHz
• Operating Temperature: -40 to 85 C
• Pin Count: 128

Description: The 72V851is a 8K x 9 dual synchronous FIFO that is functionally equivalent to two 72V251 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for

• Density: 72 kbits
• Number of Words: 8 k
• Data Rate: 66 MHz
• Operating Temperature: -40 to 85 C

Description: • 2.4"(diagonal), 320 x RGB x 240dots, 262k colors, Transmissive, TFT LCD module. • Viewing Direction: 6'clock. • Driving IC: ILI9341 or equivalent TFT controller/driver. • 16-bits data bus (I80 system interface). • Logic voltage: 2.8V (typ.). • Without Touch panel.

• Technology: AMLCD, Thin Film Transistor (TFT)
• Display Type: Graphic Display

Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to

• Features: Other
• Polarity: P-Channel
• Package Type: TO-247

Description: standard and screened versions. Features: · High Reliability · Base lead provided for conventional transistor biasing · Very high gain, high voltage transistor · Stability over wide temperature range. · High voltage electrical isolation

• Isolation Voltage: 1,000 volts
• Rise Time: 15 µs
• Collector Emitter Breakdown Voltage: 40 volts
• Operating Temperature: -55 to 125 C

Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to

• Features: Other
• Polarity: P-Channel

Description: The LS/PF/SST5301 Series Single, High Input Impedance, N-Channel JFET Amplifier is a direct replacement for the Fairchild equivalent part. It is ideal for Very High Input Impedance Applications. Available in TO-92 3L RoHS, TO-72 4L RoHS, SOT-23 3L RoHS and Tested Die. All Linear Systems

• Transistor Type: JFET
• Polarity: N-Channel
• Features: Other
• Package Type: SOT23, TO-92

Description: The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Capacitance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices are available

• Transistor Type: JFET
• Features: Other
• Polarity: P-Channel

Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,

Description: extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a

Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,

Description: in an industry standard form factor Highest current rated topologies versus market equivalents Built in NTC Press fit connections Benefits Ease of layout and assembly System scalability and reliability Applications EV Fast Charging Industrial Power UPS Induction Heating Welding Industrial

• Transistor Type: MOSFET
• Features: Other

Description: The HCPL-253L diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: 0 to 70 C
• Input: DC

Description: by and backed by B&K Precision, a company that has been selling reliable, durable, value priced test instruments for over 60 years. Delayed sweep in 23 steps Built in component tester for capacitors, inductors, diodes, transistors, zener diodes 23 step time base to 0.1ms/div Deluxe

• Bandwidth: 30 MHz

Description: MHz 2 Channels Built-in component tester for capacitors, inductors, diodes, transistors, zener diodes Dual or single trace operation 5 mV/div sensitivity Compact low profile design Calibrated 23-step time base with X10 magnifier Video sync trigger Alternate/chop sweep Sum and difference

• Bandwidth: 30 MHz
• Number of Input Channels: 2 (# channels)

Description: for high-current applications. The TOLL package is the perfect solution for high power density applications that benefit from 30 percent smaller footprint compared to D2PAK 7-pin and lower package inductances. Summary of Features Low RDS(on) in compact package, 16% lower than the equivalent

• r_DS(on): 0.003 ohms
• T_J: -55 to 175 C
• V_GS(off): 2 to 4 volts
• Transistor Type: MOSFET, Power MOSFET

Description: provides background information and recommendations on gamma-ray testing of electronics using nuclear reactors. 1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes.

Description: the simulated battery Compute battery capacity in Amp-Hour and Equivalent Series Resistance (ESR) Program the battery SOC, Voc, capacity, and resistance Provide two modes of simulation–dynamic and static Monitor charge/discharge current and voltage Output up to 120W of low noise, linear

• DC Output Power: 119.9999999999997 watts
• Type: DC Power Supply

Description: predominantly in series, as is the case with most junction capacitance measurements, the capacitance indicated is also essentially the same as the equivalent series capacitance value, provided that the series loss does not result in a Q value below 10. The Boonton 72BD is recommended for most