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Supplier: Accuris
Description: Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz, Measurement of
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Supplier: Accuris
Description: The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz
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Supplier: Radwell International
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, 1A, 80V, 1-ELEMENT, TRANSISTORS, 2SB1025 EQUIVALENT. FREE 2 YEAR RADWELL WARRANTY
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Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF TransistorsSupplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 700MHz ~ 2GHz
- Package Type: SOT3
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Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF TransistorsSupplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Frequency: 1.945GHz Center Frequency
- Package Type: SOT3
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Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF TransistorsSupplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Capacitance: 0.22µF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent Series
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Packaging: Bulk Part Status: Obsolete Capacitance: 0.22µF Tolerance: ±20% Voltage - Rated: 6.3V ESR (Equivalent Series Resistance): 100m
- Package Type: SOT3
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Supplier: Nexperia B.V.
Description: NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV61. PNP/PNP equivalent: BCM62B Features and benefits Current gain matching AEC-Q101 qualified Applications Current mirror Differential amplifier
- Package Type: SOT143, Other
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD) plastic package. Matched version of BCV62. NPN/NPN equivalent: BCM61B Features and benefits Current gain matching AEC-Q101 qualified Applications Current mirror Differential amplifier
- Package Type: SOT143, Other
- Polarity: PNP
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Supplier: Richardson RFPD
Description: The GS66504B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX™
- Package Type: Other
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Supplier: Linear Systems
Description: The LS320 Single, Monolithic high Input Impedance, BIFET Amplifier is a direct replacement for Amperex equivalent part. It is ideal for High Impedance Sense Amplifier Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing to
- Package Type: Other
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Supplier: Linear Systems
Description: The 3N190 Series Monolithic-Duel, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-78 7L RoHS and Tested Die. All Linear Systems devices are available with special
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The J/SST201 Series Single, Low Noise, High Gain, N-Channel JFET Amplifier is a direct replacement for the Fairchild, NXP, and Siliconix-Vishay equivalent part. It is ideal for High Gain, Low Noise Applications. Available in TO-92 3L ROHS, SOT-23 3L ROHS, and Tested Die. All Linear Systems
- Package Type: TO-92, SOT23
- Polarity: N-Channel
- Transistor Type: JFET
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Supplier: Linear Systems
Description: The 174DFN Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Fairchild and Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Operating Current Switching Applications. Available TO-92 3L ROHS and SOT-23 3L ROHS package, as well as Tested Die. All
- Package Type: TO-92, SOT23
- Polarity: P-Channel
- Transistor Type: JFET
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Supplier: Microchip Technology, Inc.
Description: The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available. Additional Features
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Supplier: Integrated Device Technology
Description: The 72V851is a 8K x 9 dual synchronous FIFO that is functionally equivalent to two 72V251 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for
- Data Rate: 66 MHz
- Density: 72 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72V821is a 1K x 9 dual synchronous FIFO that is functionally equivalent to two 72V221 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for
- Data Rate: 50 MHz
- Density: 9 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72V811is a 512 x 9 dual synchronous FIFO that is functionally equivalent to two 72V211 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock
- Data Rate: 100 MHz
- Density: 4 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Integrated Device Technology
Description: The 72V831is a 2K x 9 dual synchronous FIFO that is functionally equivalent to two 72V231 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write Clock for
- Data Rate: 66 MHz
- Density: 18 kbits
- IC Package Type: TQFP
- Logic Family: Transistor-Transistor Logic (TTL)
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Supplier: Microchip Technology, Inc.
Description: The SY89222L is a dual TTL-to-differential LVPECL translator with a +3.3V power supply. Because LVPECL (Positive ECL) levels are used, only +3.3V and ground are required. The SY89222L is functionally equivalent to the SY100ELT22L but in an ultra-small 8-lead MLF™ package that features a 70
- Input Voltage: 3.3 volts
- Logic Family: Transistor-Transistor Logic (TTL), PECL
- Operating Current: 25 mA
- Package: Other
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Supplier: Richardson RFPD
Description: Leading silicon carbide MOSFET technology in an industry standard form factor Highest current rated topologies versus market equivalents Built in NTC Press fit connections Benefits Ease of layout and assembly System scalability and
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to
- Package Type: Other
- Polarity: P-Channel
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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to
- Package Type: TO-247, Other
- Polarity: P-Channel
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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to
- Package Type: TO-247, Other
- Polarity: P-Channel
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Supplier: Littelfuse, Inc.
Description: P-Channel Standard Power MOSFETs are available in voltage rating from -100V to -600V in industry-popular TO-247 and surface mountable TO-268 packages. They are ideal for Buck Converters and for loads that need to be connected to ground. They can pair-up with equivalent N-Channel MOSFETs to
- Package Type: TO-247, Other
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency
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Supplier: Infineon Technologies AG
Description: Low RDS(on) in compact package, 16% lower than the equivalent D2PAK 7-pin part 60% smaller package than D2PAK 7-pin Ideal for 72 V battery powered equipment, where 150 V MOSFETs are not needed Benefits High
- Package Type: Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: ASTM International
Description: 1.1 This test method covers how 2N2222A silicon bipolar transistors can be used either as dosimetry sensors in the determination of neutron energy spectra, or as silicon 1-MeV equivalent displacement damage fluence monitors.
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Supplier: AMP Display Inc.
Description: x 2.8"(diagonal), 240 x RGB x 320 dots, 262k colors, Transmissive, TFT LCD module. x Viewing Direction: 6'clock. x Driving IC: ILI9341 or equivalent TFT controller/driver. x 16-bits data bus (I80 system interface). x Logic voltage: 2.8V (typ.). x Touch panel.
- Display Type: Graphic Display
- Technology: AMLCD, Thin Film Transistor (TFT)
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Supplier: Broadcom Inc.
Description: The ACPL-K43T is a single channel, high temperature, high CMR, high-speed digital automotive IPM optocoupler in an eight lead miniature footprint. specifically used in the automotive applications. The ACPL-K44T is a dual channel equivalent of the ACPL-K43T. Both products are available in
- Isolation Voltage: 1140 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 125 C
- Optocoupler Input: DC
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Supplier: Transcat, Inc.
Description: oscilloscope is built by and backed by B&K Precision, a company that has been selling reliable, durable, value priced test instruments for over 60 years. Delayed sweep in 23 steps Built in component tester for capacitors, inductors, diodes, transistors, zener diodes
- Bandwidth: 30 MHz
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Supplier: Micropac Industries, Inc.
Description: The 66177 single channel optocoupler consists of an LED optically coupled to a high gain silicon phototransistor. The 66177 is electrically equivalent to the 4N47 (-X01), 4N48 (-X02) and the 4N49 (-X03), but is screened to MIL-PRF-38534 which includes high temperature testing at +125°C.
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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Supplier: ValueTronics International, Inc.
Description: Features: Bandwidth: 30 MHz 2 Channels Built-in component tester for capacitors, inductors, diodes, transistors, zener diodes Dual or single trace operation 5 mV/div sensitivity Compact low profile design Calibrated 23-step time base with X
- Bandwidth: 30 MHz
- Number of Input Channels: 2 (# channels)
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Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
Both the PS9552 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large peak output current, fast switching speeds, undervoltage lockout protection
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Commentary & analysis of week's chip news, Aug. 13-17 Siliconix says new MOSFETs offer half the on-resistance of other devices SANTA CLARA, Calif. -- Siliconix Inc. today announced it has set a new record for low on-resistance in 16- and 20-volt field-effect transistors (FETs). Siliconix said its
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Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
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Volume and Velocity are Driving Advances in Data Center Network Technology
Just about everyone, and certainly every engineer, has heard of Moore's Law, in which Gordon Moore predicted that technological advances would lead to a doubling of the number of transistors on a chip approximately every two years. Fewer people have heard of its networking equivalent, Metcalfe's
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Heteromagnetic Microelectronics
… equivalent parameters, 237 KT962B transistor, 241–242 MPSA92 transistor, 241, 242 optimization algorithm, 237, 240–241 parameters, 239 programs, 238–239 static characteristics, 237, 239–240 system requirement, 238 power amplifier equivalent circuit, 309 parameter calculation, 310 powerful bipolar heteromagnetic transistor equivalent circuit, 264, 265 frequency …
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RF and Microwave Transistor Oscillator Design
In this case, the basic parameters of the transistor equivalent circuit can be directly measured, or approximated on the basis of experimental data, with sufficient accuracy across a wide frequency range.
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Structured Analog CMOS Design
Figure 2.7 Small-signal MOS transistor equivalent scheme with transconductances .
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Digital Integrated Circuit Design
The load transistor width should be no greater than the smallest width of an n-channel tran- sistor equivalent to the n-channel drive network when it is conducting similar to the size ratio shown in Fig. 9.1a.
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A modeling technique for CMOS gates
(a) Complete transistor chain, (b) two transistor equivalent circuit, and (c) single equivalent transistor model.
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Microwave Circuit Design Using Linear and Nonlinear Techniques 2nd Edition Complete Document
Other bipolar transistor equivalent circuits are given in Figure 3.60, including the distributed hybrid- , the simplified hybrid- , and the simplified T-equivalent circuit.
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
We know from our discussion of large-signal bipolar transistor equivalent circuit models that the base-emitter voltage is inevitably about 0.6 V.
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Modeling the transistor chain operation in CMOS gates for short channel devices
(a) Complete transistor chain and (b) two- transistor equivalent chain.
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Collapsing the CMOS transistor chain to an effective single equivalent transistor
U Complete chain b Two transistor equivalent c Single transistor equivalent .
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Collapsing the transistor chain to an effective single equivalent transistor
I: (a) Cnmplcte transistor chain, (b) two transistor equivalent circuit and (c) single equivalent transistor model .