Products/Services for Trw RF Transistors
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RF Transistors - (315 companies)Last revised: December 5, 2024 Reviewed by: Scott Orlosky, consulting engineer RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers Radio transmitters Television monitors Like...Transistor TypePolarityTransistor Grade / Operating Range -
Transistors - (919 companies)Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Transistors are small, versatile semiconductor devices designed to switch or amplify electronic signals and power. Almost all... -
Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters... -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
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RF Amplifiers - (609 companies)RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. RF amplifiers are electronic devices that accept a varying input signal and produce an output signal...
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RF Transmitters - (313 companies)...modern transmitters use transistors or tubes. This circuitry creates an oscillating RF signal at a specific frequency or range that is carried to an antenna which is tuned to match the frequency. Selecting RF Transmitters. RF transmitters carry...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
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Small-Signal Bipolar Transistors (BJT) - (157 companies)Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Small signal bipolar junction...
Product News
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Qorvo
40W, DC-6GHz, GaN on SiC RF Transistors The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)Browse Transistors Datasheets for Qorvo -
Qorvo
15W, 30-1200 MHz, GaN RF Input-Matched Transistor QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
25W, 30-1200 MHz, GaN RF Input-Matched Transistor QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
7W 30-1200 MHz, GaN RF Input-Matched Transistor QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
300W, 1-1.5 GHz, GaN on SiC RF Transistor The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available... (read more)Browse RF Transistors Datasheets for Qorvo -
LIXINC Electronics Co., Limited
Microchip 2N2907AUB PNP Bipolar Transistor applications. This versatile transistor excels in high-temperature environments with a junction temperature range from -65 C to 200 C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with professional engineers in mind, the 2N2907AUB helps simplify design processes, offering robust performance in a space-saving package. Key Features: Polarity: PNP. Package Type: 3-SMD, No Lead... (read more) -
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® America Corp.
Sarcon® TIM Cases for Cooler Transistors In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly (R) offers a large assortment of box-shaped Sarcon (R) thermal interface caps. These cases are available in standard sizes to fit many transistors and can be custom ordered to your exact specifications. Installation takes seconds by sliding over the heat-generating component. Once fitted, unwanted heat is dissipated to the surrounding environment or nearby heatsinks. Depending on the power and cooling... (read more)Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
LIXINC Electronics Co., Limited
2N2907AUB High-Current PNP Transistor The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities... (read more)
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Effects of Fast Temperature Cycling on Aluminum and Gold Metal Systems
Temperature stressed life tests under rf conditions on microwave power transistors at TRW , MSC' and GE2 have been valuable, both from the point of view of establish- ing estimated MTF at realistic temperatures and in eluc- idating the failure mechanisms.
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BITPAR: process-derived bipolar transistor parameterization
The most comprehensive re- sults to date have been compiled at the TRW Microelec- tronics Center where six wide-band RF and IF amplifiers fabricated earlier in the nominally 5-GHz oxide aligned transistor process [32] were simulated on SPICE with BITPAR …
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A 155-GHz monolithic low-noise amplifier
In July 1995, he joined the TRW RF Product Center, Redondo Beach, CA, where his work has focused on the design and testing of MMIC’s and subsystems based on submicron GaAs and InP HEMT/heterojunction bipolar transistor (HBT) technologies.
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Table of contents
… di Palermo, Palermo, Italy Noise Parameter Data Comparison While Varying the On-Wafer S-Parameter Calibration Technique Fenton, J. R. TRW Inc., Redondo Beach, CA Advanced PSA Bipolar Transistors for Wireless Applications: Characterization … … Alamos National Laboratory Combining RF Functional Testing and In …
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GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications
In focused applications the GaAs HBT offers key advantages over alternative advanced silicon bipolar and III-V compound field-effect tran- sistor (FET) approaches. The TRW GaAs HBT device and IC fabrication process, basic HBT dc and RF performance, examples of applications, and qualification work are presented and serve as a basis for addressing general technology issues.
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The toughest transistor yet [GaN transistors]
amplifiers for cellphone handsets, got into gallium nitride last October by buying RF Nitro Communications, a spinoff … Other labs, including those at HRL (formerly Hughes Research Laboratories), Lucent Technologies’ Bell Labs, TRW , and NEC and Sumitomo in Japan are making GaN-coated wafers for their own internal experiments and are fabricating transis- tors and amplifiers for testing.
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100-GHz cooled amplifier residual PM and AM noise measurements, noise figure, and jitter calculations
In 1996, he was involved with organic transistors and light emitting diodes with AT&T Bell Laborato- ries … In 2000, he joined the Superconducting Electronics Organization, TRW , Space and Electronics, Redondo Beach, CA, where he was involved with RF and digital superconductive elec- tronics and cryopackaging.
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Linearization of L-Band Power Transistor Amplifiers to be used with a Multicarrier Signal
… multicarrier envelope bandwidths,thne ef- fect of the parasitic reactances associated with the RF and bias circuit … Both techniques have been applied to several commercially avail able L-band power transistor (MSC and TRW 3000 series).
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MRS Online Proceedings Library - GaAs Heterojunction Bipolar Transistor Device and IC Technology - Cambridge Journals Online
… offers key advantages over advanced silicon bipolar and III-V compound field-effect transistors is maturing towards … The TRW device and IC fabrication process, basic HBT dc and RF performance, examples of device and IC applications, and technology qualification work are presented and serves as a basis for discussing overall technology issues and impact.
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Page 8. Semiconductor parts with 028 in root number
50 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor TRW .
