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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- VF: 1 volts
- IP: 240 milliamps
- IV: 80 milliamps
- Features: Other, Tunnel Diodes
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Supplier: KRYTAR, Inc.
Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM
- Frequency Range: 500 to 18,500 MHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM
- Frequency Range: 8,000 to 18,000 MHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM
- Frequency Range: 100 to 2,000 MHz
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Supplier: KRYTAR, Inc.
Description: KRYTAR Broadband Planar Tunnel Diode Detectors are specifically designed for use in today’s high-performance microwave instrumentation and systems. KRYTAR detectors are designed for such applications as power measurements, analyzing radar performance, leveling pulsed signal sources, AM
- Frequency Range: 6,000 to 18,000 MHz
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Supplier: Picosecond Pulse Labs, Inc.
Description: Tunnel Diode Pulse Driver work together as a system to produce high speed pulses.Description: The Model TD1107C Tunnel Diode Pulse Head produces a step with an extremely fast edge. The output pulse amplitude is 230 mV into 50 Ohm. A 50 Ohm generator source impedance
- Pulse Duration: 4 µs
- Amplitude: 0.23 volts
- User Interface: Front Panel and Display
- Device Type: Generator
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Supplier: PLC-Multipoint, Inc.
Description: TLUM Tunnel luminance sensors provide analog measurement in Candelas per square meter (cd/m²) that target reflected light at each traffic direction's entrance portal. Long distance signal transmission, up to 5,000 feet is accomplished through a 4-20mA current loop. TLUM Tunnel
- Effective Area Diameter or Length: 126.99993142003704 mm
- Effective Area Width: 101.59994513602963 mm
- Supply Voltage: 24 volts
- Output Type: Current Output
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Supplier: PLC-Multipoint, Inc.
Description: TMAS Tunnel illuminance sensors provide analog measurement in Foot-candles. TMAS sensors may be mounted to monitor ambient light near each entrance tunnel portal in unidirectional traffic bores or be located in a compromise location when both traffic directions share the same bore. The
- Effective Area Diameter or Length: 126.99993142003704 mm
- Effective Area Width: 101.59994513602963 mm
- Supply Voltage: 24 volts
- Output Type: Current Output
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TUNNEL DIODE, TYPES 1N3713, 1N3715, 1N3717, 1N3719 AND 1N3721
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Supplier: Fairview Microwave Inc.
Description: tunnel diode zero bias detector is constructed with SMA male to SMA female connectors. Fairview Microwave SMA to SMA tunnel diode zero bias detector has a minimum frequency of 100 MHz and a maximum frequency of 2 GHz. This SMA coaxial RF tunnel diode zero
- Frequency Range: 100 to 2,000 MHz
- Connector Type: SMA
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Supplier: Fairview Microwave Inc.
Description: tunnel diode zero bias detector is constructed with SMA male to SMA female connectors. Fairview Microwave SMA to SMA tunnel diode zero bias detector has a minimum frequency of 500 MHz and a maximum frequency of 18 GHz. This SMA coaxial RF tunnel diode zero
- Frequency Range: 500 to 18,000 MHz
- Connector Type: SMA
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Supplier: Fairview Microwave Inc.
Description: tunnel diode zero bias detector is constructed with SMA male to SMA female connectors. Fairview Microwave SMA to SMA tunnel diode zero bias detector has a minimum frequency of 12 GHz and a maximum frequency of 18 GHz. This SMA coaxial RF tunnel diode zero
- Frequency Range: 12,000 to 18,000 MHz
- Connector Type: SMA
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Supplier: Fairview Microwave Inc.
Description: tunnel diode zero bias detector is constructed with SMA male to SMA female connectors. Fairview Microwave SMA to SMA tunnel diode zero bias detector has a minimum frequency of 12 GHz and a maximum frequency of 18 GHz. This SMA coaxial RF tunnel diode zero
- Frequency Range: 12,000 to 18,000 MHz
- Connector Type: SMA
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Supplier: Accuris
Description: Semiconductor Device, Tunnel Diode, Types 1N3713, 1N3715, 1N3717, 1N3719 and 1N3721
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and
- Features: Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: DigiKey
Description: Tunnel Diode Zero Bias Detector,
- Frequency Range: 18,000 to 26,000 MHz
- dBm Measurement Range: 17 dBm
- Features: Other
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Description: Deals with tunnel diodes and varactor diodes. The section dealing with varactor diodes is specifically a supplement to the section in IEC 147-2B on variable capacitance diodes.
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Supplier: ValueTronics International, Inc.
Description: pulse (jitter < 10 ps), +1 V into 50 Ω (BSM) 50-W Source Pretrigger output For use with the 7000 Series Plug-ins The S-52 generates the main output pulse using a 50 mA low-capacitance tunnel diode with part number 153-0400-00. The S-52 is similar to the S-50, but the S-50 has twice the
- Device Type: Generator
- Generator Type: Pulse
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diodes is commonly higher than other diodes. Tunnel diodes are similar to the standard P-N junction apart from their doping levels, which are higher and have a more narrow depletion region. Tunneling is an effect that results from quantum mechanical effects as electrons pass through a potential (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC
Conduct Research Top
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
? Elcoteq equity stake gives access to 600 wireless engineers Hybrid tunnel diodes could leapfrog Moore's Law Financial analyst downgrades entire EDA sector IBM expands foundry efforts,
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Physics of Semiconductor Devices
Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant- tunneling diodes , semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices …
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Symmetry-breaking transitions in networks of nonlinear circuit elements
We investigate a nonlinear circuit consisting of N tunnel diodes in series, which shows close similarities to a semiconductor superlattice or to a neural network.
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Physical Models of Semiconductor Quantum Devices
191 4.3 Resonant Tunneling Diode . . . . . . . . . . . . . . . . . . . . . .
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QUANTUM MECHANICAL TUNNELLING AND ITS APPLICATIONS
… are based on a time-dependent or time-independent approach, are inadequate in providing explanations for 1) the limit of resolution of field-emission microscope, 2) the Esaki-Integral representation the tunnelling I-V characteristics of tunnel diodes , 3) the Josephson effect …
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http://dspace.mit.edu/bitstream/handle/1721.1/37094/84842849-MIT.pdf?sequence=2
2.1.1 What is a Tunnel Diode ?
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http://dspace.mit.edu/bitstream/handle/1721.1/4287/RLE-TR-456-04744903.pdf?sequence=1
STATISTICS OF SWITCHING-TIME JITTER FOR A TUNNEL DIODE THRESHOLD-CROSSING DETECTOR .
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http://calhoun.nps.edu/public/bitstream/handle/10945/1784/05Dec_Gelinas.pdf?sequence=1
Ge Tunnel Diode ................................................................................51 4.
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Tunnel devices as switching elements
B.Sc.(Eng.), Ph.D.J Presented at a joint meeting with the Institute of Physics on " Tunnel Diodes " held in London on 7th February 1961.
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A Design Technique for Realizing a Microwave Tunnel-Diode Amplifier in Stripline
Most tunnel diodes are short-circuit .
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Tunnel-Diode Low-Level Detection
UnusuaUy high sensitivities are also pos- sible at the lower microwave frequencies when the tunnel diode is biased at its peak current point.
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