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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT323
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT323
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Supplier: Linear Systems
Description: The SD211DE is a Single, High Speed N-Channel Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact pin-for-pin
- Polarity: N-Channel
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT323
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT323
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Broadcom Inc.
Description: The Avago HCPL-M454 is a power module interface optocouplers.It is similar to Avago's other high speed transistor output optocouplers, but with shorter propagation delays and higher CTR. It also has a guaranteed propagation delay difference (tPLH-tPHL). These features make the
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 100 C
- Input: AC, DC
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Supplier: ROHM Semiconductor GmbH
Description: R6007KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.
- V(BR)DSS: 600 volts
- IDSS: 7,000 milliamps
- QG: 14.5 nC
- PD: 78,000 milliwatts
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C Ultra fast switching for operation at less than 100kHz High voltage: 500 V for off-line SMPS High current: 9 A for up to 350 W SMPS The NTE2393 is an N-channel enhancement mode power MOSFET.
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 14 A @ +25 °C High voltage: 450 V for off-line SMPS High current: 12 A for up to 350 W SMPS Ultra fast switching for operation at less than 100 kHz The NTE2394 is an N-channel enhancement mode power MOSFET.
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra high-speed switching diode arrays Product overview: DA121 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
- Transistor Type: IGBT
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) Product overview: TPCA8014-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Nexperia B.V.
Description: (0.25 mm) Applications Battery switch High-speed line driver High-side load switch Switching circuits
- V(BR)DSS: -20 volts
- IDSS: -900 milliamps
- VGS(off): 0.7 volts
- rDS(on): 0.6 ohms
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 1 × 0.6 × 0.2
- V(BR)DSS: 30 volts
- IDSS: 4,500 milliamps
- VGS(off): 0.8 volts
- rDS(on): 0.065 ohms
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Supplier: Nexperia B.V.
Description: Applications Relay driver High-speed line driver High-side load switch Switching circuits
- V(BR)DSS: -20 volts
- IDSS: -1,399.9999999999998 milliamps
- VGS(off): 0.7 volts
- rDS(on): 0.645 ohms
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Supplier: Richardson RFPD
Description: The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard
- Category: Development Board
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Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series =
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Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series =
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Supplier: Microchip Technology, Inc.
Description: Ultra-low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Freedom from secondary breakdown Low input and output leakage
- VGS(off): -1 volts
- rDS(on): 1.5 ohms
- Transistor Type: MOSFET
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Industrial
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Industrial
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Industrial
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: thermal behaviour and extended C-E creepage. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total
- VCE(on): 1,200 volts
- Switching Speed: 18 to 60 kHz
- tr: 32 ns
- tf: 32 ns
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Supplier: Cosmic Equipment SpA
Description: short circuit, using high performance modular test generators. Throughput: highest UPH (units tested per hour) means best test cell utilization, improved production output, and reduced cost of test for a faster return on investment. Cosmic's M2 platform features ultra fast test
- Component / Product Tested: Active Components / Semiconductors
- Type / Form: Measure Unit / Monitor, Test Platform / System
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Supplier: Cosmic Equipment SpA
Description: short circuit, using high performance modular test generators. Throughput: highest UPH (units tested per hour) means best test cell utilization, improved production output, and reduced cost of test for a faster return on investment. Cosmic's M2 platform features ultra fast test
- Component / Product Tested: Active Components / Semiconductors
- Type / Form: Measure Unit / Monitor, Test Platform / System
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Page 12. Semiconductor parts with 163 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 21. Semiconductor parts with 222 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 13. Semiconductor parts with 164 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 8. Semiconductor parts with 167 in root number
High Voltage Ultra High Speed Switching Transistors .
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Photolithographic fabrication techniques for transistors which are an integral part of a printed circuit
Ultra High - speed Switching Transistor 4.
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High-frequency transistors by the diffused-meltback process employing three impurities
Ultra High - speed Switching Transistor 4.
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3-Tube KW traveling-wave tube amplifier chains for C band and X band
Ultra High - speed Switching Transistor 4.
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High-speed, high-current P-N-P and N-P-N drift transistors
3) Ultra High - speed Switching Transistor -C.
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Page 3. Semiconductor parts with 466 in root number
Silicon NPN transistor for ultra high speed switching applications, computer, counter applications .
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Page 4. Semiconductor parts with 437 in root number
Silicon NPN transistor for ultra high speed switching applications, computer, counter applications .