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Supplier: Linear Systems
Description: The SD213DE is a Single, High Speed N-Channel Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact
- Polarity: N-Channel
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Supplier: Linear Systems
Description: The SD215DE is a Single, High Speed N-Channel Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact
- Polarity: N-Channel
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Supplier: Linear Systems
Description: The SD211DE is a Single, High Speed N-Channel Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact
- Package Type: Other
- Polarity: N-Channel
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Supplier: Linear Systems
Description: The SD210DE is a Single, High Speed N-Channel Lateral DMOS FET Switch, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact pin-for-pin replacement). It is
- Package Type: Other
- Polarity: N-Channel
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: TO-251 / TO-252, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: SOT89, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: SOT323, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: R6007KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: R6004KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: R6004KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- Package Type: TO-220, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: R6015KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- Package Type: TO-220, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Broadcom Inc.
Description: The Avago HCPL-M454 is a power module interface optocouplers.It is similar to Avago's other high speed transistor output optocouplers, but with shorter propagation delays and higher CTR. It also has a guaranteed propagation delay difference (tPLH-tPHL). These features make the
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 100 C
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Supplier: Richardson RFPD
Description: Features High-efficient rectifier High-efficient IGBT H5 + Stealth 2 Diode Ultra-fast switching speed Integrated capacitors Thermistor Target Applications SMPS Welding
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Ultra Fast NPT - IGBT®. The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. Features
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior
- Package Type: TO-263, Other
- Polarity: N-Channel
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 1
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: RS Components, Ltd.
Description: Ultra low loss. High ruggedness. High short circuit capability. Positive temperature coefficient. Applications in Motor drives, Inverter, DC/DC Converter, SMPS and UPS Transistor Configuration = Series Configuration = Series Maximum Continuous Collector Current = 460 A
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching
- Package Type: TO-263, Other
- Polarity: N-Channel, Other
- Transistor Grade / Operating Range: Industrial
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Features Ultra-low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Freedom from secondary breakdown Low input and output leakage
- Package Type: TO-92
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power
- IC(max): 60 amps
- Package Type: TO-247, Other
- Structure: PT
- VCE(on): 2.1 volts
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Supplier: Infineon Technologies AG
Description: 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Switching Speed: 18 to 60 kHz
- VCE(on): 1200 volts
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Supplier: Infineon Technologies AG
Description: includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Differential Input (TDI), 1.5 A peak source and sink current, active Miller clamp, adjustable charge pump, and bootstrap voltage clamp. Thanks to the TDI
- Driver Type: High-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 1.5 amps
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NKK Switches expands its rotary switch lineup with the launch of the ultra-thin FD01 and FD02 Series, engineered to meet the demands of today’s compact electronic designs. With profiles as low as 3.1mm and footprints of just 7.2mm (FD01) and 7.7mm (FD (read more)
Browse DIP Switches Datasheets for New Yorker Electronics Co., Inc. -
We are excited to announce the launch of the Series FD01 and FD02 Ultra-Thin DIP Rotary Switches. The Series FD01 and FD02 stand out with their compact dimensions of 7.2mm and 7.7mm square, respectively, combined with a low-profile height of just 3.1 to 3.3mm. These ultra-thin dimensions make (read more)
Browse Rotary Switches Datasheets for NKK Switches -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
. Package: Compact SOT-23-3 package for space-constrained applications. Key Features High Gain: Provides a minimum hFE of 100 at 10mA, 1V. Versatile: Suitable for switching, amplification, and linear (read more)
Browse Transistors Datasheets for Win Source Electronics -
solution for engineers who need extremely low noise for your sensitive applications. This feature can bring engineers small, light weight and high efficiency with superior ultra low noise feature. You may replace linear power supplies with our superior ultra low noise (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd. -
. Features High performance ASIC based advance sensor Fast responses time down to 1ms Excellent noise immunity to DC light with modulated light source and CDS signal process technology Ultra-thin structure with location holes, easy to install Reverse polarity protection, output short-circuit protection, over current protection (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
The D2LS Ultra Subminiature Basic Switch by OMRON is a compact and reliable surface-mount terminal type operation switch. It is designed to meet the demands of various applications, offering high load types and a long operating life. With its compact size of 8.6×4.8×3.0mm (read more)
Browse Snap Action Switches Datasheets for Omron Electronic Components – Americas -
The Series FD01 and FD02 stand out with their compact dimensions of 7.2mm and 7.7mm square, respectively, combined with a low-profile height of just 3.1 to 3.3mm. These ultra-thin dimensions make them perfectly suited for high-density mounting, addressing the growing need for space-saving yet (read more)
Browse Rotary Switches Datasheets for NKK Switches -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
: -40? to +60? Nominal diameter: 2” Connection: 1/4”NPT(M) Scale: bar / psig Window: Laminated safety glass Switching accuracy: ±2.5% Material of connection: see ordering info (read more)
Browse Pressure Gauges Datasheets for Shenzhen Jewellok Technology Co., Ltd.
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Page 12. Semiconductor parts with 163 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 21. Semiconductor parts with 222 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 13. Semiconductor parts with 164 in root number
High Voltage Ultra High Speed Switching Transistors .
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Page 8. Semiconductor parts with 167 in root number
High Voltage Ultra High Speed Switching Transistors .
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Photolithographic fabrication techniques for transistors which are an integral part of a printed circuit
Ultra High - speed Switching Transistor 4.
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High-frequency transistors by the diffused-meltback process employing three impurities
Ultra High - speed Switching Transistor 4.
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3-Tube KW traveling-wave tube amplifier chains for C band and X band
Ultra High - speed Switching Transistor 4.
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High-speed, high-current P-N-P and N-P-N drift transistors
3) Ultra High - speed Switching Transistor -C.
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Page 3. Semiconductor parts with 466 in root number
Silicon NPN transistor for ultra high speed switching applications, computer, counter applications .
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Page 4. Semiconductor parts with 437 in root number
Silicon NPN transistor for ultra high speed switching applications, computer, counter applications .