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Supplier: Nexperia B.V.
Description: High-speed switching diode, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 4 ns Low capacitance Low leakage current Reverse voltage: VR
- VF: 715 to 0.715 volts
- IF: 250 mA
- VR: 100 volts
- IR: 0.00003 mA
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Supplier: Nexperia B.V.
Description: Quad high-speed switching diodes with common anode configurations encapsulated in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 4 ns Low leakage
- VF: 715 to 0.715 volts
- IF: 375 mA
- VR: 90 volts
- IR: 0.00003 mA
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Supplier: Nexperia B.V.
Description: Single high-speed switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High switching speed: trr ≤ 4 ns Low leakage
- VF: 715 to 0.715 volts
- IF: 290 mA
- VR: 100 volts
- IR: 0.00003 mA
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Supplier: Nexperia B.V.
Description: Dual series high-speed switching diodes, encapsulated in an ultra small DFN1110D-3 (SOT8015, JEDEC MO340-BA) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High switching speed: trr ≤ 4
- VF: 715 to 0.715 volts
- IF: 300 mA
- VR: 90 volts
- IR: 0.00003 mA
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Supplier: ROHM Semiconductor GmbH
Description: Ultra small mold type package Switching Diode DAN217WM is suitable for high frequency switching applications.
- VF: 1.2 volts
- IF: 100,000 mA
- VR: 80 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Linear Systems
Description: The SD211DE is a Single, High Speed N-Channel Lateral DMOS FET Switch with Zener Diode Protection, ideal for Ultra-High Speed Switching Applications. LIS acquired the Siliconix Lateral DMOS FET Switch product line (same maskset/same process/exact
- Polarity: N-Channel
- Features: Other
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Supplier: Broadcom Inc.
Description: The Avago HCPL-M454 is a power module interface optocouplers.It is similar to Avago's other high speed transistor output optocouplers, but with shorter propagation delays and higher CTR. It also has a guaranteed propagation delay difference (tPLH-tPHL). These features make the
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 100 C
- Input: AC, DC
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Supplier: Richardson RFPD
Description: DIODE PHASE LEG POWER MODULE. Application: Anti-Parallel Diode, Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage,
- IF: 400,000 mA
- RoHS Compliant: RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: RB715FM-40FH is a ultra low VF schottky barrier diode, suitable for high speed switching. This is a highly reliable product for automotive.
- VF: 0.37 volts
- IF: 1 mA
- VR: 40 volts
- VRRM: 40 volts
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Supplier: Rochester Electronics
Description: Ultra High Speed Switching Diode
- RoHS Compliant: RoHS Compliant
- Diode Applications: Switching
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Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1.45 volts
- IF: 20,000 mA
- VR: 350 volts
- Pin Count: 3
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Supplier: Newport MKS
Description: The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC
- Receiver Rise Time: 0.025 ns
- Bandwidth: 0 to 15,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: The 818-BB-45 High Speed GaAs Detector consists of a free-space 500 to 890 nm battery biased GaAs photodetector with a 60 µm active diameter and a <30 ps rise time. It includes a built-in bias supply consisting of one standard 3V lithium cells and a SMA connector output. The
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1.7 volts
- IF: 10,000 mA
- VR: 430 volts
- Tj: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: Features: Low VF Super High Speed Switching High Reliability By Planer Design Ultra Small Package, Possible for 5 mm Pitch Automatic Insertion Application: High Speed Switching
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Supplier: Radwell International
Description: DIODE SILICON EPITAXIAL PLANAR TYPE, ULTRA HIGH SPEED SWITCHING, FORWARD VOLTAGE, 0.92V, VF, TRR, 1.6NS, TIME REVERSE RECOVERY, CAPACITANCE, CT, 0.9PF, 85V, 100MA, SOT-143, 2.9X1.5MM. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: kTB Solutions
Description: kTB High ENR Noise Sources The KTB k2600 Series High ENR Noise Source embody excellent stability with temperature and voltage. They are well suited for receiver testing, noise figure measurements, and any application requiring broad bandwidth and fast switching time. Like all
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Ultra high-speed switching diode arrays Product overview: DAN212K from ROHM Semiconductor is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for
- Diode Applications: Rectifier Diode
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Supplier: Wolfspeed
Description: Technical features Ultra-low loss, low inductance High-efficiency operation High-frequency, ultra-fast switching operation Zero reverse-recovery current from diode Zero turn-off tail current from MOSFET Normally-off, fail-safe device operation Ease of
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Supplier: Richardson RFPD
Description: Features High-efficient rectifier High-efficient IGBT H5 + Stealth 2 Diode Ultra-fast switching speed Integrated capacitors Thermistor Target Applications SMPS Welding
- Features: IGBT, Other
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Transistors - 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs -- IXFH34N60X2ASupplier: Littelfuse, Inc.
Description: minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Package Type: TO-247
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Supplier: Littelfuse, Inc.
Description: the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
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Supplier: Microchip Technology, Inc.
Description: 20V without requiring additional cooling. The MIC45116-1 uses HyperLight Load® (HLL) which maintains high efficiency under light load conditions by transitioning to variable frequency, discontinuous-mode operation. The MIC45116-2 uses Hyper Speed Control® architecture which enables
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45208-1 uses HyperLight Load® (HLL) while the MIC45208-2 uses Hyper Speed Control™ (HSC) architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45208 offers 1% output
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45205-1 uses HyperLight Load® (HLL) MIC45205-2 uses Hyper Speed Control™ architecture which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45205 offers 1% output accuracy that can
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: to 26V, without requiring additional cooling. The MIC45212-1 uses HyperLight Load® (HLL) while the MIC45212-2 uses Hyper Speed Control™ architecture, which enables ultra-fast load transient response, allowing for a reduction of output capacitance. The MIC45212 offers 1% output accuracy
- Features: Other
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Supplier: Richardson RFPD
Description: These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit lower series resistance, lower capacitance, and faster switching speeds than Silicon based devices. They
- Frequency Range: 50 to 70,000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 46 dB
- Switching Speed: 0.00001 ms
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Supplier: Infineon Technologies AG
Description: Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode Summary of Features • ESD / transient protection of high speed data and RF lines according to: – IEC61000-4-2 (ESD): ±15 kV (air/contact) – IEC61000-4-4 (EFT): 40 A (5/50 ns) – IEC61000-4-5 (surge): 2 A
- IR: 0.00003 to 0.000001 mA
- Diode Applications: Protector
- RoHS Compliant: RoHS Compliant
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Supplier: Vincotech GmbH
Description: with ultra fast diodes improved LVRT Mixed Voltage Neutral Point Clamped Topology (T-Type) Kelvin Emitter for improved switching performance Temperature sensor Easy paralleling High speed switching Low switching losses Clip-in, reliable mechanical
- Output Voltage: 1,200 volts
- Output Current: 80 amps
- Technology: IGBT
- Features: Other / Specialty Configuration, Other / Specialty Technology
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Supplier: Richardson RFPD
Description: Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Benefits
- Features: MOSFET, Other
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Features: Industrial, MOSFET, Other
- Polarity: N-Channel
- Packing Method: Tape Reel
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Features: Industrial, MOSFET, Other
- Polarity: N-Channel
- Package Type: TO-263
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Supplier: Infineon Technologies AG
Description: unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs
- TJ: -55 to 175 C
- Features: Industrial, MOSFET, Other
- Polarity: N-Channel
- Package Type: TO-263
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Data Sheets: HN2D02FUTW1T1/D
Ultra High Speed Switching Diodes .
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Page 1. Semiconductor parts with 448 in root number
SURFACE MOUNT SILICON ULTRA HIGH SPEED SWITCHING DIODE .
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Page 1. Semiconductor parts with 444 in root number
SURFACE MOUNT SILICON ULTRA HIGH SPEED SWITCHING DIODE .
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Microsemi Announces DSCC Qualification On Diode Arrays For Defense And Aerospace Applications
Each part type is constructed utilizing multiple 1N4148 ultra high speed switching diode chips manufactured in Microsemi's JANS wafer fab.
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Datasheet for 1SS355, Silicon high-speed switching diode. 1SS355 .pdf : 1.000.000 datasheets for Electronic Components and Semiconductors
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE .
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Semiconductors Catalogue -->Diodes-->Switching applications-->Ultra high speed
Silicon diode for ultra high speed switching applications .
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Page 9. Semiconductor parts with 360 in root number
Silicon diode for ultra high speed switching applications .
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ds200 datasheet : Datasheets for Electronic Components and Semiconductors
Silicon diode for ultra high speed switching applications .
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s187 datasheet : Datasheets for Electronic Components and Semiconductors
Silicon diode for ultra high speed switching applications .