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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Sensitivity: 0.14 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 4.57 mm
- Operating Temperature: 0 to 70 C
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Sensitivity: 0.14 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 2.54 mm
- Rise Time: 0.9 ns
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Sensitivity: 0.17 A/W
- Spectral Response Range: 200 to 750 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
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Supplier: OSI Optoelectronics
Description: with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section
- Sensitivity: 0.5 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 11.280000000000001 mm
- Rise Time: 2,000 ns
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Supplier: Ophir-Spiricon Inc.
Description: Rechargeable battery inside power unit
- Spectral Response Range: 190 to 1,100 nm
- Active Area Diameter or Length: 4 mm
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Kipp & Zonen, Inc.
Description: voltage output linearly proportional to the UV intensity. SUV5 is not suitable for the measurement of specific parts of the UV spectrum such as UVA, UVB or UVE / UV Index. For measurement of these individual parameters our UVS Series is required. A waterproof plug and
- Wavelength Range: 280 to 400 nm
- Operating Temperature Range: -40 to 80 C
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Supplier: Artifex Engineering
Description: Fields of Application These optical power monitors are used for the measurement and monitoring of optical power from the UV to near IR. The output is a voltage linearly proportional to power. The fast response time at high signal-noise-ratio makes the OPM series particularly useful in
- Wavelength Range: 200 to 2,100 nm
- Operating Temperature: 0 to 60 C
- Test Equipment Type: Bench Top
- Features: Fiber Optic Power Meter, Other
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Supplier: Newport MKS
Description: detectors are very susceptible to damage by electrostatic discharge (ESD). Please use ESD protective measures, like the FK-STRAP , when unpacking and handling these devices. Rise Times as Fast as 25 ps The 818-BB-35 and 818-BB-45 photodiode detector modules offer a low-cost solution
- Receiver Rise Time: 3 ns
- Bandwidth: 0 to 118 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Artifex Engineering
Description: Fields of Application These optical power monitors are used for the measurement and monitoring of optical power from the UV to near IR. The output is a voltage linearly proportional to power. The fast response time at high signal-noise-ratio makes the OPM series particularly useful in
- Optical Power Range: 6.499999999999999 dBm
- Wavelength Range: 200 to 2,100 nm
- Operating Temperature: 0 to 60 C
- Test Equipment Type: Bench Top
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Supplier: Newport MKS
Description: The 818-BB-51 High Speed InGaAs Detector is built from a free-space extended InGaAs photodiode with a 40 um active diameter and a fast <28 ps rise time. With the wavelength range of 830 - 2150 nm, it allows monitoring Thulium (Tm) and Holmium (Ho) doped lasers as well as other NIR
- Receiver Rise Time: 0.028 ns
- Bandwidth: 0 to 10,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply. InGaAs Free Space
- Receiver Rise Time: 0.175 ns
- Bandwidth: 0 to 2,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Waters Corporation
Description: controlled environment. Compatible with a wide range of detection techniques, including refractive index, UV/Visible, photodiode array, evaporative light scattering and compatibility with advanced techniques like multi-angle light scattering and viscometry.
- Analysis Method: Analytical Analysis
- Remote Interface: Computer Interface
- Instrument Type: Fixtured or Permanent
- Detector Type: Mass Spectroscopy Detector
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Supplier: Newport MKS
Description: YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply. InGaAs
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Waters Corporation
Description: detection capabilities with ACQUITY UPLC Fluorescence (FLR), Tunable UV (TUV), Photodiode Array (PDA), Evaporative Light Scattering (ELS), and Refractive Index (RI) detectors to single, tandem, and time-of-flight mass spectrometers Easily compatible with third-party MS solutions
- Analysis Method: Analytical Analysis
- Remote Interface: Computer Interface
- Instrument Type: Fixtured or Permanent
- Detector Type: Fluorescence Detector, Light Scattering Detector, Mass Spectroscopy Detector, Refractive Index Detector, Ultraviolet / Visible Light Detector
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Supplier: DigiKey
Description: Photodiode 254nm
- Operating Temperature: -10 to 40 C
- Dark Current: 2 nA
- Photodiode Package: Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Hamamatsu Photonics Europe
Description: 16 element Si photodiode array for UV to NIR The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range
- Sensitivity: 0.58 A/W
- Spectral Response Range: 190 to 1,100 nm
- Rise Time: 500 ns
- Dark Current: 0.005 nA
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Supplier: Hamamatsu Photonics Europe
Description: For UV to IR, precision photometry Features - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance
- Sensitivity: 0.5 A/W
- Spectral Response Range: 190 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
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Supplier: RS Components, Ltd.
Description: Silicon PIN Photodiode
- Spectral Response Range: 380 nm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Sensitivity: 0.13 A/W
- Spectral Response Range: 205 to 395 nm
- Active Area Diameter or Length: 0.10000000000000002 to 2.525 mm
- Active Area Height: 5.1000000000000005 mm
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Spectral Response Range: 315 to 395 nm
- Operating Temperature: -25 to 85 C
- Photodiode Package: Leaded, Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &
- Active Area Diameter or Length: 0.266 to 1 mm
- Active Area Height: 0.266 to 1 mm
- Photodiode Package: Leaded, Through Hole Technology (THT)
- Photodiode Spectral Response: UV
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Operating Temperature: -55 to 125 C
- Dark Current: 25 nA
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Photodiode Spectral Response: UV
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 800 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 1.8 ns
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 350 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 5 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 2 to 5.000000000000001 mm
- Rise Time: 500 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Spectral Response Range: 190 to 20,000 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 310 to 850 nm
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Rise Time: 0.6 ns
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 250 to 2,940 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Rise Time: 0.7 ns
- Quantum Efficiency: 100 %
- Operating Temperature: -20 to 80 C
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Temperature measurements in sooting counterflow diffusion flames using laser-induced fluorescence of flame-produced nitric oxide
Relative laser pulse energy, measured with a fast UV photodiode , was used to normalize the acquired images for varying laser intensities.
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A shock tube study of the OH + OH → H 2 O + O reaction
The beam intensity was measured before and after passing through the shock tube via fast uv photodiode detectors (EG&G WlOOBQ, electronic 3-dB bandwidth of 350 kHz) with a 2.5 mm diameter active surface area.
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Phonon and Photon Emission from Optically Excited InGaN/GaN Multiple Quantum Wells
In order to extract the “pure” phonon signal we measured the PL pulses separately using a fast UV photodiode .
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A shock tube study of CO + OH → CO 2 + H and HNCO + OH → products via simultaneous laser absorption measurements of OH and CO 2
The beam intensity was measured before and after passing through the shock tube via fast uv photodiode detectors (EG&G UVlOOBQ, electronic -3dB bandwidth of 350 kHz) with 2.5 mm diameter active surface areas.
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Atmospheric pressure operation of a repetitive KrF laser-plasma x-ray source at hv = 1.1 keV
A typical trace of the laser pulse time dependence obtained with the fast UV photodiode is also shown.
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Characterization of laser produced tetrakis (dimethylamino) ethylene plasma in a high-pressure background gas
In order to reference the plasma temporal emission to the turn-on of the laser pulse, the laser temporal profile was accurately measured by a fast UV photodiode (Hamamatsu S1226-18BQ with less than 10-ns rise time) using a 2-GHz …
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INSTRUMENTATION IN HIGH ENERGY PHYSICS
Figure 71: 5.44-MeV or signals detected using a UV photodiode and fast amplifier: .
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Acetone laser induced fluorescence for low pressure/low temperature flow visualization
The pulse-to-pulse laser energy was monitored by a UV sen- sitive fast photodiode (Thorlabs DET2-SI), while the av- erage laser energy was monitored by a disc calorimeter (Scientech 38-1UV5).
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Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes
The response time reflects how fast the UV photodiode is when it is biased and illuminated.