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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Active Area Diameter or Length: 2.54 mm
- Noise Equivalent Power (NEP): 9.20E-14 W/Hz½
- Operating Temperature: 0.0 to 70 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Active Area Diameter or Length: 5.08 mm
- Noise Equivalent Power (NEP): 1.30E-13 W/Hz½
- Operating Temperature: -10 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Active Area Diameter or Length: 11.28 mm
- Noise Equivalent Power (NEP): 4.50E-13 W/Hz½
- Operating Temperature: -10 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer
- Active Area Diameter or Length: 50.8 mm
- Noise Equivalent Power (NEP): 2.00E-13 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Ophir-Spiricon Inc.
Description: Rechargeable battery inside power unit
- Active Area Diameter or Length: 4 mm
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 1100 nm
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Supplier: RS Components, Ltd.
Description: applications. . Features of the TEMD5080 photodiode:. Surface mounted (SMD). Top looking. Dimensions: 5 x 4.24 x 1.12. Enhanced blue photo sensitivity. Fast response times Spectrums Detected = Infrared, Ultraviolet, Visible Light Wavelength of Peak Sensitivity = 940nm Mounting Type =
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: RS Components, Ltd.
Description: applications. . Features of the TEMD5080 photodiode:. Surface mounted (SMD). Top looking. Dimensions: 5 x 4.24 x 1.12. Enhanced blue photo sensitivity. Fast response times Spectrums Detected = Infrared, Ultraviolet, Visible Light Wavelength of Peak Sensitivity = 940nm Mounting Type =
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: Kipp & Zonen, Inc.
Description: combined UVA and UVB irradiance, as shown in the graph below. The photodiode generates a voltage output linearly proportional to the UV intensity. SUV5 is not suitable for the measurement of specific parts of the UV spectrum such as UVA, UVB or UVE / UV Index. For
- Operating Temperature Range: -40 to 80 C
- Wavelength Range: 280 to 400 nm
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Supplier: Kipp & Zonen, Inc.
Description: combined UVA and UVB irradiance, as shown in the graph below. The photodiode generates a voltage output linearly proportional to the UV intensity. SUV5 is not suitable for the measurement of specific parts of the UV spectrum such as UVA, UVB or UVE / UV Index. For
- Device Classification: Sensor Only
- Measures Solar Radiation: Yes
- Operating Temperature: -40 to 70 F
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Supplier: Artifex Engineering
Description: dynamic range of the system. Fields of Application These optical power monitors are used for the measurement and monitoring of optical power from the UV to near IR. The output is a voltage linearly proportional to power. The fast response time at high signal-noise-ratio makes
- Cable Type: Single-mode / Multimode
- Connector Type: Other
- Form Factor: Bench Top
- Operating Temperature: 0.0 to 60 C
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UV Light Systems - Laser Diode Controller, 10/20A, 4V, 128W TEC, USB & GPIB, High Power -- LDC-37620Supplier: Newport MKS
Description: - fast output shutoff - provides an additional level of protection from intermittent contact between the laser and the current source. Intermittent contact can occur by loose or worn cables causing a momentary open in the circuit or by pogo-pins momentarily losing connection to the laser. If
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Supplier: Newport MKS
Description: A feature not found in competitors' controllers - fast output shutoff - provides an additional level of protection from intermittent contact between the laser and the current source. Intermittent contact can occur by loose or worn cables causing a momentary open in the circuit or by pogo
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Supplier: Newport MKS
Description: , providing worry free, fail-safe control of laser diodes.For more information about these protection features, please see our “Protecting Your Laser Diode" application note. Unique Laser Diode Protection Feature A feature not found in competitors' controllers - fast
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Supplier: Newport MKS
Description: compatible with a large selection of ILX Lightwave laser diode TO-can, butterfly, and DIL laser mounting fixtures with interconnect cables for fast, easy system set up. We offer a wide variety of precision laser diode mounts with plug and play compatibility with our laser diode
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Supplier: Artifex Engineering
Description: dynamic range of the system. Fields of Application These optical power monitors are used for the measurement and monitoring of optical power from the UV to near IR. The output is a voltage linearly proportional to power. The fast response time at high signal-noise-ratio makes
- Connector Type: Other
- Form Factor: Bench Top
- Operating Temperature: 0.0 to 60 C
- Optical Power Range: Up to 6.5 dBm
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Supplier: Waters Corporation
Description: allows you to automatically select between up to two banks of ACQUITY APC columns and up to two banks of traditional GPC columns -- all housed in a stable, temperature controlled environment. Compatible with a wide range of detection techniques, including refractive index, UV/Visible,
- Analysis Method: Analytical Analysis
- Computer Interface: Yes
- Detection Method: Mass Spectroscopy Detector
- Instrument Type: Fixtured or Permanent
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Supplier: Waters Corporation
Description: tasks, including ACQUITY UPLC 1.7 µm columns, VanGuard pre-columns or ACQUITY UPLC HSS and HSS T3 1.8 µm columns Extended detection capabilities with ACQUITY UPLC Fluorescence (FLR), Tunable UV (TUV), Photodiode Array (PDA), Evaporative Light Scattering (ELS), and Refractive Index (RI
- Analysis Method: Analytical Analysis
- Computer Interface: Yes
- Detection Method: Ultraviolet / Visible Light Detector, Refractive Index Detector, Fluorescence Detector, Light Scattering Detector, Mass Spectroscopy Detector
- Instrument Type: Fixtured or Permanent
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2500 to 3.3 mm
- Active Area Height: 0.2500 to 3.3 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: RS Components, Ltd.
Description: The BPW 21, from OSRAM Opto Semiconductors, is a photodiode within a TO-39 metal can package. This through-hole metal package is hermetically sealed. The BPW 21 has been designed for applications from 350 to 820 nm, similar to the human eye (VLambda). Suitable applications for the BPW 21
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 820 nm
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Supplier: RS Components, Ltd.
Description: This family of PIN photodiodes, from OSRAM Opto Semiconductor, are in DIL plastic packages. The BPW 34 family offer enhanced blue sensitivity from a radiant sensitive area of 2.73 x 2.73 mm². These PIN photodiodes have a half angle of 60° and are available in both through-hole and
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 350 to 1100 nm
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2660 to 1 mm
- Active Area Height: 0.2660 to 1 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Operating Temperature: -25 to 85 C
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
- Spectral Response Range: 315 to 395 nm
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Connectorized
- Quantum Efficiency: 100 %
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Spectral Response: UV
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Rise Time: 2.00E8 ns
- Spectral Response: UV, Visible, IR
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Active Area Diameter or Length: 16 mm
- Rise Time: 3.50E9 ns
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 150 to 6000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Active Area Diameter or Length: 17.5 mm
- Rise Time: 1.20E9 ns
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 20000 nm
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Hamamatsu Photonics Europe
Description: High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light
- Active Area Diameter or Length: 1.1 mm
- Active Area Height: 1.1 mm
- Dark Current: 0.0100 nA
- Photodiode Material: Silicon
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Supplier: DigiKey
Description: Photodiode 254nm
- Dark Current: 2 nA
- Operating Temperature: -10 to 40 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Spectral Response: UV
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Temperature measurements in sooting counterflow diffusion flames using laser-induced fluorescence of flame-produced nitric oxide
Relative laser pulse energy, measured with a fast UV photodiode , was used to normalize the acquired images for varying laser intensities.
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A shock tube study of the OH + OH → H 2 O + O reaction
The beam intensity was measured before and after passing through the shock tube via fast uv photodiode detectors (EG&G WlOOBQ, electronic 3-dB bandwidth of 350 kHz) with a 2.5 mm diameter active surface area.
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Phonon and Photon Emission from Optically Excited InGaN/GaN Multiple Quantum Wells
In order to extract the “pure” phonon signal we measured the PL pulses separately using a fast UV photodiode .
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A shock tube study of CO + OH → CO 2 + H and HNCO + OH → products via simultaneous laser absorption measurements of OH and CO 2
The beam intensity was measured before and after passing through the shock tube via fast uv photodiode detectors (EG&G UVlOOBQ, electronic -3dB bandwidth of 350 kHz) with 2.5 mm diameter active surface areas.
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Atmospheric pressure operation of a repetitive KrF laser-plasma x-ray source at hv = 1.1 keV
A typical trace of the laser pulse time dependence obtained with the fast UV photodiode is also shown.
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Characterization of laser produced tetrakis (dimethylamino) ethylene plasma in a high-pressure background gas
In order to reference the plasma temporal emission to the turn-on of the laser pulse, the laser temporal profile was accurately measured by a fast UV photodiode (Hamamatsu S1226-18BQ with less than 10-ns rise time) using a 2-GHz …
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INSTRUMENTATION IN HIGH ENERGY PHYSICS
Figure 71: 5.44-MeV or signals detected using a UV photodiode and fast amplifier: .
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Acetone laser induced fluorescence for low pressure/low temperature flow visualization
The pulse-to-pulse laser energy was monitored by a UV sen- sitive fast photodiode (Thorlabs DET2-SI), while the av- erage laser energy was monitored by a disc calorimeter (Scientech 38-1UV5).
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Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes
The response time reflects how fast the UV photodiode is when it is biased and illuminated.