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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Rise Time: 2.00E8 ns
- Spectral Response: UV, Visible, IR
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Supplier: Hamamatsu Photonics
Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of f4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the
- Active Area Diameter or Length: 4.1 mm
- Active Area Height: 4.1 mm
- Dark Current: 30 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Spectral Response: UV
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes 1000x1000um act area UV-Blue PIN Phtdiode
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Supplier: Hamamatsu Photonics
Description: Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment.
- Array: Yes
- Dark Current: 0.2000 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Si PIN photodiode for UV to near infrared region The S13337-01 is a surface mount type Si PIN photodiode in a ceramic package with glass. This achieves high-speed response in the UV to near infrared region. Features - High-speed response - Surface mount type, compact,
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 0.5000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 1 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Connectorized
- Quantum Efficiency: 100 %
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Supplier: Opto Diode Corporation, an ITW Company
Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our
- Active Area Diameter or Length: 10 mm
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Leaded
- Rise Time: 250 ns
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Supplier: OSI Optoelectronics
Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating
- Active Area Diameter or Length: 2.54 mm
- Noise Equivalent Power (NEP): 9.20E-14 W/Hz½
- Operating Temperature: 0.0 to 70 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit low sensitivity deterioration under UV light
- Active Area Diameter or Length: 1.1 mm
- Active Area Height: 1.1 mm
- Dark Current: 0.0100 nA
- Photodiode Material: Silicon
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Supplier: DigiKey
Description: Photodiode 254nm
- Dark Current: 2 nA
- Operating Temperature: -10 to 40 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Spectral Response: UV
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Supplier: DigiKey
Description: Photodiode 1µs 45°
- Dark Current: 1 nA
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 1000 ns
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Supplier: DigiKey
Description: Photodiode 1µs 45°
- Dark Current: 1 nA
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 1000 ns
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Supplier: DigiKey
Description: Photodiode 4µs
- Operating Temperature: -20 to 80 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Rise Time: 4000 ns
- Sensitivity: 0.1150 A/W
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Active Area Diameter or Length: 4.39 mm
- Active Area Height: 0.8900 mm
- Array: Yes
- Noise Equivalent Power (NEP): 6.80E-14 W/Hz½
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 2.57 mm
- Noise Equivalent Power (NEP): 9.10E-15 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 11.33 mm
- Noise Equivalent Power (NEP): 4.10E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
- Photodiode Material: Other
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies
- Active Area Diameter or Length: 8 mm
- Photodiode Material: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 12000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Recommended use for high and low repetition rate pulse measurement
- Active Area Diameter or Length: 12 mm
- Photodiode Material: Other
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 150 to 12000 nm
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Supplier: Ophir-Spiricon Inc.
Description: Recommended for measurement of low energies and high repetition rates
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Spectral Response: UV, Visible, IR
- Spectral Response Range: 190 to 1100 nm
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: ODG (Origin Data Global)
Description: PHOTODIODE UV 5MM2
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Capella Microsystems, Inc.
Description: UV Sensor UV Sensor (UVS) Capella's Ultraviolet light sensor (UV Sensor, UVS) is an integrated light sensing solution measuring light in the UVA/UVB spectrums. It incorporates a photodiode, amplifiers, and analog/digital circuits into a single chip by a CMOS process.
- Display Type: None
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Supplier: Micropac Industries, Inc.
Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Newport MKS
Description: very high power level, elevated temperature of the integrating sphere system can affect the measurement accuracy so the sphere must be temperature controlled. Calibration is done only with no attenuator on the photodiode. We recommend purging the inside of the sphere to avoid potential photo
- Spectral Response Range: 200 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV
- Spectral Response Range: 190 to 1100 nm
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE UV 5MM2
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Description: SENSOR REMOTE REC 38.0KHZ 8M
- Operating Temperature: -10 to 70 C
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Supplier: Newport MKS
Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier provides
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Supplier: Kipp & Zonen, Inc.
Description: For monitoring of ‘total UV’ irradiance Excellent linearity and directional response Reliable under all weather conditions 5 year warranty (*) CUV5 is a general-purpose instrument for applications in meteorology, for material testing
- Operating Temperature Range: -40 to 80 C
- Wavelength Range: 280 to 400 nm
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Supplier: Newport MKS
Description: The 818-UV/DB Low-Power UV Enhanced Silicon Photodetector is supplied with a NIST traced calibration report that details individual detector responsivity measured with and without attenuator. Exclusive removable OD3 attenuator (Model 884-UVR) technology extends the calibrated optical
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The Silicon Carbide (SiC) UV APDs are extremely sensitive and have high signal gain, but are only sensitive to UV . Because the substrate is tougher SiC, the bias voltage is higher than (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc. -
coefficient Tk<-0,06%/K), stable long term operation of up to +150°C SiC photodiodes features & types High responsivity - 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc. -
Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm.
(read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics
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Stable, High Quantum Efficiency, UV-Enhanced Silicon Photodiodes By Arsenic Diffusion (.pdf)
Very high, quantum efficiency, UV-enhanced silicon photodiodes have been developed by arsenic diffusion into p-type silicon as an alternative to the inversion layer photodiodes commonly used in precise radiometric and spectroscopic measurements. The fabricated diodes had an unbiased internal
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CCD Image Sensors in Deep-Ultraviolet
195 13.1 Optimization Techniques Based on UV Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
The common Si enhanced UV photodiodes still dominate the UV detection market, due to the well-established technology and low price. .
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Modeling, fabrication and measurement of a novel CMOS UV/blue-extended photodiode
PAUCHARD et al [3] and GHAZI et al [4] proposed the silicon based UV photodiodes fabricated in standard complementary metal oxide semiconductor (CMOS) process.
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Optoelectronic Sensors
UV photodiodes based on silicon . . . . . . . . . . . . . . . . .
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A novel integrated ultraviolet photodetector based on standard CMOS processProject supported by the National Natural Science Foundation of China (Grant No. 612...
The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one.
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http://research-repository.st-andrews.ac.uk/bitstream/10023/2066/7/JackW.LevellPhDThesis.pdf
on a simple model that can be used to explain the response of UV photodiodes given .
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Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes
A. R. Pauchard [3] and Ayman Ghazi [4] proposed the silicon based UV photodiodes fabricated in the standard complementary metal oxide semiconductor (CMOS) process.
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Integrated Silicon Optoelectronics
The UV photodiode is biased at zero volts.
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Nitride Semiconductors: Handbook on Materials and Devices Complete Document
Silicon-Based UV Photodiodes 632 .
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Large-area transparent in visible range silicon carbide photodiode
Keywords: UV photodiode , Silicon carbide photodiode, large area photodiode, optical sensors, photodetectors .