UV Photodiode

Description: 180 VDC. These SiC UV APDs are a solid state replacement for UV PMTs (Photo Multiplier Tubes). Besides responding only to the UV, the tough silicon carbide (SiC) provides: Stability in high energy UV applications Higher temperature stability than silicon The general

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our

• Active Area Diameter or Length: 10.000000000000002 mm
• Rise Time: 250 ns
• Operating Temperature: -20 to 80 C
• Photodiode Package: Leaded

Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our

• Active Area Diameter or Length: 10.000000000000002 mm
• Rise Time: 250 ns
• Operating Temperature: -20 to 80 C
• Photodiode Package: Leaded

Description: Our detector preamplifiers are available in standard amplifier gains from 100K to 500K and custom amplifier gains, if needed. Opto Diode also offers visible or near infrared (near IR) enhanced versions. To order standard product, please choose the device that suits your need and order now from our

• Active Area Diameter or Length: 1 mm
• Rise Time: 0.7 ns
• Quantum Efficiency: 100 %
• Operating Temperature: -20 to 80 C

Description: Opto Diode offers a full line of IRD UV photodiodes with unparalleled 100% internal quantum efficiency, stability and radiation hardness. With photon detection to 1 nm and electron detection to 200 eV, these IRD UV devices are ideal for the most critical measurements of visible,

Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &

• Sensitivity: 0.13 A/W
• Spectral Response Range: 230 to 530 nm
• Active Area Diameter or Length: 1.1 to 3.6 mm
• Active Area Height: 1.1 to 3.6 mm

Description: Automatic dynamic cancellation of up to 98% of background light

• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Active Area Height: 10.000000000000002 mm
• Rise Time: 200,000,000 ns

Description: Photodiodes 1000x1000um act area UV-Blue PIN Phtdiode

Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating

• Sensitivity: 0.14 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 2.54 mm
• Operating Temperature: 0 to 70 C

Description: SENSOR PHOTODIODE 980NM MOD

• Sensitivity: 0.33 A/W
• Rise Time: 3,000 ns
• Operating Temperature: -20 to 60 C
• Features: Other

Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low

• Sensitivity: 0.06 A/W
• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 4.39 mm
• Active Area Height: 0.89 mm

Description: Si PIN photodiode

• Spectral Response Range: 320 to 1,100 nm
• Photodiode Type: PIN Photodiode
• Photodiode Spectral Response: UV

Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the

• Sensitivity: 0.5 A/W
• Spectral Response Range: 190 to 1,100 nm
• Active Area Diameter or Length: 4.1000000000000005 mm
• Active Area Height: 4.1000000000000005 mm

Description: Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment.

• Sensitivity: 0.45 A/W
• Spectral Response Range: 190 to 1,000 nm
• Dark Current: 0.2 nA
• Array: Array

Description: OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer

• Sensitivity: 0.14 A/W
• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 6.6000000000000005 mm
• Active Area Height: 5.33 mm

Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier provides

Description: The DET-L-SIUV-T-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 5 mm diameter active area, UV-enhanced Silicon photodiode with 1-stage TE cooler and low-noise trans

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for

• Sensitivity: 35 to 50 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.04 mm
• Active Area Height: 230 mm

Description: PHOTODIODE UV 5MM2

• Sensor Technology: Optical Linear Encoder

Description: PHOTODIODE, SIC UV , A=0.06MM2, TO18; No. of Pins:2Pins; Diode Case Style:TO-18; Wavelength of Peak Sensitivity:300nm; Angle of Half Sensitivity ±:-; Dark Current:0.2fA; Operating Temperature Min:-55°C; Operating Temperature RoHS Compliant: Yes

Description: PHOTODIODE, SIC UV, A=1.0MM2, TO18; No. of Pins:2Pins; Diode Case Style:TO-18; Wavelength of Peak Sensitivity:300nm; Angle of Half Sensitivity ±:-; Dark Current:3.4fA; Operating Temperature Min:-55°C; Operating Temperature Max:170°C;RoHS Compliant: Yes

Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC &

• Spectral Response Range: 315 to 395 nm
• Operating Temperature: -25 to 85 C
• Photodiode Package: Leaded, Through Hole Technology (THT)
• Photodiode Spectral Response: UV

Description: PHOTODIODE, SIC UV-C, A=1.0MM2, TO18; No. of Pins:2Pins; Diode Case Style:TO-18; Wavelength of Peak Sensitivity:270nm; Angle of Half Sensitivity ±:-; Dark Current:3.4fA; Operating Temperature Min:-25°C; Operating Temperature RoHS Compliant: Yes

Description: PHOTODIODE, SIC UV-A, A=1.0MM2, TO18; No. of Pins:2Pins; Diode Case Style:TO-18; Wavelength of Peak Sensitivity:335nm; Angle of Half Sensitivity ±:-; Dark Current:3.4fA; Operating Temperature Min:-55°C; Operating Temperature RoHS Compliant: Yes

Description: General use for medium aperture pulsed lasers

• Spectral Response Range: 150 to 3,000 nm
• Active Area Diameter or Length: 24 mm
• Active Area Height: 24 mm
• Photodiode Spectral Response: IR, UV, Visible

Description: UV Sensor UV Sensor (UVS) Capella's Ultraviolet light sensor (UV Sensor, UVS) is an integrated light sensing solution measuring light in the UVA/UVB spectrums. It incorporates a photodiode, amplifiers, and analog/digital circuits into a single chip by a CMOS

• Display Type: None

Description: SENSOR PHOTODIODE UV 5MM2

Description: the measurement of specific parts of the UV spectrum such as UVA, UVB or UVE / UV Index. For measurement of these individual parameters our UVS Series is required. A waterproof plug and socket cable connection facilitates easy installation. The snap-on sun shield protects the

• Wavelength Range: 280 to 400 nm
• Operating Temperature Range: -40 to 80 C

Description: PIN PHOTODIODE AMBIENT LIGHT SEN

• Wavelength Range: 530 nm
• Operating Temperature: -40 to 110 C

Description: The 818-UV/DB Low-Power UV Enhanced Silicon Photodetector is supplied with a NIST traced calibration report that details individual detector responsivity measured with and without attenuator. Exclusive removable OD3 attenuator (Model 884-UVR) technology extends the calibrated optical

Description: large area 10 mm X 10 mm UV Enhanced Silicon (Si) photodiode, this slim optical sensor is ideal for laser and other optical power measurements in tight locations with busy setups. It is supplied with a NIST traced calibration report that details individual detector responsivity