VHF UHF Transistor

Description: Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters

Description: The Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters

Description: Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio

Description: JFET-N-CH UHF/VHF AMP

Description: Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors

Description: TRANS NPN BIPO VHF-UHF SSFP

• Polarity: NPN
• Features: Other

Description: TRANS NPN BIPO VHF-UHF MCP

• Polarity: NPN
• Features: Other

Description: TRANS NPN BIPO VHF-UHF MCP4

• Polarity: NPN

Description: TRANS NPN VHF/UHF 25V SOT-723

• Polarity: NPN
• Features: Other

Description: Bipolar Transistors - BJT NPN VHF/UHF AM

• Features: Bipolar RF Transistors

Description: VHF/UHF NPN SILICON TRANSISTOR

• I_C(max): 50 milliamps
• V_CEO: 15 volts
• Operating Frequency: 600 MHz
• Output Power: 0.225 watts

Description: NPN VHF/UHF Transistor SOT-23

• Number of Transistors in the Chip: 1
• Features: General Purpose BJT, Other
• Polarity: NPN
• Package Type: SOT23

Description: UHF/VHF MIXER NPN TRANSISTOR

• Packing Method: Bulk Pack
• Features: General Purpose BJT, Other

Description: UHF Oscillator and VHF Mixer NPN Transistor

• Polarity: NPN
• Features: Other
• Package Type: TO-220
• Packing Method: Tape Reel

Description: TRANS NPN VHF/UHF SS 25V TO92

• Features: General Purpose BJT, Other

Description: TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS) Product overview: 2SC3120 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and

• Features: Bipolar RF Transistors

Description: IC TRANS RF HF/VHF/UHF

• Power Gain: 23.5 dB
• Operating Frequency: 30 MHz
• Features: MOSFET, MOSFET RF Transistors, Other
• Polarity: N-Channel

Description: This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits high performance up to 250 MHz.

• Power Gain: 23 dB
• Output Power: 100 watts
• Operating Frequency: 1.8 to 250 MHz
• Features: Other

Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V

• Features: Other
• Package Type: SOT23
• Packing Method: Tape Reel

Description: The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1-500 . All devices are 100%

• Power Gain: 11 dB
• Output Power: 200 watts
• Operating Frequency: 1 to 500 MHz
• Features: Other, Power MOSFET

Description: is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.

• Frequency Range: 0 to 6,000 MHz
• Maximum Gain: 19.3 dB
• Output Power( P_1dB): 20.5 dBm
• Noise Figure: 5.5 dB

Description: Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier. See the attached MMG3014 datasheet for more specific information.

• Frequency Range: 40 to 4,000 MHz
• Maximum Gain: 19.5 dB
• Output Power( P_1dB): 25 dBm
• Noise Figure: 5.7 dB

Description: UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD Product overview: 2SC4184 from NEC Corporation is a Clock and Timing IC for clock generation, timing distribution, synchronization, RF systems, communication hardware, and digital boards. It is useful

Description: for consideration, but not guaranteed. This amplifier is suitable use as a broadband PA building block in target markets and related end applications for electronic attack, digital communications, and test and measurement in the UHF / VHF frequency bands. This compact module utilizes