This chapter summarises the most relevant results andconclusions that have been presented throughout the book.

Chapter 2 focused on the characterisation and modelling of the FGMOS transistor. From the analysis introduced in this chapter, the FGMOS transistor can be seen as a MOS transistor with the following characteristics:

1. Multiple inputs (as many as there are input capacitors).

2. Output resistance strongly dependent on the ratio between the capacitive coupling between the FG and the drain terminal and the total capacitance seen by the FG. The smaller this ratio, the larger the output resistance is.

3. Reduced effective transconductance, which is scaled down by the effective input weight.

The first characteristic can be considered as an advantage with respect to the normal MOS transistor, whereas the reduction in the output resistance and transconductance may, in certain situations, represent drawbacks.

The secondpart of the chapter describedsome of the initial issues that designers encounter when starting to work with FGMOS devices, as well as solutions to them. The main two problems observedwere as follows:

1. The foundries do not provide models to simulate the FGMOS.

2. There is an unknown amount of charge that can remain trappedat the FG during the fabrication process.

A very simple technique that does not require special device modelling to simulate the device was explained and compared with other existing methods that do needto model the transistor beforehand. Also, different techniques to control the charge at the FG were reviewed, together with a very simple layout technique, consisting of adding a contact...