Fundamentals of Modern VLSI Devices

| Description | Symbol | Value and unit |
|---|---|---|
| Electronic charge | q | 1.6 10 19 C |
| Boltzmann s constant | k | 1.38 10 23 J/K |
| Vacuum permittivity | ? 0 | 8.85 10 14 F/cm |
| Silicon permittivity | ? si | 1.04 10 12 F/cm |
| Oxide permittivity | ? ox | 3.45 10 13 F/cm |
| Velocity of light in vacuum | c | 3 10 10 cm/s |
| Planck s constant | h | 6.63 10 34 J-s |
| Free-electron mass | m 0 | 9.1 10 31 kg |
| Thermal voltage ( T=300 K) | kT/q | 0.0259 V |
| Angstrom |
| 1 =10 8 cm |
| Nanometer | nm | 1 nm=10 7 cm |
| Micrometer (micron) | m | 1 m=10 4 cm |
| Millimeter | mm | 1 mm=0. 1 cm |
| Meter | m | 1 m=10 2 cm |
| Electron-volt | eV | 1 eV= 1.6 10 19 J |
| Energy=charge voltage | E=qV | Joule= Coulomb Volt |
| Charge=capacitance voltage | Q=CV | Coulomb= Farad Volt |
| Power=current voltage | P =IV | Watt= Ampere Volt |
| Time .= resistance capacitance | t =RC | second= ? (ohm) Farad |
| Current=charge/time | I=Q/t | Ampere= Coulomb/ second |
| Resistance=voltage/current | R=V/I | ? (ohm)= Volt/ Ampere |