Microwave Field-Effect Transistors: Theory, Design, and Applications

Microwave Field-Effect Transistors Theory, Design, and Applications

Raymond S. Pengelly

NOBLE
Noble Publishing

Pengelly, Raymond S. (Raymond Sydney). 1948-
Microwave field-effect transistors : theory, design, and
Applications / by Raymond S. Pengelly. -- 3rd ed.
p. cm.
Includes bibliographical references (p. ) and index.

1-884932-50-9

1. Gallium arsenide semiconductors. 2. Metal semiconductor field-effect transistors. I. Title.
TK7871.15.3G3P46 1995
621.381 ?32 dc20

95-51185
CIP

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(770)939-0157

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1994 by Noble Publishing
All rights reserved. No part of this book may be reproduced in any form or by any means without written permission of the publisher. Contact the Permissions Department at the address above.

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International Standard Book Number 1-884932-50-9
Library of Congress Catalog Card Number

About the Author

Raymond Pengelly was born in Penzance, Cornwall, England in 1948. After studying at the Humphry Davy Grammar School he went to Southampton University, England where in 1969 he obtained an Honors Bachelors Degree in Physics. From 1969 to 1972 he was employed as a scientist at the former Plessey Electronics Systems Research Division at Roke Manor, Romsey, Hampshire where he did research work in high dielectric constant microstrip circuits from L-Band to X-Band. In 1973 he was awarded a Masters Degree in Electronics at Southampton University and in that same year married his wife, Alexandra. Ray continued to work at Roke Manor as a senior principal scientist where, together with advanced technology supplied...

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