The need for appropriate dosimetry was recognized soon after the discovery of ionising radiation, as it has a deleterious effect on the human body. It was not only the radiation hazard involved in the use of ionising radiation, but its controlled use in biology, industry, medicine, research, and military applications that required measurement of the radiation energy absorbed. The remarkable progress in the technology associated with devices and systems operating at room temperature has resulted in the occurrence of various semiconductor radiation dosimeters. Semiconductor nuclear detectors generally employ one of the number of device configurations (planar, sandwich, grid, etc.; Schlesinger et al. (2001)). Particular electrode geometries are especially important. They could function as electron-only devices (Luke, 1995; Parnham et al., 2001; Zhong et al., 1996) and devices that exploit small pixel effect (Eskin et al., 1999). Size of the collecting electrode can be adjusted for optimal performance for a particular mt (mobility-lifetime) product (Amman and Luke, 1997). Each of these electrode configurations may be used for applications where particular performance parameters are to be optimised (Schlesinger et al., 2001). The choice of material and the control of the deposition method (whether sputtering, evaporation, or electroless deposition) can affect the quality of the device, which is fabricated.

Mixing the different oxides in various proportions can control properties of semiconductor films (Arshak et al., 1984; Tominaga et al., 2000). The properties of SiO and indium oxide (In ₂O ₃) mixed thin films...