The possibility of using (TeO ₂) _{1 ? x}(In ₂O ₃) _x thin films (where x = 0 and 10 per cent by weight) as a sensitive material for ?-radiation was explored. Thin film pn-junctions and samples having contacts with a planar structure were fabricated using a thermal vacuum evaporation technique. These samples were exposed to a ⁶⁰Co ?-radiation source at a dose rate of 6 Gy/min. The current-voltage characteristics for as-deposited and irradiated samples were recorded and compared.

Samples with 90 per cent of TeO ₂ and 10 per cent of In ₂O ₃ with electrical contacts having planar structure exhibited ten times higher increase in the value of normalised current with the increase in radiation dose compared to the samples with pure TeO ₂. Up to a certain level of radiation dose, the samples showed an increase in the values of current. The regions of linear response may be considered as a working region for dosimetry purposes.

It was experimentally demonstrated that it is possible to fabricate a device that would satisfy the requirement of particular application, in this case the sensitivity to ?-radiation exposure. The electrical properties of the films are highly dependent on type and the composition of the oxide materials.

The fabricated samples in this study might be considered as a basis for compact and inexpensive systems for personal dosimetry.