Tellurium Dioxide (TeO ₂) and its mixture with indium Oxide (In ₂O ₃) were used in this study. TeO ₂ belongs to the category of compounds in which all the atoms are the so-called p-elements, having non-bonding valence electron pairs (Champarnaud et al., 2000). In ₂O ₃ is normally regarded as a reasonably highly conducting oxide (Al-Dhhan and Hogarth, 1987). Little, if any, information is available about properties of TeO ₂/In ₂O ₃ mixture in amorphous thin film form.

An Edwards E306A vacuum thermal coating system was used for thin films deposition. This system contains an Edwards FTM5 quartz crystal to monitor the rate of film deposition and to measure the film thickness. The quartz crystal was positioned directly above the evaporation source. The mass deposited on the quartz crystal during the evaporation alters its natural frequency of vibration. This frequency change was recorded on the meter of the film thickness monitor connected to the quartz crystal. Thus the monitor could record both the thickness and the rate of deposition corresponding to a particular frequency shift.

The electrical properties of the oxide thin films ((TeO ₂) _{1 ? x}(In ₂O ₃) _x, where x = 0 and 10 per cent by weight) and their changes under the influence of ?-radiation were investigated. Planar configurations having structure shown in Figure 1 were fabricated. Two layers of aluminium having a thickness of 100...