TABLE OF CONTENTS Figure 3 shows the plots of current-voltage characteristics that were recorded for as-deposited and ?-irradiated TeO 2 thin film samples with contacts having planar structure. The exposed dose was increased in steps of 18 Gy. The value of the current was observed to increase with the increase in the radiation dose up to a level of 72 Gy.
Figure 4 shows the dependence of the normalized current ( I ? I 0)/ I 0 versus radiation dose under an applied voltage of 2 V for TeO 2 thin films.
Figure 5 shows the plots of current-voltage characteristics that were recorded for as-deposited and ?-irradiated (TeO 2) 0.9(In 2O 3) 0.1 thin film samples. As one can see, the response on these devices to ?-irradiation is obviously more pronounced. This indicates that mixture of oxide materials is more sensitive to ?-rays exposure. The irradiation in this case generates more charge carriers that results in a bigger increase in values of current. Moreover, samples with 90 per cent of TeO 2 and 10 per cent of In 2O
