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Supplier: Richardson RFPD
Description: Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro
- Transistor Type: IGBT
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Supplier: Thor Power Corporation
Description: The front end of the drive electronics consists of a Power Factor Corrector (PFC) running at 57 kHz. Running in a Boost configuration, this PFC circuit converts the input AC line voltage to 375Vdc while maintaining a very high power factor (0.997 to 0.999, measured, Yokogawa 1600 Power
- AC Input Phase: Three Phase
- Application Categories: High Frequency Drive
- Drive Type: AC Synchronous Motor, AC Servo / Brushless Motor
- Features: Other
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Supplier: Coilcraft, Inc.
Description: Designed for transformer coupled MOSFETand IGBT gate drive circuits Specified by Texas Instruments for its POE+PHYTEREV-I/-E evaluation board Specified by Microsemi for its PD70211EVB51F-12 evaluation board Operating frequency from 50 kHz to 2 MHz Space saving surface mount
- Core Type: Toroidal Core, Other
- Operating Temperature: -40 to 125 C
- Package Type: Surface Mount Technology (SMT)
- Packing Method: Tape Reel
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Supplier: Infineon Technologies AG
Description: 600 V IGBT with anti-parallel diode in TO-252-3 package The RC-Drives 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for sensitive consumer drives market. Summary
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Switching Speed: 2 to 20 kHz
- VCE(on): 600 volts
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Supplier: Infineon Technologies AG
Description: 600 V IGBT with anti-parallel diode in TO-252-3 package The RC-Drives 600 V, 10 A hard-switching TRENCHSTOP™ IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for sensitive consumer drives market. Summary
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Switching Speed: 2 to 20 kHz
- VCE(on): 600 volts
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Supplier: Infineon Technologies AG
Description: RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. Summary of Features
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Switching Speed: 2 to 20 kHz
- VCE(on): 600 volts
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Supplier: Infineon Technologies AG
Description: 600 V IGBT with anti-parallel diode in TO-252 package The RC-Drives Fast 600 V, 15 A hard-switching TRENCHSTOP™ IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for consumer drives market. Summary of
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Switching Speed: 4 to 30 kHz
- VCE(on): 600 volts
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Supplier: Littelfuse, Inc.
Description: D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that
- Transistor Type: IGBT
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Supplier: Broadcom Inc.
Description: The HCPL-T250 gate drive optocoupler contains GaAs LED. The LED is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage
- Isolation Voltage: 3750 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -20 to 85 C
- Optocoupler Input: AC, DC
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Supplier: Broadcom Inc.
Description: The HCPL-315J gate drive optocoupler consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of
- Collector Emitter Breakdown Voltage: 3 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 100 C
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Supplier: Broadcom Inc.
Description: The HCPL-3150 gate drive optocoupler consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of
- Collector Emitter Breakdown Voltage: 5 volts
- Mounting Option: Surface Mount, Flat Pack
- Operating Temperature: -40 to 100 C
- Optocoupler Input: DC
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Supplier: Coilcraft CPS
Description: • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and 2011, isolation between secondaries is 500 Vdc.
- Core Type: RM
- DCR: 1.5 ohms
- Operating Frequency Range: 50000 to 2.00E6 Hz
- Operating Temperature: -55 to 125 C
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Supplier: Littelfuse, Inc.
Description: The SixPack series utilizes rugged and short circuit XPT igbts and fast switching SONIC diodes for motor drive inverters or active front end rectifieres.
- Package Type: Other
- VCES: 1200 volts
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Supplier: Allen-Bradley / Rockwell Automation
Description: PowerFlex70 AC Configured Drive, 480 VAC, 3 PH (D), 22 Amps (022), 15 HP Normal Duty, IP65 / NEMA 4 Indoor (D), LCD Display, Full Numeric Keypad (3), Brake IGBT Installed (Y), Without Drive Mounted Brake Resistor (N), Second Environment Filter per CE EMC directive (89/336/EEC)
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Supplier: ams
Description: The AS3635 is a highly integrated photoflash charger with build in IGBT driver. A build in 5V charge-pump guaranties constant IGBT drive at any battery voltage. The build in timer turns off the charge-pump 20 seconds after charging. In circuit fuse trimming allows to set
- Form Factor: Integrated Circuit (IC)
- Input Voltage: 2.5 to 5.5 volts
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Description: MORNSUN power module for IGBT/SiC gate driver adopts the mode of common ground outputs internally for better energy provision of IGBT driver's turn-on and turn-off. Meanwhile, this IGBT driver power supply features output short-circuit protection, which can be widely used
- DC Input Voltage: 12 volts
- DC Output Current: -40 to 80 amps
- DC Output Voltage: -8.7 to 15 volts
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Supplier: Coilcraft, Inc.
Description: Designed for transformer coupled MOSFET and IGBT gate drive circuits Operating frequency from 50 kHz to 2 MHz Industry standard EP5 surface mount package RoHS-compliant. 260°C compatible. Tin-silver over tin over nickel over phos bronze terminations
- Construction: Toroidal Core, Other
- Cooling Method: Dry-type / Air Cooled
- Operating Temperature: -40 to 125 C
- Standards / Compliance: RoHS Compliant, MIL-STD
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Description: IGBT GATE DRIVE IC
- Operating Temperature: -40 to 125 C
- Package Type: SSOP
- Supply Voltage: Other
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Supplier: Acme Chip Technology Co., Limited
Description: Half Bridge (3) Driver AC Motors IGBT 21-SIP
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Supplier: LIXINC Electronics Co., Limited
Description: ISOLATED COMPACT IGBT GATE DRIVE
- Driver Type: Dual Gate Driver (Half-bridge)
- Fall Time: 8 ns
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
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Supplier: Analog Devices, Inc.
Description: Product Details The ADuM4135 is a single-channel gate driver specifically optimized for driving insulated gate bipolar transistors (IGBTs). Analog Devices, Inc., i Coupler® technology provides isolation between the input signal and the output gate drive. The ADu
- Driver Type: High-side Gate Driver
- IC Package Type: SOIC
- Number of Output Channels: 1
- Operating Temperature: -40 to 125 C
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Supplier: Rochester Electronics
Description: FOD8333 - Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, Active Miller Clamp, and Automatic Fault Reset
- Form Factor: Integrated Circuit (IC)
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1190456-MC3PHACVDWE Category: Integrated Circuits (ICs)>PMIC - Motor Drivers, Controllers Package: Tube Applications: General Purpose Standard Package: 26 Mounting: SMD (SMT) Technology: IGBT Function: Controller - Commutation, Direction
- Operating Temperature: -40 to 105 C
- Supply Voltage (AC): 4.5 to 5.5 volts
- Supply Voltage (DC): 4.5 to 5.5 volts
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Supplier: Nexperia B.V.
Description: -off losses, and has a short circuit withstand time of 5 µs. This hard-switching 600 V, 30 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications. Features and benefits Collector current (IC) rated at 30 A
- Package Type: Other
- Transistor Grade / Operating Range: Industrial
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Supplier: RS Components, Ltd.
Description: This range of IGBT modules from HY Electronic come in industry standard packages with soldering pins designed for PCB mounting. Suitable applications for these IGBT modules include, inverters for motor drives, AC and DC servo drive amplifiers and non-interruptible power
- Polarity: N-Channel
- Transistor Type: IGBT
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Supplier: Vincotech (Germany) GmbH
Description: Brake Chopper Complete Bootstrap Circuit Emitter Shunts Gate Drive for Brake Inverter Open Emitter configuration Temperature sensor Easy paralleling Low turn-off losses Low collector emitter saturation voltage
- Output Current: 15 amps
- Output Voltage: 1200 volts
- Technology: IGBT, Intelligent Power Module (IPM)
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Supplier: ROHM Semiconductor USA, LLC
Description: The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Number of Output Channels: 1
- Operating Temperature: -40 to 125 C
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Supplier: Qorvo
Description: This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives
- IC Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true
- Package Type: Other
- Transistor Grade / Operating Range: Automotive
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Supplier: Renesas Electronics Corporation
Description: -Channel device can turn off effectively when VsubL/sub goes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VsubL/sub to a moderate negative potential.
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Supplier: RS Components, Ltd.
Description: Murata MGJ Series of isolated DC-DC converters offer an ideal solution for high side & low side gate drive circuits for IGBTs & MOSFETS in bridge circuits. The MGJ Series offers a choice of asymmetric output voltages and enables your application to optimise drive
- Input Voltage (VIN): 9 to 18 volts
- Output Current (IOUT): 0.3000 amps
- Output Power: Over 1.5 watts
- Output Voltage (Volt): -5 to 15 volts
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Supplier: RS Components, Ltd.
Description: . Double driver for half-bridge IGBT modules. CMOS compatible inputs. Short circuit protection by VCE monitoring and switch off. Drive interlock top / bottom. Isolation by transformers. Supply under voltage protection (13V). Error latch / output Number of Drivers = 2 Maximum
- Device Type / Applications: Other
- TJ: -40 to 85 C
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commercial appliances. This IC takes up to 5 A (continuous) output current. It can withstand voltages of up to 600 V (IGBT breakdown voltage). Categories: Integrated Circuits (ICs) > PMIC - Full, Half-Bridge Drivers Packaging: Tube Part Status: Active (read more)
Browse IC Interfaces Datasheets for VAST STOCK CO., LIMITED -
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives (read more)
Browse IC Interfaces Datasheets for Qorvo -
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives (read more)
Browse IC Interfaces Datasheets for Qorvo -
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives (read more)
Browse IC Interfaces Datasheets for Qorvo -
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives (read more)
Browse IC Interfaces Datasheets for Qorvo -
The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use (read more)
Browse RF Transistors Datasheets for Qorvo -
The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use (read more)
Browse RF Transistors Datasheets for Qorvo -
UJ4SC075009B7S is an AEC-Q101 Qualified 750 V, 9 m? Gen 4 SiC FET. Its distinctive stacked cascode circuit configuration integrates a normally-on SiC JFET alongside a Si MOSFET, resulting in a (read more)
Browse RF Transistors Datasheets for RFMW
Conduct Research Top
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Gate Drive Optocoupler Provides Robust Insulation in IGBT Destructive Tests
Avago Technologies gate drive optocouplers are used extensively to drive IGBTs in applications such as motor drives and solar inverters. Optocouplers are a proven technology to provide reinforced galvanic insulation for high voltage protection between IGBTs and control circuits. They are also used
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EiceDRIVER TM and CoolMOS TM CFD2 Join for High Efficiency in Refrigeration
Home appliances, which run 24h and 7 days a week, have high efficiency requirements. Therefore, the use of MOSFETs is preferred over IGBTs. Modern MOSFET technologies based on the superjunction principle are nevertheless difficult to control in motor drive applications. This article describes
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A Novel Driving and Protection Circuit for Reverse-Blocking IGBT Used in Matrix Converter
The proposed RB- IGBT drive circuit is designed aiming at reducing switching transitions while restricting di/dt of Ic and dv/dt of Vce.
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A new driving circuit for IGBT devices
Schematic circuit of the IGBT driving circuit .
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Research on Overcurrent Protection of IGBT by EXB841--《JOURNAL OF TAIYUAN UNIVERSITY OF TECHNOLOGY》1999年06期
;Analysis on the Performance of IGBT Driving Circuit [J];POWER ELECTRONICS;1998-03 .
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Renovation of medium capacity transit system traction electronics at Taipei rapid transit system
Since the gates of the four IGBTs in a bridge circuit are at different voltage levels it takes four DCDC converter modules for each IGBT drive circuit although the power consumption is very small.
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Optimum driving circuit for IGBT devices suitable for integration
Figure 2 Schematic circuit of an IGBT driv- ing circuit .
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Emerging Materials and Mechanics Applications
The designing include sub-modules based on DSP such as the sampling signal circuit, the control circuit for external characteristics, the PWM (Pulse-Width -Modulation) control circuit of SAW power, the IGBT drive circuit and etc.
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Using NEC Optocouplers as Gate Drivers in IGBT and Power MOSFET Applications
Based on this characteristic, if the VCC–VEE power supply voltage of the PS9552 drops below VUVLO– (9.5 to 12 V) due to some anomaly in the IGBT drive circuit , the VO output of the PS9552 becomes low level in approximately 0…
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An Enhanced Drive Circuit for IGBTs Include Short Circuit Protection--《JOURNAL OF SOUTH-CENTRAL COLLEGE FOR NATIONALITIES(NATURAL SCIENCES)》1996年04期
;Analysis on the Performance of IGBT Driving Circuit [J];POWER ELECTRONICS;1998-03 .
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Research on stage lighting control technology based on sine wave
B. IGBT driving circuit design .
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An improved circuit based on EXB841 applicable to IGBT induction heating power
Simulation results proved that the improved circuit overcome the shortcomings of EXB841, and modifY the performance of IGBT driving circuit .