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Supplier: RFMW
Description: The RF3183 is a high power amplifier module with integrated power control. The input and output terminals are internally matched to 50â?¦. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The
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Supplier: RFMW
Description: The RF5616 is a linear, medium-power, high-efficiency power amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. It is also designed to meet IEEE802.11a, IEEE802.11n, IEEE802.16e (4.9GHz to 5.850GHz
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Description: High efficiency, internal voltage regulator
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 23600 to 26500 MHz
- Gain Flatness: 1.25 dB
- Input VSWR: 2 :1
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Supplier: RFMW
Description: The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general
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Supplier: RFMW
Description: The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini-PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction
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Description: High efficiency, internal voltage regulator included, small hermetic units
- Amplifier Type: Power Amplifier
- Frequency Range: 7250 to 7750 MHz
- Gain Flatness: 0.5000 dB
- Input VSWR: 2 :1
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Supplier: Emhiser Research, Inc.
Description: . Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: . Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: . Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: . Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Richardson RFPD
Description: The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA supports
- Amplifier Type: Power Amplifier
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Supplier: Richardson RFPD
Description: The SKY66293-21 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 3400 to 3800 MHz. The active biasing circuitry is
- Amplifier Type: Power Amplifier
- Frequency Range: 3400 to 3800 MHz
- Maximum Gain: 35 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: SKY66295-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 800 to 900 MHz. The active biasing circuitry is integrated to
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 900 MHz
- Maximum Gain: 34 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: WBPA1016A is integrated with WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum high power, wide bandwidth, high linearity, and unconditional stable performances
- Amplifier Type: Power Amplifier
- Frequency Range: 1000 to 1600 MHz
- Maximum Gain: 27 dB
- Maximum Operating Voltage: 12 volts
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Supplier: Broadcom Inc.
Description: ALM-81224 is a high linearity variable-gain amplifier module for use in the 1450-2750MHz band. Gain control is achieved using a single DC voltage input pin, and High linearity is achieved through the use of Avago Technologies' proprietary GaAs Enhancement-mode pHEMT
- Amplifier Type: Other
- Applications: Mobile / Wireless Systems
- Frequency Range: 1450 to 2750 MHz
- Maximum Gain: 27 dB
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Supplier: AR Modular RF
Description: The Model AR-50 (KMW1035) is a portable, lightweight, fully automatic band-switching RF booster amplifier for multi-band VHF/UHF Tactical Radio equipment employing legacy, proprietary and emerging waveforms. The amplifier covers the frequency band of 30-512 MHz using six
- Amplifier Type: Low Noise Amplifier, Power Amplifier, Other
- Applications: Military / Defense, SATCOM Amplifier
- Frequency Range: 30 to 512 MHz
- Input VSWR: 1.5 :1
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from a single
- Amplifier Type: Power Amplifier
- Frequency Range: 5100 to 5900 MHz
- Maximum Gain: 33 dB
- Minimum Gain: 33 dB
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Supplier: AR Modular RF
Description: The Model AR-35 is a portable, lightweight, waterproof, fully automatic band-switching RF booster amplifier for multi-band VHF/UHF Tactical Radio equipment employing legacy, proprietary and emerging waveforms. The amplifier covers the frequency band of 30-512 MHz using six
- Amplifier Type: Power Amplifier, Other
- Applications: Military / Defense, SATCOM Amplifier
- Frequency Range: 30 to 512 MHz
- Input VSWR: 1.5 :1
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Supplier: Win Source Electronics
Description: Manufacturer: RF Micro Devices Win Source Part Number: 088151-RF5110G Packaging: Reel - TR Frequency: 800MHz to 950MHz Gain: 32dB RF Type: GSM, GPRS Categories: RF/IF and RFID Status: Active Case / Package: 16-QFN (3x3) Supply Voltage - Operating: 2.7 V to 4
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 800 to 950 MHz
- Maximum Gain: 32 dB
- Minimum Gain: 32 dB
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Supplier: ValueTronics International, Inc.
Description: The 1000L is a 220 MHz 1000 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Amplifier Type:
- Frequency Range: 220 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
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Supplier: ROHM Semiconductor GmbH
Description: applications due to low noise and low distortion characteristics and are usable for other many applications by wide operating supply voltage range. BA4558R / BA4560R / BA4564R / BA4580R / BA4584R / BA8522R / BA2115 are high-reliability products with extended operating temperature range
- Device Type: Operational Amplifiers
- Operating Range: Commercial
- Package Type: SOP
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: applications due to low noise and low distortion characteristics and are usable for other many applications by wide operating supply voltage range. BA4558R / BA4560R / BA4564R / BA4580R / BA4584R / BA8522R / BA2115 are high-reliability products with extended operating temperature range
- Device Type: Operational Amplifiers
- Operating Range: Commercial
- Package Type: SOP
- RoHS Compliant: Yes
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Supplier: Custom MMIC
Description: 1.8 dB. The CMD270 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching. The CMD270 offers full passivation for increased reliability and moisture protection. Features Ultra low noise figure High gain broadband performance
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 4000 to 8000 MHz
- MMIC Technology Required: Yes
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Supplier: Renesas Electronics Corporation
Description: The ISL99201 is a fully integrated high efficiency class-D mono amplifier. It is designed to maximize performance for mobile phone applications. The application circuit requires a minimum requirement of external components and operates from a 2.4V to 5.5V input supply. It is capable of
- Device Type: Audio Amplifiers
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Supplier: Skyworks Solutions, Inc.
Description: The SKY66288-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for the unlicensed spectrum of LTE-advanced small-cell base stations operating from 5150 to 5925 MHz. The active biasing
- Amplifier Type: Power Amplifier
- Frequency Range: 5150 to 5925 MHz
- Maximum Gain: Over 30 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC490LP5(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5(E) provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5V supply voltage. This versatile amplifier
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 12000 to 16000 MHz
- Maximum Gain: 27 dB
- Minimum Gain: 27 dB
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Supplier: Samsung Electro-Mechanics
Description: due to temperature or passage of time, and have high efficiency and less power consumption, they are mainly used for impedance matching in RF circuits. General Features High Q and low ESR in high frequency range Tight tolerance available High efficiency
- Applications: High Frequency
- Capacitance Range: 2.00E-7 to 220 microF
- DC Rated Voltage Range (WVDC): 25 to 250 volts
- Electrostatic Capacitors: Ceramic
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Supplier: Infineon Technologies AG
Description: The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 50 to 10000 MHz
- Noise Figure: 0.4000 dB
- Nominal Operating Current: 0.0021 to 0.0250 amps
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Supplier: Analog Devices, Inc.
Description: Product Details The LT1225 is a very high speed operational amplifier with excellent DC performance. The LT1225 features reduced input offset voltage and higher DC gain than devices with comparable bandwidth and slew rate. The circuit is a single gain stage with outstanding
- Device Type: Operational Amplifiers
- RoHS Compliant: Yes
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Supplier: Maxim Integrated
Description: 11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data. Each device includes dual high-side current-sense amplifiers to monitor the MESFET drain currents through the voltage
- Form Factor / Package: Surface Mount Technology (SMT)
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Supplier: Maxim Integrated
Description: attenuator is controlled using an external voltage or through the SPI™-compatible interface using an on-chip 8-bit DAC. Because each stage has its own RF input and RF output, this component can be configured to either optimize NF (amplifier configured first), or OIP3
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 50 to 1000 MHz
- Maximum Gain: 21.9 dB
- Noise Figure: 4 dB
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Supplier: AR RF/Microwave Instrumentation
Description: the RF input level to the RF amplifier first stage when the RF input level is increased above 0dBm. The RF amplifier stages are protected from over-temperature by removing the DC voltage to them if an over-temperature condition occurs due to cooling
- Frequency Range: 0.1000 to 1000 MHz
- Output Power( P1dB): 56.99 dBm
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Supplier: Infineon Technologies AG
Description: BGA7P320 driver amplifier The BGA7P320 is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance
- Actuator Voltage: 3.3 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 010797-BA4580RF-E2 Packaging: Reel - TR Number of Circuits: 2 Mounting: SMD (SMT) Amplifier Type: General Purpose Slew Rate: 5 V/µs Current - Input Bias: 100nA Voltage - Input Offset: 300µV
- Device Type: Buffer, Instrumentation Amplifiers, Operational Amplifiers
- Package Type: SOP, Other
Find Suppliers by Category Top
Featured Products Top
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Skyworks is pleased to introduce a complete family of high-efficiency power amplifiers (PAs) designed for the stringent requirements of enterprise small cell radios. These devices offer wide instantaneous bandwidth with high gain and are fully input/output matched. Active biasing (read more)
Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc. -
Automotive-grade isolation products bridge the high & low voltage vehicle systems for intelligent communication and control. Learn More (read more)
Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc. -
STMicroelectronics' TSV792 is a dual 50 MHz bandwidth unity gain stable amplifier. The rail-to-rail input stage and the slew rate of 30 V/μs make the TSV792 ideal for low-side current measurement. The excellent accuracy provided by a maximum input voltage of 200 μV allows (read more)
Browse RF Amplifiers Datasheets for DigiKey -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
DC-coupled Wideband High Voltage Constant Voltage Power Amplifier Constant voltage amplifiers provide a steady output voltage independent of the variations of load and input power line. Our customers use our constant voltage amplifiers to generate magnetic fields (read more)
Browse Power Amplifiers Datasheets for Amp-Line Corp. -
to indicate the RMS value of the two voltage extremes on the line. Commonplace but pretty much gone in the RF industry by the 1990s, a bolometer fed with RF would be warmed by the RF resulting in a change in resistance in one arm of a bridge. The output of the bridge gave the RMS value of (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
sensitivity by at least 20 dB. All of A.H. Systems' Preamplifiers come with a 12-volt DC regulated power source. A low voltage indicator confidently allows you to power the amplifier with your own external 12-volt DC battery. This makes it a convenient choice for field measurements. (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
The DLPVA-101-B, -F and -BLN models have significantly lower noise, in some cases by an order of magnitude lower, while the range of functions and operation remain identical. Features include: Voltage amplifiers with switchable Gain up to 100 dB (x 100 (read more)
Browse Instrumentation Amplifiers Datasheets for Electro Optical Components, Inc. -
B. All of A.H. Systems' Preamplifiers come with a 12-volt (or 15-volt) DC regulated power source. A low voltage indicator confidently allows you to power the amplifier with your own external 12-volt DC battery. This makes it a convenient choice for field measurements. (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc. -
.H. Systems' Preamplifiers come with a 12-volt (or 15-volt) DC regulated power source. A low voltage indicator confidently allows you to power the amplifier with your own external 12-volt DC battery. This makes it a convenient choice for field measurements (read more)
Browse RF Amplifiers Datasheets for A.H. Systems Inc.
Conduct Research Top
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Using the TC1142 for Biasing a GaAs Power Amplifier
frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch.
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Schottky Mixer Feature High Dynamic Range
of the mixer. The signal for the RF port of the mixer is typically derived from a low noise amplifier (LNA) which ultimately comes from an antenna. The resulting intermediate frequency (IF) produced from mixing the two signals is then processed or possibly down converted again.
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Indicates content that may require registration and/or purchase.
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A novel RF vertical MOSFET for pulsed applications [UHF amplifier]
The need for a high voltage RF amplifier is evident in pulsed applications [3].
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DIFFERENTIAL SOIL IMPEDANCE OBSTACLE DETECTION
In that project initial tests are being performed with a high voltage RF amplifier circuit to replace the coupling transformer.
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CAPACITIVE TOMOGRAPHY FOR THE LOCATION OF PLASTIC PIPE
In order to solve this problem a solid-state high voltage RF amplifier , shown in Figure 4, was constructed using two APEX OP85 high voltage operational amplifiers.
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CAPACITIVE TOMOGRAPHY FOR THE LOCATION OF PLASTIC PIPE
In order to solve this problem a solid-state high voltage RF amplifier was constructed using two APEX OP85 high voltage operational amplifiers.
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Optical imaging of charged particle tracks in a gas. Final report
(3): The RF field is generated by a crystal controlled oscillator and high - voltage RF amplifier , rather than a damped tuned .
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Sonoluminescence bubble measurements using vision-based algorithms
Linear High Voltage RF Frequency Amplifier .
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Nevada Test Site-Directed Research, Development, and Demonstration
Oscillatory outputs from high - voltage RF amplifiers : (a) 600-V peak-to-peak, 13.5-MHz deflection voltage; (b) inputs and outputs from the two-channel RF, high-voltage amplifier after the transmission line and transformer were balanced .
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High Performance SON-LDMOS for RF Power Amplifier Application
It can be used in the future design of high voltage RF power amplifiers .
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Current monitor for the isis synchrotron RF cavity bias regulator
The synchrotron beam is accelerated using six, fundamental harmonic, ferrite loaded, RF cavities each having its own high voltage RF drive amplifier and bias system.
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Study of a variable output power supply for Magnetic Resonance Imaging RF amplifier
…low power condition, any extra voltage will lead to more voltage drop across the RF power MOSFET and that lead to more loss of the power device, while at high power condition the RF amplifier need high voltage dc bus to output…