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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET LOW-NOISE AMPLIFIER
- Transistor Type: MOSFET
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Supplier: Renesas Electronics Corporation
Description: The CA3240A and CA3240 are dual versions of the popular CA3140 series integrated circuit operational amplifiers. They combine the advantages of MOS and bipolar transistors on the same monolithic chip. The gate-protected MOSFET (PMOS) input transistors provide high input impedance and a
- Device Type: Operational Amplifiers
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Supplier: Microchip Technology, Inc.
Description: The DRF1200/01 hybrids integrate drivers, bypass capacitors and RF MOSFETs into a single package. Integration maximizes amplifier performance by minimizing transmission line parasitics between the driver and the MOSFET. The DRF1300 and DRF1301 have two independent channels, each
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The 2N4351 Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The 3N190 Series Monolithic-Duel, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-78 7L RoHS and Tested Die. All Linear Systems devices are available with
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Designers who used this product also designed with IRFI540N | N-Channel Power MOSFET IRS20957SPBF | Discrete Class D Audio Amplifier ICs IRFR9120N | P-Channel Power
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: DigiKey
Description: RF Mosfet
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 859 to 960 MHz
- Maximum Gain: 18 dB
- Minimum Gain: 18 dB
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Supplier: Lingto Electronic Limited
Description: OPERATIONAL AMPLIFIER W/MOSFET I
- Device Type: Instrumentation Amplifiers, Other
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Supplier: Infineon Technologies AG
Description: IRS2092SPBF | Discrete Class D Audio Amplifier ICs BSC057N08NS3 G | N-Channel Power MOSFET BSC070N10NS3 G | N-Channel Power MOSFET IRLML0030 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET IPAN70R360P7S | 500V
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: Amplifier ICs IR2011S | Gate Driver ICs IRFB7730 | N-Channel Power MOSFET IRFB4227 | N-Channel Power MOSFET IR2110S | Gate Driver ICs IRFB3306 | N-Channel Power MOSFET IRFP4668 | N-Channel Power MOSFET IRFB3307Z
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: Amplifier ICs SPD02N80C3 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFB52N15D | N-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF2804 | N-Channel Power MOSFET IRF3415 | N-Channel Power MOSFET IRF3710 | N
- Package Type: TO-220, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
- TJ: 175 C
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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Active
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Active
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compared to other MOSFET technologies optimized for switching applications. Additional Features High Current &>200V>100msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Audio Amplifiers 4 x 50 W MOSFET Quad Bridge Pwr Amplifier
- Device Type: Audio Amplifiers, Other
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Supplier: Rochester Electronics
Description: GAAS MOSFET AMPLIFIER
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The 3N170 Series Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS, SOT-143 4L ROHS, and Tested Die. All Linear Systems devices are
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The 3N165 Series Monolithic-Dual, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-99 8L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices are
- Polarity: P-Channel
- Transistor Type: MOSFET
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Description: GAAS MOSFET AMPLIFIER
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Supplier: DigiKey
Description: RF Mosfet LDMOS 2.3GHz ~ 2.7GHz 25W 20-PQFN (8x8)
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2300 to 2700 MHz
- Maximum Operating Voltage: 28 volts
- Minimum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: RF Mosfet LDMOS 2.5GHz ~ 2.7GHz 20W 20-PQFN (8x8)
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2500 to 2700 MHz
- Maximum Operating Voltage: 28 volts
- Minimum Operating Voltage: 28 volts
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Supplier: DigiKey
Description: RF Mosfet LDMOS 2.3GHz ~ 2.5GHz 20W 20-PQFN (8x8)
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2300 to 2500 MHz
- Maximum Operating Voltage: 28 volts
- Minimum Operating Voltage: 28 volts
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Supplier: VAST STOCK CO., LIMITED
Description: Audio Amplifiers Class D Audio Driver high speed MOSFET
- Device Type: Audio Amplifiers, Other
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Supplier: RFMW
Description: Amplifier, MOSFET Module, 0.44 - 0.52GHz, 44.8dBm, 12.5V
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Supplier: RFMW
Description: Amplifier, MOSFET Module, 0.136 - 0.174 GHz, 12.5V
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Supplier: Acme Chip Technology Co., Limited
Description: OPERATIONAL AMPLIFIER W/MOSFET I
- Life Cycle Stage: Other
- Package Type: Other
- Slew Rate (SR): 3.00E-5 V/µs
- Supply Voltage (VS): 4 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: TLR344FVJ is dual and quad CMOS operational amplifier with low supply voltage operation and full swing output. It is suitable for battery-operated equipment. The MOSFET input stageprovides low input bias current. It can be used for sensor applications.
- Device Type: Operational Amplifiers
- Operating Range: Commercial
- Package Type: TSSOP
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: BD5291FVE is Input/Output full swing single operational amplifier with low voltage operation. The input bias current is very small like as 1pA (Typ), since input stage has MOSFET structure. It is suitable for sensor amplifier.
- Device Type: Operational Amplifiers
- Operating Range: Commercial
- RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: OP-AMP; BiMOS, 15 MHz, MOSFET Input/CMOS Output, PDIP8, Pb-Free
- Device Type: Operational Amplifiers
- Package Type: PDIP
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Supplier: Visual Sound, Inc.
Description: Crest Audio, Inc. The CD Series amplifier is the next generation family of elevated efficiency amplification from Crest Audio. The CD Series combines a linear power supply and a Class D output to deliver Crest power in a compact and cost-effective package. This series is very versatile
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Supplier: Quarktwin Technology Ltd.
Description: Motor Driver Power MOSFET 48-QFPH-1414
- Package Type: QFP, Other
- RoHS Compliant: Yes
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Supplier: Emhiser Research, Inc.
Description: customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Allegro MicroSystems Inc.
Description: provided, allowing motors to be driven with block commutation or sinusoidal excitation. The power MOSFETs are protected from shoot-through by integrated crossover control and programmable dead time. Current in each half bridge can be measured using integrated current sense amplifiers.
- Configuration: IC / PCB-Mounted
- Drive Type: DC Brushless Motor
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Supplier: Accuris
Description: MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON
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, which is a circuit designed to limit the output voltage to a specific range. ALD’s SABMBOVP circuit board series protects from overvoltage by using very low-voltage precision enhancement-mode MOSFETs to improve the clamping function. ALD’s proprietary EPAD technology was (read more)
Browse Datasheets for Advanced Linear Devices, Inc. -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
coefficient, enhancement-mode (normally off). The MOSFET can be used in a variety of applications, including precision current mirrors, complementary push-pull linear drives, discrete analog switches, analog signal choppers, differential amplifier input stages, voltage comparators, data (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
determines the current flow between the drain and source terminals. And the MOSFET acts as an amplifier. Increasing the applied control voltage increases the width of the conducting channel and allows more current to flow between the output terminals (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for MDE Semiconductor, Inc. -
analog switch and dual buffer 300 mA/1.8 V LDO regulator, 1 A step-down DC-DC converter and operational amplifier Vishay Siliconix’s N-channel power MOSFET (Learn more (read more)
Browse Product Development Services Datasheets for TechInsights Inc.
Conduct Research Top
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Introduction to Analog Electronics
an analysis of DC, transistor biasing, small-signal single and multi-stage amplifiers (using BJTs, FETs, and MOSFETs), and the frequency response of transistors for single-stage and multi-stage amplifiers.
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Application Note: Output Inductor Selection for the AAT115X Series Buck Converter
input. The AAT115X peak current mode control loop senses the current flowing through the high-side P-channel MOSFET and compares it to the output of the voltage loop error amplifier. Sufficient sensed current slope is important for good noise immunity and a wide duty cycle dynamic range. Moreover
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Details surface about Intel's chip-set roadmap UMC still negotiating purchase of WSMC, but little progress made U.S. decides not to impose dumping duties on Taiwan NETsilicon earnings driven up by Y2K, but it's only for one quarter General Semiconductor's new power MOSFETs switch fast at low
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Performance of Ku-band on-chip matched Si monolithic amplifiers using 0.18-μm-gatelength MOSFETs
The amplifier showed a gain of 6–10 dB and a noise figure (NF) of 3.5–4 dB up to about 20 GHz, the highest gain and lowest NF yet reported for MOSFET amplifiers at this frequency.
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Scientific Charge-Coupled Devices
This is accomplished by dump- ing the charge onto a small capacitor connected to an output MOSFET amplifier .
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
Furthermore, the use of a voltage divider can significantly reduce the input resistance of a MOSFET amplifier stage.
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Blocking and desensitization in bipolar and MOSFET differential amplifiers
The dc characteristic of the asymmetrical differential MOSFET amplifier can be expressed as (2), shown at the bottom of the next page [9], where .
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Electronics for Guitarists
This is the reason that in most situations the common emitter BJT will produce much higher voltage gain than an equivalent common source JFET or MOSFET amplifier .
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RF Circuit Design 2nd Edition Complete Document
In general, the gain of a MOSFET amplifier increases when its gate voltage is increased.
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RF Power Amplifiers
Most of the parasitic capacitance, Cp (in both BJTs and MOSFETs amplifiers ) is an abrupt-junction capacitance.
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1968-1982 Cumulative Index IEEE Transactions on Consumer Electronics Guide to the Index
Denlinger, DavidE., + BTR-15Feb 6968-98 Amplifiers; cf. Audio amplifiers; Bipolar transistor amplifiers; Cable TV amplifiers; IF amplifiers; JFET amplifiers; MOSFET amplifiers ; Operational amplifiers; Power amplifiers; Power bipolar transistor amplifiers; Power FET amplifiers; Power transistor amplifiers; Television receiver amplifiers; Tuned amplifiers Amplitude …
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Piezoelectric Accelerometers with Integral Electronics
Keywords Corner frequency fc • Equivalent input noise voltage • FET-input amplifier: Equivalent noise circuit; JFET amplifier; MOSFET amplifier ; Noise analysis • FET 1/f noise: Empirical relations • FET shot noise • FET thermal noise • JFET noise • Hooge’s empirical …
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Extreme NXT
182 One MOSFET Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .