Discrete Reference Materials

Description: The 2N3904 is a general-purpose NPN bipolar junction transistor in a TO-92 package widely used for amplification and switching applications. This article covers the transistor's key specifications-40V ...

Description: The BAS16 is a high-speed switching diode in a SOT-23 package rated for 100V reverse voltage with a 4-nanosecond switching speed. Measuring 2.9mm ? 1.3mm and operating across a temperature range of ...

Description: The BC847 is an NPN bipolar junction transistor in a SOT-23-3 package designed for general-purpose amplification and switching applications. This article covers the BC847's key specifications (45V ...

Description: The 1N5921BRLG is a Zener diode manufactured by ON Semiconductor, designed primarily for voltage regulation applications. It features a nominal Zener voltage of 6.8 V, a maximum power dissipation of 3 ...

Description: The Infineon IRF3808PBF is a high-performance N-channel power MOSFET designed for efficient power management and switching applications. This article covers its key specifications including 75V ...

Description: The IRFIBE30GPBF is an N-channel power MOSFET manufactured by Infineon Technologies, designed for high-voltage switching applications up to 800V. This article provides comprehensive technical coverage ...

Description: The STPS30H60CG is a high-performance Schottky rectifier diode from STMicroelectronics designed for efficient power applications. With a 60V reverse voltage rating, 30A forward current capacity, and ...

Description: The Nexperia PHPT60603NYX is a high-power NPN bipolar transistor rated for 60 V maximum collector-emitter voltage and 3 A continuous collector current. This article covers its specifications, pinout ...

Description: The BZT52C3V3-E3-08 is a Zener diode from Vishay designed for voltage regulation and overvoltage protection in electronic circuits. Operating at a nominal Zener voltage of 3.3V (?5% tolerance) with ...

Description: The VN06SPTR-E is a high-side smart power solid-state relay from STMicroelectronics using VIPower technology for efficient power management. This monolithic driver delivers peak output currents up to ...

Description: Thermal runaway is a critical failure mechanism in power semiconductors where increasing device temperature causes higher power dissipation, creating a self-reinforcing cycle that can rapidly damage ...

Description: The FAN3121TMX-F085 is a high-speed, low-side gate driver IC from Onsemi designed to drive N-channel enhancement MOSFETs in switching applications. Operating from 4.5V to 18V, it delivers peak sink ...

Description: The MLX91221KDF-ABF-075-RE is a high-precision Hall-effect current sensor designed for contactless current measurement in automotive, industrial, and consumer electronics applications. Operating from ...

Description: This article provides a comprehensive technical guide to the FHP100N07 N-channel MOSFET, detailing its specifications, key features, and applications in power management, motor drives, and switching ...

Description: A comprehensive technical guide to the Fairchild BC557BTA PNP bipolar junction transistor. The article covers key specifications including a maximum collector-emitter voltage of 45V, continuous ...

Description: The STMicroelectronics STD45P4LLF6AG is a P-channel power MOSFET designed for efficient power management across automotive, industrial, and consumer electronics applications. Featuring a low on-state ...

Description: Comprehensive technical guide covering diode symbols, types, and applications. Explains the fundamental diode symbol (triangle pointing to a vertical line) representing anode and cathode polarity, ...

Description: Comprehensive guide to 547-series transistors covering NPN and PNP configurations, common variants (BC547, 2N3904, 2N2222, BC557, 2N3906, BC548, BF494, BD139), and detailed BC547 specifications. ...

Description: Bridge rectifiers are four-diode circuits that convert alternating current (AC) into pulsing direct current (DC) for power supplies, battery chargers, and industrial equipment. This article covers ...

Description: This article provides a comprehensive technical comparison of bridge rectifiers and full-wave rectifiers, two fundamental AC-to-DC conversion circuits. It explains the structural differences between ...

Description: This article provides a comprehensive guide to building full-wave rectifier circuits, explaining how they convert AC to pulsating DC current. It covers the two main types-center-tapped transformer and ...

Description: In this blog, we delve into the exciting realm of thyristors and transistors, unraveling their mysteries and guiding you through their fundamental differences. A Thyristor is a three-terminal, ...

Description: A thyristor is a solid-state semiconductor device containing four layers of alternating P-type and N-type materials. It is sometimes referred to as a silicon-controlled rectifier (SCR). As a bistable ...

Description: Field-effect transistors (FETs) are semiconductor devices that are widely used in electronic circuits for amplification, switching, and signal processing. They are a fundamental building block of ...

Description: MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a type of transistor. Transistors are electronic devices that control the flow of current in a circuit. They are fundamental building ...

Description: Learn how App Diode-inspired architectures limit data exposure and provide an additional layer of cybersecurity protection. ...

Description: IGBTs (Insulated Gate Bipolar Transistors) are electronic devices that combine the advantages of both MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar junction transistors ...

Description: Explore various diode types, their working principles, and applications in rectification, signal processing, and voltage regulation, essential for modern electronics and industrial systems. ...

Description: IGBTs (Insulated Gate Bipolar Transistors) are robust power semiconductor devices, but they can fail under certain electrical, thermal, or mechanical stresses. Understanding common failure modes-and ...

Description: As electrification accelerates, engineers face a recurring challenge: how to safely and efficiently manage high current loads? Whether it's powering an e-bike, driving a forklift or running an ...

Description: Automotive electronics are evolving faster than ever. Traditional internal combustion engine (ICE) architectures are giving way to mild hybrids, plug-in hybrids and fully electric vehicle (EV) ...

Description: This paper compares the material characteristics of glass and epoxy passivation methods for high voltage silicon diodes, with a focus on reliability-critical applications in harsh or demanding ...

Description: Gallium Nitride (GaN) semiconductors are transforming power electronics, driving innovation across industries from automotive and renewable energy to telecommunications and consumer electronics. In ...

Description: Battery protection is critical to ensure both the safety of consumer devices and the longevity of the battery. This is because lithium-ion or lithium-polymer batteries can be extremely sensitive to ...

Description: IGBTs (Insulated Gate Bipolar Transistors) are widely used in power electronic systems due to their efficiency and performance characteristics. However, they come with inherent trade-offs that must be ...

Description: When it comes to energy efficiency in our homes and offices, a critical component is the main control unit for our heating and cooling systems: the thermostat. Of course, over the years this humble ...

Description: As we move to a digitalized, decentralized, and decarbonized energy infrastructure, Battery Energy Storage Systems (BESS) are clearly emerging as a sustainability and energy efficiency game-changer. ...

Description: How can you confirm 1) The working ability of a high voltage diode 2) Double-check the polarity of the device. ...

Description: The SKKD 100/14 is a special kind of rectifier diode that's great at changing alternating current to direct current. It's made to be tough and work well, with a design that can be easily connected ...

Description: A diode is a semiconductor device that allows current to flow in one direction only. It acts as a one-way street for electrical current, permitting the flow from the anode (positive) to the cathode ...

Description: In modern power electronics, three-phase DC-DC resonant converters have emerged as a solution for high-power applications, offering reduced component stresses compared to their single-phase ...

Description: Topics covered in this article: Semiconductor Characterization and Cooling System Evaluation, Experimental Verifications and Results ...

Description: In the world of electronics, transistors are the unsung heroes, performing countless functions and underpinning the modern technology landscape. Invented in the mid-20th century, these tiny ...

Description: Fuji Electric is proud to support University Laval’s Formula Society of Automotive Engineers (SAE) team in Quebec, Canada. This team of students integrate Fuji Electric semiconductor devices to ...

Description: For several decades, MOS-gated power devices have been the prevalent choice for voltage-source inverters (VSIs) and current-source inverters (CSIs) in machine drives. However, recent advancements in ...

Description: Discover the benefits of vehicle-to-grid technology for optimizing energy exchange in the smart grid. Learn about load balancing, peak load reduction, and spinning reserves. ...

Description: Active filters are electronic circuits used to filter out specific frequency components from a signal. They are commonly used in audio equipment, telecommunications, and signal-processing ...

Description: Nowadays, homes, offices, and establishments are switching to grid-tied photovoltaic (PV) systems owing to the benefits they provide to the environment and long-term savings. Moreover, the government ...

Description: In spite of the advancements in the field of semiconductor technology, traditional power electronic systems comprising of Silicon are still being used today. Silicon-insulated bipolar transistors have ...

Description: When compared to their integrated circuit counterparts, who are spoiled by the most comprehensive simulation models, board level designers working with discrete power MOSFETs must feel terribly ...

Description: The rise of cordless, battery powered tools and outdoor power equipment has been dramatic over the last few years. One of the key drivers in this move has been the availability of long-lasting, ...

Description: It is not unusual for a design already in production to end up back with the engineering development team. In this case, the product is a 3-kW power conversion unit with a standard boost PFC that ...

Description: As discussed in Qrr: overlooked and underappreciated in efficiency battle, Qrr can have a significant impact on efficiency and spiking. Yet typically you find Qrr (and Trr) listed at the bottom of the ...

Description: Ever since the first of the new generation of small battery-cell powered motors hit the market, we have seen a wave of new products and ideas. One company that is literally riding that wave is JayKay ...

Description: As billions of people around the world adopt more flexible lifestyles, stable connections to the cloud via Wi-Fi, 4G and 5G are vital. To manage this, the growth in hyperscale computing solutions and ...

Description: An analysis is presented of the error introduced into estimates of avalanche photodiode (APD) lidar performance by assuming Gaussian distribution of the APD multiplication gain. The amplitude of ...

Description: MDE has many series of TVS semiconductors that can provide the protection needed to keep the systems running when everything else fails. ...

Description: Means of Protecting Irrigation Controls and Solenoids Irrigation Systems are vulnerable to lightning strikes, since they are typically located in very exposed locations. Most irrigation systems, such ...

Description: Paralleling TVS Diodes for Higher Power Capability Silicon Avalanche Transient Voltage Suppressors (TVS's) offer a great deal of flexibility in circuit protection. Fortunately, these devices are ...

Description: Leakage current will double for every 10 to 15°C rise in temperature, depending upon the voltage (usually referenced to the ambient temperature). ...

Description: The efficiency of power conversion and motor control applications is an ever-green design specification for an increasing variety of automotive applications. Modern internal combustion-engine vehicles ...

Description: GaN technology and specifically GaN-on-Silicon HEMT technology has become a key focus for power engineers over the last few years. Its promise to provide the high-power performance and high-frequency ...

Description: For the last decade or so, when it came to power MOSFET advances the primary goals were to push up efficiency and drive down drain-source on resistance. For most applications, choosing a given Figure ...

Description: Voltage and current transients are a major cause of solid-state component failure in electronic systems. These transients are a result of a sudden release of stored energy. Transients may be generated ...

Description: But the voltage control is not that precise and the TVS devices are not continuous operating components, their V-I characteristics are usually specified, and their duty cycle must be controlled. The ...

Description: AESA systems use active arrays, each with hundreds or even thousands of antennas. In many cases, the system is evaluated on the basis of size, weight, power, and cost (SWaP-C). The technology enabling ...

Description: The reliability of high-power GaN HEMTs, employed in high power amplifiers, is driven by peak temperatures within the base semiconductor technology. As such, the design engineer must carefully ...

Description: When designing a circuit, thermal calculations are indispensable, and particularly where power devices that handle large amounts of power are concerned, they are extremely important, not only with ...

Description: Industrial PSUs including datacenters come in all shapes and sizes but one thing they have in common is the need to be efficient, safe and stable. Since its introduction, 80 PLUS certification has ...

Description: I was chatting with my colleague Steve Hanly about his recent post on the Fourier transform and power spectral density, and we thought it might help to go a bit more into the math and guts of the ...

Description: Learning About Ohm's Law, GPIO and Transistors with Flashing LEDs on Raspberry Pi ...

Description: By eliminating internal bond wires and reducing source lead length, Nexperia's LFPAK88 minimizes parasitic source inductance created during switching, resulting in greater efficiency. While ...

Description: Choosing a low RDS(on) MOSFET for an efficient low loss power switching application? Don't forget to check there are no hidden compromises. ...

Description: We are all accustomed to looking at the Figure of Merit for MOSFETs as a product of RDS(on) and Qg. However, with gate drivers now capable of efficiently meeting large Qg requirements and faster ...

Description: When it comes to any system, to achieve the most efficient design we try to utilize the most ideal solution possible. Compared to their planar counterparts, Trench Schottky rectifiers take us much ...

Description: Reducing the chances of a thermal failure. Nexperia offers a wide and growing range of diodes, bipolar transistors and MOSFETs that have a junction temperature specified up to 175 °C Some things never ...

Description: In the third installment of this five-part series, Jon Titus explores the basic elements of a control system. In the first two installments, Jon covered relays and sink vs. source control. ...

Description: The latest GaN and GaAs circuit chips (die) are providing higher power levels than previous solid-state technologies. These new-generation devices require incredible precision and consistency ...

Description: Wolfspeed, A Cree Company, announced a performance breakthrough in the ability to power the drivetrain of electric vehicles (EVs) using its new third generation 1,200 V SiC MOSFET family. This ...

Description: The device was engineered for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component life ...

Description: This article demonstrates a design concept using commercially available SiC MOSFETs (C3M0065100K), which meets new market requirements for bidirectional functionality. A prototype 20-kW system in a ...

Description: The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM's integrated circuit are described in this application note. ...

Description: How improved manufacturing methods for thyristors are allowing a higher maximum operating temperature of up to 125 °C. This has no negative effects on critical thyristor parameters like surge ...

Description: The invention of the transistor that gave an unprecedented shock to the electronics industry at that time was made in the year 1948. That truly was the beginning of the current age of electronics. ...

Description: This is the classification based on the differences in the operating features. The classification is made as bipolar transistors and unipolar transistors. ...

Description: In an NPN transistor, the Base is at positive bias, the Collector at negative bias, and reverse current flows from the Emitter to the Collector. Also, please consider problems arising from usage. ...

Description: Selective spectral sensitivities by photodiode structure. ...

Description: Power MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. ...

Description: The faster switching of power MOSFETs enables higher power conversion efficiency. However, parasitic components in the devices and boards are involving switching characteristics more as the switching ...

Description: Figures and graphs from Denver's X-Ray Conference 2009. ...

Description: The MX-40 has a very small gate capacitance (0.26 pF). This is accomplished by making the diameter ("width") of the gate very small. With a drain pad diameter of only 70 µm and a gate diameter of ...

Description: Thanks to SiC's breakdown field strength that is ten times higher than that of silicon, SiC devices can be constructed to withstand the same breakdown with a much smaller drift region. In theory, SiC ...

Description: In JFETs designed primarily for silicon drift detectors and Si(Li) detectors, the reset transistor is configured as shown in Figure 1, with the base shorted to the source, the collector shorted to the ...

Description: A junction gate field-effect transistor (JFET) is the simplest type of field effect transistor. This device can be used as an electronically-controlled switch or as a voltage-controlled resistor. In a ...

Description: High-voltage rectification presents unique challenges to the designer. Careful examination of the application requirements is essential when selecting the best solution for size, cost and reliability. ...

Description: Controlling junction temperature is key to reliable semiconductor package design. High voltage diodes present unique junction temperature problems which must be addressed. ...

Description: Diode FAQ ...

Description: are Schottky barrier diodes. Not only do SBDs have the lowest reverse recovery time (trr) compared to the various types of fast recovery (fast recovery epitaxial), ultrafast recovery and super-fast ...

Description: Most countertop cooking appliances like electric ranges, skillets and fryers have an adjustable mechanical thermostat to vary the heat output of the range. This solution is inexpensive, but there are ...

Description: There is a wealth of information written on the subject of designing and analyzing oscillator circuits. Sources range from academic and research papers to industry generated application guides. It is ...