3.3 V FLASH Memory Chips
Description
3.3 V FLASH Memory Chips are non-volatile memory devices that retain stored data even when the power is turned off. These chips are designed to operate at a supply voltage of 3.3 volts, making them suitable for a variety of electronic applications. They are capable of storing data in a compact form and can be read and written to multiple times, providing a reliable storage solution for embedded systems and other digital devices.
Working Principle
FLASH memory operates by storing data in an array of memory cells made from floating-gate transistors. Each cell can be electrically programmed and erased, allowing data to be written and re-written. The process of writing data involves changing the state of a bit from 1 to 0, and erasing involves resetting the bits back to 1. This is achieved through a series of electrical signals that manipulate the charge on the floating gate of the transistor. The non-volatility of FLASH memory makes it particularly useful for applications where data persistence is critical, even in the absence of power.
Applications
3.3 V FLASH Memory Chips are widely used in various applications, including:
- Embedded Systems: They serve as the primary storage for firmware and software in embedded systems, providing a reliable and compact solution for data storage.
- IoT Devices: These chips are used in Internet of Things (IoT) devices for secure code storage and over-the-air updates, enhancing the functionality and security of smart devices.
- Smart Cards: FLASH memory is utilized in smart cards for storing secure data and executing complex functions required in financial transactions and identity verification.
Advantages over other FLASH Memory Chips
3.3 V FLASH Memory Chips offer several advantages, such as:
- Lower Power Consumption: Operating at 3.3 volts, these chips consume less power compared to higher voltage alternatives, making them ideal for battery-powered devices.
- High Endurance: They can endure over 100,000 program/erase cycles, providing long-lasting performance in applications that require frequent data updates.
- Versatility: With support for both NAND and NOR gate technologies, these chips offer flexibility in terms of access speed and data handling capabilities.
Limitations
Despite their advantages, 3.3 V FLASH Memory Chips have some limitations:
- Complex Erase Operations: The need to erase entire sectors to reset bits can complicate data management and increase the time required for write operations.
- Limited Write Cycles: Although they have high endurance, there is still a finite number of write cycles, which can be a concern in applications with extremely high write demands.
Considerations
When selecting 3.3 V FLASH Memory Chips, several factors should be considered:
- Initial Costs: The cost of FLASH memory can vary based on density and features, so it's important to balance budget constraints with performance needs.
- Operating Expense: Lower power consumption can reduce operating expenses, especially in battery-operated devices.
- Durability and Maintenance: With high endurance and reliability, these chips require minimal maintenance, but it's crucial to monitor the number of write cycles to prevent data loss.
- Replacement Costs: While durable, eventual replacement may be necessary due to the finite write cycle limit, so planning for future upgrades is advisable.
from Texas Instruments
32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus 14-CFP -55 to 210 [See More]
- Supply Voltage: 1.8V; 3.3V
- Operating Temperature: -55 to 210
- Density: 32000
- Package Type: CFP,XCEPT
from DigiKey
FLASH - NAND (MLC) Memory IC 32Gb (4G x 8) eMMC 200MHz 100-BGA (14x18) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 100-LBGA
from DigiKey
FLASH - NAND (MLC) Memory IC 4Gb (512M x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 153-VFBGA
from DigiKey
FLASH - NAND Memory IC 256Gb (32G x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 153-VFBGA
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers memory keys with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The keys feature: Ultra-rugged Construction – Serial Memory keys are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 8000
- Operating Temperature: -40 to 85
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 4GByte (NAND), 4Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from Acme Chip Technology Co., Limited
EMMC 5.1 (HS400) 153B 4GB - INDU [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Operating Temperature: -40 to 85
- Density: 32000000
- Package Type: BGA; 153-BGA
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 45CBGA [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from SK Hynix
System performance depends highly on eMMC performance, such as random read and write IOPS. SK hynix eMMC provides the best IOPs performance by using advanced FTL algorithm. Furthermore, features of eMMC5.0 allows for an even greater improvement in performance. [See More]
- Supply Voltage: 1.8V; 2.7V; 3V; 3.3V; 3.6V
- Technology: NAND
- Density: 512000 to 1024000000
- Operating Temperature: -45 to 85
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The tokens feature: Ultra-rugged Construction – SlimLine ™ tokens are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 64000
- Operating Temperature: -40 to 85
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 48TSOP [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF1682 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The tokens feature: Ultra-rugged Construction – SlimLine ™ tokens are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 64000
- Operating Temperature: -40 to 85
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 136-FBGA (10x10) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 32MBIT PARALLEL 46UBGA [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 90
- Density: 32000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF1601C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 16GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
EMMC 5.1 (HS400) 153B 16GB [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Operating Temperature: -25 to 85
- Density: 128000000
- Package Type: BGA
from Microchip Technology, Inc.
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 128MBIT PARALLEL 56TSOP [See More]
- Supply Voltage: 2.7V ~ 3.3V; 3.3V
- Access Time: 75
- Density: 128000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency which lowers power consumption. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 16000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 64GBIT MMC 100TBGA [See More]
- Supply Voltage: 2.7V ~ 3.3V; 3.3V
- Operating Temperature: -40 to 85
- Density: 64000000
- Package Type: BGA
from Microchip Technology, Inc.
The SST39VF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF010... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 1000
- Data Retention: 100
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Endurance: 100000
- Density: 1000
- Operating Temperature: -40 to 85
from Quarktwin Technology Ltd.
FLASH Memory IC 16Mbit Parallel 70 ns 45-CBGA (6.5x7.5) [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39LF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 1000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH Memory IC 16Mbit Parallel 70 ns 48-TSOP [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF020B devices are enhanced with improved operating frequency and even lower power consumption. [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (9x7.5) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39VF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF020... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39VF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 64Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39LF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF020... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 1Tbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 1000000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39LF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 2000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND Memory IC 16Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 16000000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF020A SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Operating Temperature: -40 to 85
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 128Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST49LF008A flash memory devices are designed to be read-compatible with the Intel 82802 Firmware Hub (FWH) device for PC-BIOS application. These devices provide protection for the storage and update of code and data in addition to adding system design flexibility through five general purpose... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 8000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND Memory IC 16Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 16000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC mode for in-system operations and Parallel Programming (PP) mode to... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Endurance: 100000
- Density: 8000
- Operating Temperature: 0 to 70
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 128Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST ’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 32000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 2Tbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 2000000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
The SST39VF3202C devices is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST ’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 32000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V. SST25PF040C SPI serial... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 20
- Density: 4000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-VFBGA (8x8.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V. Superior Reliability – Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention. Low Power Consumption (typical values at 14 MHz). Active Current: 9 mA (typical) –... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Endurance: 100000
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF401C/402C – 3.0-3.6V for SST39LF401C/402C. Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention. Low Power Consumption... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Data Retention: 100
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF401C/402C – 3.0-3.6V for SST39LF401C/402C. Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention. Low Power Consumption... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Data Retention: 100