3.3 V FLASH Memory Chips
from Texas Instruments
32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus 14-CFP -55 to 210 [See More]
- Supply Voltage: 1.8V; 3.3V
- Operating Temperature: -55 to 210
- Density: 32000
- Package Type: CFP,XCEPT
from Acme Chip Technology Co., Limited
EMMC 5.1 (HS400) 153B 4GB - INDU [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Operating Temperature: -40 to 85
- Density: 32000000
- Package Type: BGA; 153-BGA
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 45CBGA [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from DigiKey
FLASH - NAND (MLC) Memory IC 32Gb (4G x 8) eMMC 200MHz 100-BGA (14x18) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 100-LBGA
from RS Components, Ltd.
The SST25PF040C family of devices from Microchip are SuperFlash ® Memory ICs featuring a four-wire SPI-compatible interface. These Flash Memory Chips operate with a single power supply of 2.3V to 3.6V. Through the use of SuperFlash ® technology these devices offer exceptional erase times... [See More]
- Supply Voltage: 3.6 V, 2.3 V; 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Split Gate
- Density: 4000
- Package Type: WDFN
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 4GByte (NAND), 4Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 48TSOP [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from DigiKey
FLASH - NAND (MLC) Memory IC 64Gb (8G x 8) eMMC 200MHz 100-BGA (14x18) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 100-LBGA
from RS Components, Ltd.
Serial Flash memory integrated circuits. Memory Size = 4Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 4M x 8 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.3 V. Maximum Operating Supply Voltage = 3.6 V. Length = 5mm. Height = 1.5mm [See More]
- Supply Voltage: 3.6 V, 2.3 V; 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: SOIC
- Density: 4000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 32MBIT PARALLEL 46UBGA [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 90
- Density: 32000
- Operating Temperature: -40 to 85
from DigiKey
FLASH - NAND (MLC) Memory IC 4Gb (512M x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 153-VFBGA
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 32Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 32M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: SOIC
- Density: 32000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 136-FBGA (10x10) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
EMMC 5.1 (HS400) 153B 16GB [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Operating Temperature: -25 to 85
- Density: 128000000
- Package Type: BGA
from DigiKey
FLASH - NAND (MLC) Memory IC 8Gb (1G x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 153-VFBGA
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 32Mbit. Interface Type = SPI. Package Type = USON. Pin Count = 8. Organisation = 32M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: USON
- Density: 32000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 16GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 128MBIT PARALLEL 56TSOP [See More]
- Supply Voltage: 2.7V ~ 3.3V; 3.3V
- Access Time: 75
- Density: 128000
- Operating Temperature: -40 to 85
from DigiKey
FLASH - NAND Memory IC 256Gb (32G x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -40 to 85
- Technology: NAND
- Package Type: 153-VFBGA
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 64Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 64M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: WSON
- Density: 64000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 64GBIT MMC 100TBGA [See More]
- Supply Voltage: 2.7V ~ 3.3V; 3.3V
- Operating Temperature: -40 to 85
- Density: 64000000
- Package Type: BGA
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 64Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 64M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: WSON
- Density: 64000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 16Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 16M x 1 bit, 4M x 4 bit, 8M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 16000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 16Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 16M x 1 bit, 4M x 4 bit, 8M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 16000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH Memory IC 16Mbit Parallel 70 ns 45-CBGA (6.5x7.5) [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 16Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 16M x 1 bit, 4M x 4 bit, 8M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 16000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH Memory IC 16Mbit Parallel 70 ns 48-TSOP [See More]
- Supply Voltage: 2.65V ~ 3.3V; 3.3V
- Access Time: 70
- Density: 16000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (9x7.5) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: SOIC
- Density: 128000
- Pins: 16
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 128M x 1 bit. Mounting Type = Surface Mount. Minimum Operating Supply Voltage = 2.7 V. Maximum Operating Supply Voltage = 3.6 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Package Type: WSON
- Density: 128000
- Pins: 8
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 32000000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = BGA. Pin Count = 24. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: BGA
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 64Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 64000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 1Tbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 1000000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND Memory IC 16Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 16000000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: WSON
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 128Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: WSON
from Quarktwin Technology Ltd.
FLASH - NAND Memory IC 16Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 16000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 128Mbit. Interface Type = SPI. Package Type = WSON. Pin Count = 8. Organisation = 128M x 1 bit, 32M x 4 bit, 64M x 2 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 128000
- Package Type: WSON
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 128Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 128000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 32Mbit. Interface Type = SPI. Package Type = SOIC W. Pin Count = 8. Organisation = 16M x 2 bit, 32M x 1 bit, 8M x 4 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 32000
- Package Type: SOIC W
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 2Tbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 2000000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 32Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 16M x 2 bit, 32M x 1 bit, 8M x 4 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 32000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 64Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 8. Organisation = 16M x 4 bit, 32M x 2 bit, 64M x 1 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 64000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -40 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 256Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 2 bit, 256M x 1 bit, 64M x 4 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 256000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-VFBGA (8x8.5) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 256Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 2 bit, 256M x 1 bit, 64M x 4 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 256000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 1.8V ~ 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from RS Components, Ltd.
High performance. Low pin-count Quad SPI (Serial Peripheral Interface). Memory Size = 256Mbit. Interface Type = SPI. Package Type = SOIC. Pin Count = 16. Organisation = 128M x 2 bit, 256M x 1 bit, 64M x 4 bit. Mounting Type = Surface Mount. Cell Type = NOR. Minimum Operating Supply Voltage = 2.7 V. [See More]
- Supply Voltage: 3.6 V, 2.7 V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 256000
- Package Type: SOIC
from Quarktwin Technology Ltd.
FLASH - NAND (TLC) Memory IC 256Gbit eMMC 153-WFBGA (11.5x13) [See More]
- Supply Voltage: 1.8V, 3.3V; 3.3V
- Technology: NAND
- Density: 256000000
- Operating Temperature: -25 to 85
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers memory keys with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The keys feature: Ultra-rugged Construction – Serial Memory keys are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 8000
- Operating Temperature: -40 to 85
from SK Hynix
System performance depends highly on eMMC performance, such as random read and write IOPS. SK hynix eMMC provides the best IOPs performance by using advanced FTL algorithm. Furthermore, features of eMMC5.0 allows for an even greater improvement in performance. [See More]
- Supply Voltage: 1.8V; 2.7V; 3V; 3.3V; 3.6V
- Technology: NAND
- Density: 512000 to 1024000000
- Operating Temperature: -45 to 85
from Microchip Technology, Inc.
The SST39VF1681 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The tokens feature: Ultra-rugged Construction – SlimLine ™ tokens are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 64000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF1682 is a 2M x8 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Datakey
Leveraging industry-standard serial EEPROM and NOR flash memory, Datakey offers tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 64 Mb. The tokens feature: Ultra-rugged Construction – SlimLine ™ tokens are solid over-molded using a durable composite, making them... [See More]
- Supply Voltage: 2.7 to 3.6V; 2.7V; 3V; 3.3V; 3.6V
- Technology: Sectored
- Density: 2000 to 64000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39VF1601C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF1602C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 16000
- Endurance: 100000
from Microchip Technology, Inc.
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency which lowers power consumption. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 16000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF010... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 1000
- Data Retention: 100
from Microchip Technology, Inc.
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Endurance: 100000
- Density: 1000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST39LF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 1000
- Endurance: 100000
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF020B devices are enhanced with improved operating frequency and even lower power consumption. [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF020... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The SST serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF020 SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39LF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF020... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39LF200A is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Access Time: 55
- Density: 2000
- Endurance: 100000
from Microchip Technology, Inc.
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF020A SPI serial flash memories are manufactured with SST proprietary, high performance CMOS SuperFlash... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 2000
- Operating Temperature: -40 to 85
from Microchip Technology, Inc.
The SST49LF008A flash memory devices are designed to be read-compatible with the Intel 82802 Firmware Hub (FWH) device for PC-BIOS application. These devices provide protection for the storage and update of code and data in addition to adding system design flexibility through five general purpose... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Data Retention: 100
- Density: 8000
- Endurance: 100000
from Microchip Technology, Inc.
The SST49LF080A flash memory device is designed to interface with the LPC bus for PC and Internet Appliance application in compliance with Intel Low Pin Count (LPC) Interface Specification 1.0. Two interface modes are supported: LPC mode for in-system operations and Parallel Programming (PP) mode to... [See More]
- Supply Voltage: 3V; 3.3V; 3.6V
- Endurance: 100000
- Density: 8000
- Operating Temperature: 0 to 70
from Microchip Technology, Inc.
The SST39VF3201C is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST ’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 32000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF3202C devices is 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST ’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 32000
- Endurance: 100000
from Microchip Technology, Inc.
The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V. SST25PF040C SPI serial... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Data Retention: 20
- Density: 4000
- Endurance: 100000
from Microchip Technology, Inc.
The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Endurance: 100000
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V. Superior Reliability – Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention. Low Power Consumption (typical values at 14 MHz). Active Current: 9 mA (typical) –... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Endurance: 100000
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF401C/402C – 3.0-3.6V for SST39LF401C/402C. Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention. Low Power Consumption... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Data Retention: 100
from Microchip Technology, Inc.
Additional Features. Organized as 256K x16. Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF401C/402C – 3.0-3.6V for SST39LF401C/402C. Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention. Low Power Consumption... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Access Time: 70
- Density: 4000
- Data Retention: 100