540Ω Strain Gauges
from OMEGA Engineering, Inc.
OMEGA ® transducer quality strain gages are available in a variety of patterns to cover most transducer design requirements. Their rugged construction, reliability and flexibility make them suitable for highly accurate static and dynamic transducers. The measuring grid is formed by specially... [See More]
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Nominal Resistance: 540
- Arrangement: Tee
- Construction: Electrical Resistance
- Rosette Construction: Planar
from Piezo-Metrics
BACKED SEMICONDUCTOR STRAIN GAGES HALF-BRIDGE (SSGH) & FULL-BRIDGE (SSGF). Micron Instruments offers a wide range of semiconductor backed half and full bridge strain gages. Backed bridges are installed on a flexible high temperature insulator that can be bent around a one half inch radius... [See More]
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Nominal Resistance: 120; 540; 345, 1050, 2000, 5000, 10000
- Operating Temperature: 278
- Construction: Semiconductor
- Gage Factor: 175
from Piezo-Metrics
Standard BAR Gage Semiconductor Strain Gages. Micron semiconductor Strain Gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape thus eliminating molecular dislocation or cracks, thereby optimizing performance. [See More]
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Nominal Resistance: 120; 540; 750, 1050, 230, 15, 25, 30, 40 Ohms
- Operating Temperature: 500
- Construction: Semiconductor
- Termination Options: Leads
from Piezo-Metrics
Micron Instruments offers a line of Semiconductor - Backed Gages. Easy to install. Mounted on a flexible insulated circuit with versatile solder pads makes this device easy to install. The gage and gold wires are over-coated to seal out moisture and to provide additional protection of the gage... [See More]
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Nominal Resistance: 120; 540; 15, 25, 30, 40, 230, 345 1050, 1125, 2000, 5000, 10000
- Operating Temperature: 278
- Construction: Semiconductor
- Gage Factor: 175
from Piezo-Metrics
Standard "U" Shape Semiconductor Strain Gages. Micron semiconductor Strain Gages are made from "P" doped bulk silicon. This is a two terminal resistive device. The silicon is micro machined to shape thus eliminating molecular dislocation or cracks, thereby optimizing performance. [See More]
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Nominal Resistance: 540; 1000; 3000, 325, 10000 Ohms
- Operating Temperature: 500
- Construction: Semiconductor
- Gage Factor: 175