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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 140V, 12A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, 140V, 12A, 100W, Bipolar Transistor,
- IC(max): 12,000 milliamps
- VCEO: 140 volts
- VCBO: 200 volts
- fT: 20 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 140mA, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 140mA, 100W, Bipolar Transistor, Single
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 400V, 12A, 100W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 400V, 12A, 100W,
- IC(max): 12,000 milliamps
- VCEO: 400 volts
- VCBO: 700 volts
- fT: 4 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 140V, 10A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 140V, 10A, 100W, Bipolar
- IC(max): 10,000 milliamps
- VCEO: 140 volts
- VCBO: 140 volts
- fT: 20 MHz
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, 100V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:33W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -100V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:95MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:30hFE; RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 100V, 3A/TO251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 210275-PSMN009-100W Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL)
- V(BR)DSS: 100 volts
- PD: 300,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 100V, 2A, 15W, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN
- Features: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 45V 200mW 100@100mA,1V 500mA NPN SOT-323(SC-70) Bipolar (BJT) ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 6306-2SD2153T100W Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 110MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 840307-TK100L60W Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
- Features: MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 899669-TK100L60W,VQ Series: DTMOSIV Operating Temperature Range: 150°C (TJ) Features: N-Channel 600 V 100A (Ta) 797W (Tc) Through Hole TO-3P(L) Package: TO-3PL Package: Tube Mounting: Through Hole Family Name: TK100L60
- TJ: 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3, TO-3
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 30
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 200 MHz
- hfe: 30
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance. Features GaN-on-Silicon E-mode HEMT technology Dual Channels, Common Source Ultra High Switching Frequency Fast and Controllable Fall and Rise
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: Transistor, Bipolar; NPN Bipolar; Silicon; CASE 340D-02; 100; 100; 5; 160W, PBF
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 150 milliwatts
- TJ: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; NPN; TO-220AB; 100; 100; 5.0; 5 ADC COLLECTOR; 120 IB; 2W
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 650V/100A
- Output Power: 320 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 100@10mA,1V 200mA SOT-323-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 200 milliwatts
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; NPN; 100; 100; 7.0; 4 ADC COLLECTOR; 10 ADC IB; 15W; 15 HFE MIN.
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Supplier: Allied Electronics, Inc.
Description: PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 7VDC; 4 ADC COLLECTOR; 10 ADC IB; 15W
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 700V 10A 23MHz 100W Through Hole TO-220
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Description: IGBT MODULE 1200V 155A 500W E3
- Output Power: 500 watts
- Features: IGBT, Other
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN complement: BC848W Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Applications General-purpose switching and amplification
- hfe: 475
- VCEO: -65 volts
- IC(max): -100 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistor in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: BC858W Features and benefits General-purpose transistor SMD plastic package AEC-Q101 qualified Applications General-purpose switching and amplification
- hfe: 800
- VCEO: 30 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: 150 C
- Features: General Purpose BJT
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistor Summary of Features High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For general AF applications
- IC(max): 500,000 to 500 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 170 MHz
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optocoupler Single-Transistor
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 100 watts of peak pulse power under the
- Power Gain: 9.3 dB
- Operating Frequency: 3,100 to 3,500 MHz
- Output Power: 100 watts
- Features: Bipolar RF Transistors, Other
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