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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 140V, 12A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, 140V, 12A, 100W, Bipolar Transistor,
- IC(max): 12,000 milliamps
- VCEO: 140 volts
- VCBO: 200 volts
- fT: 20 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 140mA, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 140mA, 100W, Bipolar Transistor, Single
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 400V, 12A, 100W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 400V, 12A, 100W,
- IC(max): 12,000 milliamps
- VCEO: 400 volts
- VCBO: 700 volts
- fT: 4 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 140V, 10A, 100W. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 140V, 10A, 100W, Bipolar
- IC(max): 10,000 milliamps
- VCEO: 140 volts
- VCBO: 140 volts
- fT: 20 MHz
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, 100V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:33W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -100V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:95MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:30hFE; RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 100V, 3A/TO251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 50V, 100mA, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:100mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 210275-PSMN009-100W Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL)
- V(BR)DSS: 100 volts
- PD: 300,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 6306-2SD2153T100W Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 110MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 45V 200mW 100@100mA,1V 500mA NPN SOT-323(SC-70) Bipolar (BJT) ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 840307-TK100L60W Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
- Features: MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 899669-TK100L60W,VQ Series: DTMOSIV Operating Temperature Range: 150°C (TJ) Features: N-Channel 600 V 100A (Ta) 797W (Tc) Through Hole TO-3P(L) Package: TO-3PL Package: Tube Mounting: Through Hole Family Name: TK100L60
- TJ: 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3, TO-3
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 30
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 200 MHz
- hfe: 30
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance. Features GaN-on-Silicon E-mode HEMT technology Dual Channels, Common Source Ultra High Switching Frequency Fast and Controllable Fall and Rise
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: Transistor, Bipolar; NPN Bipolar; Silicon; CASE 340D-02; 100; 100; 5; 160W, PBF
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 150 milliwatts
- TJ: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; NPN; TO-220AB; 100; 100; 5.0; 5 ADC COLLECTOR; 120 IB; 2W
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 1200V/100A
- Output Power: 403 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; NPN; 100; 100; 7.0; 4 ADC COLLECTOR; 10 ADC IB; 15W; 15 HFE MIN.
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 100@10mA,1V 200mA SOT-323-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 200 milliwatts
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Supplier: Allied Electronics, Inc.
Description: PNP-SI, TRANSISTOR; PNP; 100VDC; 100VDC; 7VDC; 4 ADC COLLECTOR; 10 ADC IB; 15W
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 700V 10A 23MHz 100W Through Hole TO-220
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Description: IGBT MODULE 1200V 183A 630W E3
- Output Power: 630 watts
- Features: IGBT, Other
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN complement: BC848W Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Applications General-purpose switching and amplification
- TJ: 150 C
- Features: General Purpose BJT, Other
- Polarity: NPN
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistor in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: BC858W-Q Features and benefits General-purpose transistor SMD plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications
- Features: General Purpose BJT, Other
- Package Type: SOT323
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: 150 C
- Features: General Purpose BJT
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optocoupler Single-Transistor
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistor Summary of Features High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For general AF applications
- IC(max): 500,000 to 500 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 170 MHz
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Supplier: Qorvo
Description: QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications,
- Power Gain: 11.5 dB
- Operating Frequency: 3,100 to 3,500 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
signal deviation. In terms of power load capacity, every single RF channel supports a peak power of 100W and a continuous stable average power of 50W, which can adapt to high-load RF signal transmission working conditions (read more)
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. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters (read more)
Browse Transistors Datasheets for Nexperia B.V.