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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 60V 8A 80W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN MED PWR TRNSISTR 40V 0.6A 3 PIN .
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 120776-BUH100 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 23MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating
- Package Type: TO-220, SOT3, Other
- Polarity: NPN, Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: TO-92, Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 . While operating in class C mode at Vcc=36V, this common base device supplies a minimum of 100 watts of peak
- Operating Frequency: 870 to 990 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 10.3 dB
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 350mW Surface Mount SOT-23-3
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1267393-TIP100 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-220
- Operating Frequency: 4 MHz
- Output Power: 80 watts
- Package Type: TO-220, SOT3
- Packing Method: Bulk Pack, Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Micro Commercial Co Win Source Part Number: 796785-TIP100-BP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 80W Transistor Type: NPN - Darlington Family Name: TIP
- IC(max): 0.0500 milliamps
- Package Type: TO-220, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors NPN High Frequency
- Output Power: 0.7350 watts
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Power Gain: 6.5 dB
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification
- IC(max): -100 milliamps
- Operating Frequency: 100 MHz
- PD: 250 milliwatts
- Package Type: Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Win Source Electronics
Description: Manufacturer: WeEn Semiconductors Win Source Part Number: 770630-BUJ100,412 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 2W Transistor Type: NPN Family Name: BUJ100
- IC(max): 0.1000 milliamps
- Output Power: 2 watts
- Package Type: TO-92, SOT3
- Packing Method: Bulk Pack, Other
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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