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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, IGBT MODULE, 600V, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This
- PD: 300,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, 100A, MOSFET Transistor, Single
- V(BR)DSS: 100 volts
- gfs: 0.206 kS
- PD: 250 milliwatts
- TJ: -55 to 150 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, IGBT MODULE, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20A, 100A, MOSFET Transistor, Single
- V(BR)DSS: 100 volts
- gfs: 0.06 kS
- PD: 156 milliwatts
- TJ: -55 to 150 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 930809-PN100A Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 45 V 500 mA 250MHz 625 mW Through Hole TO-92-3 Package: Bulk Package: TO-226-3, TO-92-3 (TO-226AA) Mounting: Through Hole Part Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-92
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/Micross Components Win Source Part Number: 101087-MMBT100A Categories: Discrete Semiconductor Products Status: Active
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Newark, An Avnet Company
Description: IGBT, MODULE, N-CH, 650V, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1156256-BUK9660-100A Manufacturer Homepage: www.nxp.com Alternative Parts (Cross-Reference): IPB47N10S-33; RSJ550N10FRATL; BUK7631-100E; BUK9660-100A; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP TRAN 100V 25A
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Supplier: ODG (Origin Data Global)
Description: 100V 20A 100mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 201646-BUK9528-100A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 166W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status:
- V(BR)DSS: 100 volts
- PD: 166,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 100V, 3A/TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 350mW Surface Mount SOT-23-3
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 75Amps 600V
- Features: IGBT
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Features: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: BSS64A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors 2A 100V Bipolar Power NPN
- IC(max): 2,000 milliamps
- VCEO: 100 volts
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: -100 volts
- IC(max): -6 milliamps
- PD: 1.3 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 100 volts
- IC(max): 2 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 80MHz 100mW Surface Mount SSSMini3-F1
- Features: Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB)
- VCEO: 100 volts
- IC(max): 2 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP/7A/100V/TO-220
- VCEO: 100 volts
- IC(max): 6,000 milliamps
- PD: 65,000 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: 100 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 150 milliwatts
- TJ: -55 to 150 C
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: DTC123EUBHZG is a transistor with bias resistor, suitable for inverter. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT323
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 400V 625mW 100@10mA,10V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 400 volts
- fT: 50 MHz
- PD: 625 milliwatts
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size Features GaN-on-Silicon E-mode HEMT technology Very low gate charge Ultra-low on resistance Very small footprint Applications High
- Features: Other
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