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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, IGBT MODULE, 600V, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This
- PD: 300,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, IGBT MODULE, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, 100A, MOSFET Transistor, Single
- V(BR)DSS: 100 volts
- gfs: 0.16 kS
- PD: 3.6 milliwatts
- TJ: -55 to 150 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This
- PD: 520 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
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Metal-Oxide Semiconductor FET (MOSFET) - N-Channel 100A MOSFET Transistor -- 278-BUK9640-100A/C1,118Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100A, MOSFET Transistor, Single FETs, MOSFETs. This
- PD: 158,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 930809-PN100A Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 45 V 500 mA 250MHz 625 mW Through Hole TO-92-3 Package: Bulk Package: TO-226-3, TO-92-3 (TO-226AA) Mounting: Through Hole Part Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-92
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/Micross Components Win Source Part Number: 101087-MMBT100A Categories: Discrete Semiconductor Products Status: Active
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1156256-BUK9660-100A Manufacturer Homepage: www.nxp.com Alternative Parts (Cross-Reference): IPB47N10S-33; RSJ550N10FRATL; BUK7631-100E; BUK9660-100A; Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: IGBT, MODULE, N-CH, 650V, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: 100V 20A 100mΩ@10V 1 N-Channel TO-263 MOSFETs ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP TRAN 100V 25A
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 100V, 3A/TO252; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 201646-BUK9528-100A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 166W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status:
- V(BR)DSS: 100 volts
- PD: 166,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625mW Through Hole TO-92-3
- Polarity: NPN
- Features: Other
- Package Type: TO-92
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 1A, TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 10 Amps 1000V 4 Rds
- Features: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Features: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: BSS64A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors 2A 100V Bipolar Power NPN
- IC(max): 2,000 milliamps
- VCEO: 100 volts
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP/7A/100V/TO-220
- VCEO: 100 volts
- IC(max): 6,000 milliamps
- PD: 65,000 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- hfe: 150
- VCEO: 100 volts
- IC(max): 2,000 milliamps
- PD: 1,250 milliwatts
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB)
- hfe: 120 to 260
- VCEO: 100 volts
- IC(max): 2,000 milliamps
- PD: 1,250 milliwatts
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 150MHz 100mW Surface Mount ML3-N2
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 150 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: 45 V, 100 mA PNP general purpose transistor
- hfe: 420 to 800
- VCEO: 45 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 400V 625mW 100@10mA,10V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 400 volts
- fT: 50 MHz
- PD: 625 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: DTC123YEBHZG is a transistor with bias resistor, suitable for inverter. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 6 mm package size Features GaN-on-Silicon E-mode HEMT technology Very low gate charge Ultra-low on resistance Very small footprint Applications High
- Features: Other
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Description: IGBT MOD 1700V 100A 960W
- Output Power: 960 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
products since 1970. Fuji Electric Co., Ltd., celebrating their 100th anniversary this year, began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, contactors, relays, and power generation equipment to AC drives and uninterruptible power supply systems (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
How do you select a gate driver? How do HPnC High Power Modules Benefit Railway Systems? We've got the answers! More About Fuji Electric Did you know that Fuji Electric started manufacturing electrical machinery in 1924? Built its first hydraulic turbine in 1936? For (read more)
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Semiconductors play a critical role in the fabrication of electronic devices, making them an important part of our everyday lives. Over the past 50 years, advancements in semiconductor technology have helped make electronic devices smaller, faster, and more reliable. Fuji Electric is proud to be (read more)
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Semiconductor highlights! More About Fuji Electric Did you know that Fuji Electric started manufacturing electrical machinery in 1924? Built its first hydraulic turbine in 1936? For almost 100 years, Fuji Electric has been in the forefront of (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America