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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 60V 8A 80W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT TRANS GP BJT NPN 25V 2A 4PIN
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR158W
- Package Type: SOT323, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR135W
- Package Type: SOT323, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: OPTEK TECHNOLOGY Semiconductors OPB841W55Z
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-323-3 Bipolar Transistors - BJT ROHS
- Package Type: SOT323
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C mode this common base device supplies a minimum of 100 watts of peak pulse power under
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 840307-TK100L60W Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
- Package Type: SOT3
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 150mW +/-100mA
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: TO-92, Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 45V 0.5A SOT23-3
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: SOT323
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1267393-TIP100 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-220
- Operating Frequency: 4 MHz
- Output Power: 80 watts
- Package Type: TO-220, SOT3
- Packing Method: Bulk Pack, Other
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 700V 10A 23MHz 100W Through Hole TO-220
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
- Operating Frequency: 2 to 500 MHz
- Output Power: 40 watts
- Package Type: Other
- Power Gain: 14 dB
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 31V 400MHZ 55JU
- Operating Frequency: 225 to 400 MHz
- Output Power: 270 watts
- Package Type: Other
- Polarity: NPN, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET 2170MHZ 10W
- Output Power: 10 watts
- Packing Method: Tape Reel, Other
- Power Gain: 14.5 dB
- Transistor Type: MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 846935-MTI85W100GC-S MD Features: Mosfet Array Package: Tube Family Name: MTI85W100 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Micro Commercial Co Win Source Part Number: 796785-TIP100-BP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 80W Transistor Type: NPN - Darlington Family Name: TIP
- IC(max): 0.0500 milliamps
- Package Type: TO-220, SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: BSS63A is a SOT-23 package Transistor for high voltage amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. NPN complement: BC848W Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Applications General-purpose switching and amplification
- Package Type: SOT323, Other
- Polarity: NPN
- TJ: 150 C
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN 45V 0.5A SUPERSOT-6
- IC(max): 500 milliamps
- Operating Frequency: 300 MHz
- Output Power: 0.7000 watts
- Package Type: SOT23, Other
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Supplier: Microchip Technology, Inc.
Description: The SY10/100ELT22 are dual TTL-to-differential PECL translators. Because PECL (Positive ECL) levels are used, only +5V and ground are required. The small outline 8-lead SOIC package and the low skew, dual gate design of the ELT22 makes it ideal for applications which require the tranlation of
- Input Voltage: 5 volts
- Logic Family: Transistor-Transistor Logic (TTL)
- Operating Current: 30 mA
- Package: SOIC, Other
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual MOSFET device is capable of supplying a minimum of 100 watts of output
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 12.5 dB
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 650V/100A
- Packing Method: Bulk Pack, Other
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters (read more)
Browse Transistors Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited