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Supplier: Littelfuse, Inc.
Description: , state of the art chipsets against ESD transients. ESD, IEC 61000-4-2, ±10kV contact, ±15 kV air EFT, IEC 61000-4-4, 80 A (tP=5/50ns) Lightning, 2 A (8/20 as defined in IEC 61000-4-5 2nd edition) Low capacitance of 0.2pF (TYP) per I/O Low leakage current of 0.01µA (TYP) at 5V Tiny
- Diode Type: General Purpose (PN Junction Diodes), Zener Diodes, Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- VR: 5 volts
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Supplier: Utmel Electronic Limited
Description: DIODE GEN PURP 1KV 10A D2PAK
- Diode Applications: Other
- Diode Type: General Purpose (PN Junction Diodes), Other
- IF: 155000 mA
- IR: 0.1000 mA
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1KV 1.5A
- Diode Applications: Other
- Diode Type: Avalanche Diodes, Other
- IF: 1500 mA
- IR: 1.00E-3 mA
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 1.2KV 10A TO252-2
- Diode Type: Schottky Barrier Diodes, Other
- IF: 16000 mA
- IR: 0.3500 mA
- RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: DIODE GEN PURP 1.2KV 10A D2PAK
- Diode Applications: Power Diode, High Voltage, Other
- Diode Type: General Purpose (PN Junction Diodes), Other
- IR: 0.0500 mA
- Tj: -40 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 891902-RKP350KV#P1 Series: * Features: Diode Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Quantity per
- Diode Type: Other
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Supplier: Littelfuse, Inc.
Description: -4-2, +22/-10kV contact, +22/-10kV air EFT, IEC61000-4-4, 40 A (tp = 5/50 ns) Lightning protection, IEC61000-4-5 2nd edition, 3A (tp=8/20µs) Low capacitance of 0.2pF (TYP) at 3GHz Low leakage current of 20nA (TYP) at 5V Moisture Sensitivity Level (MSL-1) Lead-free,
- Diode Type: Zener Diodes, Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- VR: 5 volts
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Supplier: Littelfuse, Inc.
Description: , ±30kV air EFT, IEC 61000-4-4, 80 A (tP=5/50ns) Lightning, IEC 61000- 4-5 2nd edition, 10 A (tP=8/20µs) Low capacitance of 0.35pF (TYP) per I/O Low leakage current of 1nA (TYP) at 3.3V Small form factor µDFN (JEDEC MO-229) package provides flow through routing to simplify PCB layout
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- VR: 3.3 volts
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Supplier: ODG (Origin Data Global)
Description: 35A 1.1V@1A 1A 1kV ABS Bridge Rectifiers ROHS
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: -23 ESD Capability per HBM Standards: IEC 61000-4-2, Direct Discharge 8kV (Level 4); IEC 61000-4-2, Air Discharge 15kV (Level 4); MIL STD 3015.7 >8kV Input Protection for Applications with Power Supplies Up to +20V (Single-Ended Voltage), and ±10V (Differential Voltage)
- Diode Type: General Purpose (PN Junction Diodes), Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- VR: 20 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 10A 1kV 1V@10A R-6 Diodes - General Purpose ROHS
- Diode Type: General Purpose (PN Junction Diodes)
- RoHS Compliant: Yes
- VF: 1 volts
- VR: 1000 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 10A 1V@10A 1kV R-6 Diodes - General Purpose ROHS
- Diode Type: General Purpose (PN Junction Diodes)
- RoHS Compliant: Yes
- VF: 1 volts
- VR: 1000 volts
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE GEN PURP 10KV 600MA
- Diode Applications: Rectifier Diode
- VF: 17 volts
- VR: 10000 volts
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Diode Applications: Rectifier Diode
- VF: 26 volts
- VR: 10000 volts
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Supplier: ODG (Origin Data Global)
Description: 1kV MBS Bridge Rectifiers ROHS
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: DIODE GEN PURP 1KV 10A SMC
- Diode Type: General Purpose (PN Junction Diodes)
- VF: 1.1 volts
- VR: 1000 volts
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Supplier: ODG (Origin Data Global)
Description: 35A 1.3V@1A 1A 1kV MBF Bridge Rectifiers ROHS
- Diode Applications: Rectifier Diode
- RoHS Compliant: Yes
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Description: DIODE GEN PURP 10KV 500MA MODULE
- Diode Applications: Rectifier Diode
- VF: 28 volts
- VR: 10000 volts
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Description: DIODE GEN PURP 1KV 10A TO220AC
- Diode Applications: Rectifier Diode
- VF: 1.33 volts
- VR: 1000 volts
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Description: DIODE GP 1KV 10A TO220ACFP
- Diode Applications: Rectifier Diode
- VF: 1.33 volts
- VR: 1000 volts
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Description: DIODE GEN PURP 1KV 10A TO220AC
- Diode Applications: Rectifier Diode
- VF: 1.33 volts
- VR: 1000 volts
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE GEN PURP 1KV 10A TO263AB
- Diode Applications: Rectifier Diode
- VF: 1.1 volts
- VR: 1000 volts
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE GEN PURP 1KV 10A R-6
- Diode Applications: Rectifier Diode
- VF: 1.1 volts
- VR: 1000 volts
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Supplier: Radwell International
Description: RECTIFIER, 10A, 1.2KV, TO-220ACFP ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: VAST STOCK CO., LIMITED
Description: TVS Diodes / ESD Suppressors 400W -/+30kV -/+5% AEC-Q101 Qualified
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
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Supplier: DigiKey
Description: DIODE GEN PURP 1KV 10A DO214AB
- Tj: -55 to 150 C
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Diode Switching 1KV 3A 2-Pin Case R
- Diode Applications: Rectifier Diode, Switching
- IF: 3000 mA
- IR: 0.3000 mA
- Tj: -65 to 175 C
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Description: MORNSUN high voltage output dc dc converter can provide the output up to 2000VDC, and the power range is from 0.625 to 40W. And the series also features non-isolated, constant current output at 20mA, input under-voltage protection, output short-circuit protection, over-voltage protection. They are
- Number of Outputs: 1 #
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Supplier: Semtech Corp.
Description: temperatures ranging from -65°C to +175°C, making them ideal for the demands of military, industrial and aerospace environments. Our half wave discrete rectifiers are available in voltage ranges (blocking voltage, reverse voltage, VR) from 50 volts 10,000 volts (10 KV). Forward
- Diode Applications: Rectifier Diode
- IF: 100 to 6000 mA
- trr: 25 to 5000 ns
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Supplier: Nexperia B.V.
Description: High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface-Mounted Device (SMD) plastic package. Features and benefits Total power dissipation: = 4.1 W @ Tsp = 75 °C, measured zero lead length Tolerance
- Diode Applications: Voltage Regulation, Power Diode
- IF: 400 mA
- RoHS Compliant: Yes
- Tj: 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: Single 1kV 1.15V@1.5A 1.5A SMA(DO-214AC) Avalanche Diodes ROHS
- IR: 1.00E-3 mA
- Package Type: SMA
- RoHS Compliant: Yes
- VF: 1.15 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 012383-BYG10Y-E3/TR Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV) Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Configuration: Single
- IR: 1.00E-3 mA
- Life Cycle Stage: Other
- Package Type: SMA, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 35A 1.1V 1A 1kV ABS Bridge Rectifiers ROHS
- IFSM: 35 amps
- IO: 1 amps
- Rectifier Configuration / Technology: Bridge
- RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: Zener Diode 1.5W 10V 5% ESD 16KV SMA - Discrete Semiconductors - Zener Diodes
- Diode Type: Zener Diodes
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-leaded, mil-qualified (QPL), hermetically sealed, fully tested, high voltage diode. Tested in accordance with Mil-Prf-19500/577, the 1N6535 is available as a JANTX, or JANTXV device. Electrical specifications include 10kV, 25mA, 70ns. Mil (read more)
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The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
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The SMF150 high voltage diode features 15kV reverse voltage in the smallest package available. Measuring just 0.450" l x 0.120" w x 0.130" h (11.43mm l x 3.048mm w x 3.302mm h), it (read more)
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VMI offers axial-lead, glass-body diodes ranging from 2kV to 20kV. One example is our 1N6519 high voltage diode, a hermetically sealed device that can (read more)
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VMI's K-series epoxy diodes start at 2.5kV and go up to 10kV. Current handling capacity ranges from 1.5 Amps to 3.0 Amps. Select from Trr of 100nS, 200nS or 3000n (read more)
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VMI manufactures two 10kV, 5mA diodes – the M100FF3 and (read more)
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voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
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VMI's SMF150HT — in the Smallest Footprint Possible for a 15kV Diode! Suitable to operate at 175 degrees Celcius for rugged environments including downhole applications, it (read more)
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the option of high voltage diodes in a clear epoxy package without embedded LEDs — available in 10kV, 15kV and 20kV. These high voltage, hermetically sealed (read more)
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Ultra High Power 10 kV, 50 A SiC PiN Diodes
Pulsed forward I-V characteristic of a large 10 kV diode with a 3.75 V forward drop at 50 A and 5.9 V forward drop at 328 A indicating a high level of conductivity modulation.
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Carrier lifetime measurements in 10 kV 4H-SiC diodes
It is worth noting that the degree of base modulation in the 10 kV diodes under !.tudy (with W/L=5.8) is higher than that in 6 kV diodes with lower K/L=3 [3].
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High power, drift-free 4H-SiC PiN diodes
These 10 kV diodes demonstrate pulsed current handling capability up to 328 A which represents over 3 MW ofpulsed power.
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High voltage semiconductor technologies
Fig. 5: Waveforms of snubberless turn-off for a 91mm 10 kV Diode (left) and IGCT (right), IT=2 kA.
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Design and Analysis of a 270kW Five-level DC/DC Converter for Solid State Transformer Using 10kV SiC Power Devices
The anti-parallel 10kV diodes conduct only very small amount of time and there is no reverse recovery loss.
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High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters
Specifically, for 10 kV diodes , the lifetime should be no shorter than 1 μs.
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FAQs > Diodes
Question: Can I operate an axial-leaded 10KV diode without it arcing from lead-to-lead?
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Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
Wave forms of reverse recovery for a 10 kV diode demonstrator with area 40 cm2 at Tj = 130 °C, and VDC = 6000 V, IT=2.0 kA.
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Emerging silicon carbide power electronics components
reccnt results showing 10 kV diodes with stable forward .
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Physical models for bipolar device simulation and their effects on cutoff frequency
Simulation of Proton-Induced Local Lifetime Reduction in 10 kV Diodes .