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Supplier: Littelfuse, Inc.
Description: The SP3423 integrates 2 channels of low capacitance steering diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). The SP3423 can safely absorb repetitive ESD strikes above the maximum contact
- VR: 5 volts
- VBR: 7 volts
- CT: 0.96 pF
- Features: Array, Bidirectional
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Supplier: Newark, An Avnet Company
Description: 0.3pF 10KV Diode Array / TR RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 10A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1KV, 10A, Diode and Rectifier, Single
- Tj: -40 C
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 10A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1.2KV, 10A, Diode and Rectifier,
- Tj: -40 C
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Utmel Electronic Limited
Description: DIODE GEN PURP 1KV 10A D2PAK
- VF: 1.33 volts
- IF: 155,000 mA
- VR: 1,000 volts
- IR: 0.1 mA
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 4A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1KV, 4A, Diode and Rectifier, Bridge Rectifiers.
- Tj: -55 C
- Diode Applications: Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10KV, 0.3A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 10KV, 0.3A, Diode and Rectifier, Single Diodes. This listing
- Tj: -65 C
- IO: 0.13 amps
- Features: Other
- Diode Applications: Rectifier Diode
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Supplier: Utmel Electronic Limited
Description: DIODE GEN PURP 1.2KV 10A D2PAK
- VF: 1.1 volts
- VR: 1,200 volts
- IR: 0.05 mA
- Tj: -40 to 150 C
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Supplier: Utmel Electronic Limited
Description: DIODE GEN PURP 1KV 8A DPAK
- VF: 1.3 volts
- VR: 1,000 volts
- IR: 0.1 mA
- trr: 270 ns
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Supplier: Utmel Electronic Limited
Description: DIODE AVALANCHE 1KV 1.5A
- VF: 1.15 volts
- IF: 1,500 mA
- VR: 1,000 volts
- IR: 0.001 mA
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Supplier: Newark, An Avnet Company
Description: SIC SCHOTTKY DIODE, 1.2KV, 10A, TO-263; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:10A; Total Capacitive Charge Qc:62nC; Diode Case Style:TO-263; No. of RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: SIC SCHOTTKY DIODE, 1.2KV, 10A, TO-263; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:10A; Total Capacitive Charge Qc:57nC; Diode Case Style:TO-263; No. of RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: RECTIFIER - SILICON 10KV 25MA
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Supplier: Newark, An Avnet Company
Description: SIC SCHOTTKY DIODE, 1.7KV, 10A, TO-247; Product Range:MPS Gen IV Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:1.7kV; Average Forward Current:10A; Total Capacitive Charge:83nC; Diode Case Style:TO-247 RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: The SP3422-04UTG integrates 4 channels of ultralow capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes
- VR: 5 volts
- CT: 0.2 pF
- Features: Array, Bidirectional
- RoHS Compliant: RoHS Compliant
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 891902-RKP350KV#P1 Series: * Features: Diode Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Quantity per package:
- Features: Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 10A 1V@10A 1kV R-6 Diodes - General Purpose ROHS
- VF: 1 volts
- VR: 1,000 volts
- Diode Type: General Purpose (PN Junction Diodes)
- RoHS Compliant: RoHS Compliant
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Supplier: Littelfuse, Inc.
Description: SP3401-02UTG is specifically designed to protect high-speed interfaces against ElectroStatic Discharge (ESD), such as DisplayPort interfaces and USB 3.1 Gen 1. The signal line is protected by a TVS diode offering low line capacitance of 0.35 pF typical. SP3401 can safely absorb repetitive ESD
- VR: 3.3 volts
- CT: 0.8 pF
- Features: Array, Bidirectional
- RoHS Compliant: RoHS Compliant
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Supplier: ODG (Origin Data Global)
Description: Independent Type 10A 1.1V@10A 1kV R-6 Diodes - General Purpose ROHS
- RoHS Compliant: RoHS Compliant
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Description: DIODE GEN PURP 1KV 10A TO220AC
- VF: 1.33 volts
- VR: 1,000 volts
- Diode Applications: Rectifier Diode
- Features: Removed, TO-220
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Supplier: ODG (Origin Data Global)
Description: DIODE GEN PURP 1KV 10A R-6
- VF: 1 volts
- VR: 1,000 volts
- IR: 0.01 mA
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE GEN PURP 1KV 10A TO263AB
- VF: 1.1 volts
- VR: 1,000 volts
- Diode Applications: Rectifier Diode
- Features: Removed
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Supplier: Littelfuse, Inc.
Description: SP724AHTG is comprised of bipolar SCR/diode structures to protect up to four independent lines by clamping transients of either polarity to the power supply rails. The SP724AHTG offers very low leakage (1nA Typical) and low input capacitance (3pF Typical). Additionally, the SP724AHTG is rated
- VR: 20 volts
- CT: 3 pF
- Features: Array, Bidirectional
- Diode Type: General Purpose (PN Junction Diodes), Transient Voltage Suppressor Diodes (TVS)
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Supplier: DigiKey
Description: DIODE GEN PURP 1KV 10A DO214AB
- Tj: -55 to 150 C
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- VF: 26 volts
- VR: 10,000 volts
- IO: 0.9 amps
- IFSM: 25 amps
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Supplier: VAST STOCK CO., LIMITED
Description: TVS Diodes / ESD Suppressors 400W -/+30kV -/+5% AEC-Q101 Qualified
- Features: Other
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 129841-VS-10ETF10PBF Packaging: Tube/Rail Mounting: Through Hole Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Reverse Recovery Time (trr):
- VF: 1.33 volts
- VR: 1,000 volts
- trr: 310 ns
- Tj: -40 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 148184-10A07-T Packaging: Reel - TR Mounting: Through Hole Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 10A Current - Reverse
- VF: 1 volts
- VR: 1,000 volts
- IR: 0.01 mA
- Tj: -65 to 150 C
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Supplier: Allied Electronics, Inc.
Description: DIODE, Standard Recovery, 1 A (MAX.) @ 25C IF, 1.1 V (MAX.) @ 25C, 5 UADC (MAX.) @ 25C IR, DO-41 Pkg Features/Mechanical Data. Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number. Pb?Free Case: Epoxy, Molded Weight: 0.4
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 050933-DSEI12-10A Packaging: Tube/Rail Mounting: Through Hole Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 12A Reverse Recovery Time (trr): 60ns
- VF: 2.7 volts
- VR: 1,000 volts
- IR: 0.25 mA
- trr: 60 ns
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Supplier: RS Components, Ltd.
Description: Zener Diode 1.5W 10V 5% ESD 16KV SMA
- Pin Count: 2
- Features: Other
- RoHS Compliant: RoHS Compliant
- Diode Applications: Voltage Regulation
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Description: widely used in fields such as photomultiplier tubes, mass spectrum, light spectrum, electron beam, ion beam, avalanche diodes.
- DC Input Voltage: 21.6 to 26.4 volts
- DC Output Voltage: 1,000 volts
- DC Output Power: 10 watts
- Number of Outputs: 1 #
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Supplier: Nexperia B.V.
Description: High power voltage regulator diodes in a CFP3 (SOD123W) small and flat lead low-profile Surface-Mounted Device (SMD) plastic package. Features and benefits Total power dissipation: ≤ 5.5 W @ Tsp = 75 °C, measured zero lead length Tolerance series: Approximately ±5 % Working voltage range:
- Features: Other, SOD-123
- Diode Applications: Power Diode, Voltage Regulation
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Supplier: RS Components, Ltd.
Description: Femto Farad TVS Diode Bidir. 10kV TSSLP
- Pin Count: 2
- Features: Other, Single
- RoHS Compliant: RoHS Compliant
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
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Supplier: Radwell International
Description: RECTIFIER, 10A, 1.2KV, TO-220ACFP ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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-leaded, mil-qualified (QPL), hermetically sealed, fully tested, high voltage diode. Tested in accordance with Mil-Prf-19500/577, the 1N6535 is available as a JANTX, or JANTXV device. Electrical specifications include 10kV, 25mA, 70ns. Mil (read more)
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The SMF150 high voltage diode features 15kV reverse voltage in the smallest package available. Measuring just 0.450" l x 0.120" w x 0.130" h (11.43mm l x 3.048mm w x 3.302mm h), it (read more)
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VMI offers axial-lead, glass-body diodes ranging from 2kV to 20kV. One example is our 1N6519 high voltage diode, a hermetically sealed device that can (read more)
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voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
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the option of high voltage diodes in a clear epoxy package without embedded LEDs — available in 10kV, 15kV and 20kV. These high voltage, hermetically sealed (read more)
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Ultra High Power 10 kV, 50 A SiC PiN Diodes
Pulsed forward I-V characteristic of a large 10 kV diode with a 3.75 V forward drop at 50 A and 5.9 V forward drop at 328 A indicating a high level of conductivity modulation.
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Carrier lifetime measurements in 10 kV 4H-SiC diodes
It is worth noting that the degree of base modulation in the 10 kV diodes under !.tudy (with W/L=5.8) is higher than that in 6 kV diodes with lower K/L=3 [3].
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High power, drift-free 4H-SiC PiN diodes
These 10 kV diodes demonstrate pulsed current handling capability up to 328 A which represents over 3 MW ofpulsed power.
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High voltage semiconductor technologies
Fig. 5: Waveforms of snubberless turn-off for a 91mm 10 kV Diode (left) and IGCT (right), IT=2 kA.
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Design and Analysis of a 270kW Five-level DC/DC Converter for Solid State Transformer Using 10kV SiC Power Devices
The anti-parallel 10kV diodes conduct only very small amount of time and there is no reverse recovery loss.
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High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters
Specifically, for 10 kV diodes , the lifetime should be no shorter than 1 μs.
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FAQs > Diodes
Question: Can I operate an axial-leaded 10KV diode without it arcing from lead-to-lead?
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Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
Wave forms of reverse recovery for a 10 kV diode demonstrator with area 40 cm2 at Tj = 130 °C, and VDC = 6000 V, IT=2.0 kA.
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Emerging silicon carbide power electronics components
reccnt results showing 10 kV diodes with stable forward .
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Physical models for bipolar device simulation and their effects on cutoff frequency
Simulation of Proton-Induced Local Lifetime Reduction in 10 kV Diodes .