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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 10A, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 10,000 milliamps
- VCEO: 100 volts
- VCBO: 100 volts
- PD: 125,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 10A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- IC(max): 10,000 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- fT: 1.5 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: transistor, BJT, switching, amplification, 70V, 10A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2075A
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 10A. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 10A, Bipolar Transistor, Single Bipolar
- IC(max): 10,000 milliamps
- VCEO: 400 volts
- PD: 80 milliwatts
- TJ: 150 C
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.0183ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; No. of Pins:8PinsRoHS Compliant: Yes
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Transistors - TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MIMD10A-7 -- 058918-MIMD10A-7Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 058918-MIMD10A-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100, 10k Resistor - Emitter Base (R2) (Ohms): 10k
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 100V 10A 3.1W 1 N-Channel SOT-223-3 MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased PREBIASED COMP.
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185563-IMH10A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 100V, 10A TO247; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 10 Amps 1000V 4 Rds
- Features: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 058919-MIMD10A-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100, 10k Resistor - Emitter Base (R2) (Ohms): 10k
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-10
- IC(max): 1,000 milliamps
- VCEO: 20 volts
- VCBO: 25 volts
- Features: Bipolar RF Transistors, Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 100 volts
- fT: 100 MHz
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 450V 10A, TO-220
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 10A, TO-3-2; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 1350pF @ 25V
- V(BR)DSS: 600 volts
- PD: 45,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 225mW 60@4mA,10V 50mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 50 milliamps
- VCEO: 25 volts
- fT: 650 MHz
- PD: 225 milliwatts
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Description: Integrated Circuits (ICs) - Transistors - MOSFETs
- Features: MOSFET
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN 80V 10A, TO-220 PKG
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -100V, -10A, TO-220-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PRMH10/SOT1268 DFN1412-6
- Features: Bipolar RF Transistors
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR PNP DARLINGTON 100V 10A, TO-247 PKG
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: -60 volts
- IC(max): -10 milliamps
- PD: 1.5 milliwatts
- TJ: 175 C
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors BIP PNP 10A 100V
- VCEO: 100 volts
- IC(max): 10,000 milliamps
- PD: 125,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: -40 volts
- IC(max): -10 milliamps
- PD: 1.3 milliwatts
- TJ: 175 C
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR582D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 100 volts
- IC(max): 10 milliamps
- PD: 1.5 milliwatts
- TJ: 175 C
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR582D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: Nexperia B.V.
Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - NPN complement Nexperia - JEITA - JEDEC BCX52T SOT89 SC-62 TO-243 BCX55T BCX52-10T BCX55-10T BCX52-16T BCX55-16T Features and benefits High
- VCEO: -60 volts
- IC(max): -1 milliamps
- PD: 500 milliwatts
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, PNP, -45V, -0.5A, 10
- Features: Other
- Polarity: PNP
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 8 dB
- Output Power: 10 watts
- Operating Frequency: 3,100 to 3,400 MHz
- Features: Other, Power BJT Transistors
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Description: IGBT 1700V 10A 140W TO247
- Output Power: 140 watts
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN, PNP
- Features: Other
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