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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:4MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 120V; Transistor Polarity:NPN; Collector Emitter Voltage Max:120V; Continuous Collector Current:15A; Power Dissipation:180W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:6MHz; MSL:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: DARLINGTON TRANSISTOR, NPN, 120V; Transistor Polarity:NPN; Collector Emitter Voltage Max:120V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30A, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 30A, 120V, Bipolar Transistor, Single
- IC(max): 30,000 milliamps
- VCEO: 120 volts
- VCBO: 120 volts
- PD: 200,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANS NPN 120V 0.5A MINIP3-F1 / Bipolar (BJT) Transistor NPN 120 V 500 mA 120MHz 1 W Surface Mount MiniP3-F1 Product overview: 2SD0968ARL from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic
- VCEO: 120 volts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:160MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15 A, 120 V. Search-friendly keywords include transistor, BJT, switching, amplification, 15 A, 120 V, Bipolar Transistor, Single Bipolar
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097034-STL120NH02V Packaging: Tape & Reel Number of Pins: 8 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 73 pct.
- Features: MOSFET, Other
- Package Type: SOT3
- Packing Method: Tape Reel
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 120 Amps 1200V
- Features: IGBT
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Power Gain: 16.5 dB
- Output Power: 120 watts
- Operating Frequency: 2,700 to 3,100 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 093854-TIP120 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Plastic Lds
- Features: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 30V 120A 2.5mΩ 2.5V 1 Piece P-Channel TO-252 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1267402-TIP120G Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer
- TJ: -65 to 150 C
- Power Gain: 1,000 dB
- Output Power: 2 watts
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 875238-IRLD120 Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP Package: Tube Package: 4-DIP (0.300", 7.62mm) Mounting: Through Hole Part Status: Obsolete Family Name: IRLD120 Categories:
- TJ: -55 to 175 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: Transistor; Bipolar; PNP; ComplementaryHigh-Power; T03; 15A; 120V CEO
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-220 Darlington Transistors ROHS
- Features: Darlington
- Package Type: TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors 5A 60V Bipolar Power NPN
- Features: Darlington
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Supplier: Utmel Electronic Limited
Description: Transistor MOSFET N-ch 40V 120A D2PAK
- V(BR)DSS: 40 volts
- rDS(on): 0.0025 ohms
- PD: 208,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET HEMT 50V 55-QQ
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity AEC-Q101 qualified
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Description: IGBT 1200V 220A 400W SMPD
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN - Darlington 60V 5A 2W Through Hole TO-220-3
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: BC846B is the BVCEO65V transistor for audio frequency small signal amplifier
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP low VCEsat transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: 50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
- Features: Bipolar RF Transistors, N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optoisolator
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Description: SILICON CARBIDE POWER MOSFET 120
- V(BR)DSS: 1,200 volts
- IDSS: 90,000 milliamps
- Features: MOSFET, Other
- Package Type: TO-263
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR375P5 is Low saturation voltage transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: ON SEMICONDUCTOR NGTB40N120SWG IGBT Single Transistor, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 Pins
- VCE(on): 2 volts
- IC(max): 80 amps
- PD: 535,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Integra Technologies, Inc.
Description: Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The
- Power Gain: 10.4 dB
- Operating Frequency: 3,100 to 3,500 MHz
- Output Power: 120 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Nexperia B.V.
Description: NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector
- Features: Other
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