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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Plastic Lds
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 60V 5A 65W
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors NPN Power Darlington
- Transistor Type: Darlington
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Supplier: ODG (Origin Data Global)
Description: POWER BIPOLAR TRANSISTOR, 5A, 60
- Package Type: TO-220, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: IGBT Transistors / Modules ROHS
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN DARL 60V TO220-3
- Package Type: TO-220, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097034-STL120NH02V Packaging: Tape & Reel Number of Pins: 8 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat
- Package Type: SOT3
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: 30V 120A 2.5mO 2.5V 1 Piece P-Channel TO-252 MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: FUJI ELECTRIC Semiconductors 2DI150Z-120
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 093854-TIP120 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C
- Package Type: TO-220, SOT3, Other
- Polarity: NPN, Other
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 40ms/50%/32V ¦ 2.7-3.1GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 100us/20%/30V ¦ 2.7-3.1GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ¦ 1.030 and 1.090 GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 300us/10%/50V ¦ 1.2-1.4GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: TO-220, Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 837639-SIHFR120 Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor, 120A, 300V, N-Channel
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: TIP120 - Power Bipolar Transistor, 5A, 60V, NPN, TO-220AB, Plastic/Epoxy, 3 Pin
- Package Type: TO-220, Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors, Bipolar RF Transistors, Power MOSFET
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
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Description: Integrated Circuits (ICs) - Transistors - MOSFETs
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-220 Darlington Transistors ROHS
- Package Type: TO-220
- Transistor Type: Darlington
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Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
- Polarity: N-Channel
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN - Darlington 60V 5A 2W Through Hole TO-220-3
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET HEMT 50V 55-QQ
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: TO-92
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Supplier: ROHM Semiconductor GmbH
Description: BC846BHZG is the BVCEO>65V transistor for audio frequency small signal amplifier
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and
- Package Type: SOT89, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Automotive
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Description: IGBT MODULE 1200V 140A 517W SP6P
- Packing Method: Bulk Pack, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
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Supplier: Utmel Electronic Limited
Description: IGBT Transistors 1200V/15A IGBT SOLAR/UPS
- IC(max): 30 amps
- PD: 156000 milliwatts
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: N-Channel, Other
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics