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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:4MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 120V; Transistor Polarity:NPN; Collector Emitter Voltage Max:120V; Continuous Collector Current:15A; Power Dissipation:180W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:6MHz; MSL:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: DARLINGTON TRANSISTOR, NPN, 120V; Transistor Polarity:NPN; Collector Emitter Voltage Max:120V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30A, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 30A, 120V, Bipolar Transistor, Single
- IC(max): 30,000 milliamps
- VCEO: 120 volts
- VCBO: 120 volts
- PD: 200,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANS NPN 120V 0.5A MINIP3-F1 / Bipolar (BJT) Transistor NPN 120 V 500 mA 120MHz 1 W Surface Mount MiniP3-F1 Product overview: 2SD0968ARL from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic
- VCEO: 120 volts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, PNP, -120V; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:160MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN Product overview: 2SD1163 from Hitachi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097034-STL120NH02V Packaging: Tape & Reel Number of Pins: 8 Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 73 pct.
- Features: MOSFET, Other
- Package Type: SOT3
- Packing Method: Tape Reel
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 120 Amps 1200V
- Features: IGBT
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Power Gain: 16.5 dB
- Output Power: 120 watts
- Operating Frequency: 2,700 to 3,100 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 093854-TIP120 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-220
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Plastic Lds
- Features: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 30V 120A 4.4mΩ 2.5V 1 N-Channel TO-252 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1267402-TIP120G Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Temperature Range - Operating: -65°C ~ 150°C Manufacturer
- TJ: -65 to 150 C
- Power Gain: 1,000 dB
- Output Power: 2 watts
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 875238-IRLD120 Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP Package: Tube Package: 4-DIP (0.300", 7.62mm) Mounting: Through Hole Part Status: Obsolete Family Name: IRLD120 Categories:
- TJ: -55 to 175 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 60V 1000@3V,3A NPN 5A 2W TO-220 Darlington Transistors ROHS
- hfe: 1,000
- VCEO: 60 volts
- IC(max): 5,000 milliamps
- PD: 2,000 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors 5A 60V Bipolar Power NPN
- Features: Darlington
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Supplier: Allied Electronics, Inc.
Description: Transistor; Bipolar; PNP; ComplementaryHigh-Power; T03; 15A; 120V CEO
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET HEMT 50V 55-QQ
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Description: IGBT 1200V 220A 400W SMPD
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Nexperia B.V.
Description: PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity AEC-Q101 qualified
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: Transistor MOSFET N-ch 40V 120A D2PAK
- V(BR)DSS: 40 volts
- rDS(on): 0.0025 ohms
- PD: 208,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN - Darlington 60V 5A 2W Through Hole TO-220-3
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Supplier: ROHM Semiconductor GmbH
Description: BC846B is the BVCEO65V transistor for audio frequency small signal amplifier
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP low VCEsat transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350X Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: 50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
- Features: Bipolar RF Transistors, N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optoisolator
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR375P5 is Low saturation voltage transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
- Package Type: SOT89
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Description: SILICON CARBIDE POWER MOSFET 120
- V(BR)DSS: 1,200 volts
- IDSS: 36,000 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: ON SEMICONDUCTOR NGTB40N120SWG IGBT Single Transistor, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 Pins
- VCE(on): 2 volts
- IC(max): 80 amps
- PD: 535,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Integra Technologies, Inc.
Description: Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 120 watts of peak output power. Specified operation is with Class AB bias. The broadband test fixture
- Power Gain: 10 dB
- Operating Frequency: 2,700 to 3,500 MHz
- Output Power: 120 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Nexperia B.V.
Description: NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP-Q Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector
- Features: Other
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo