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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -12V, -2A. Search-friendly keywords include transistor, BJT, switching, amplification, -12V, -2A, Bipolar Transistor, Single Bipolar
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 2A, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 3,000 milliamps
- VCEO: 12 volts
- VCBO: 12 volts
- fT: 180 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2A, MOSFET Transistor, FET, MOSFET
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 1.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 1.2A, Bipolar Transistor, Single Bipolar Transistors.
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: MOSFET, P-CH, -12V, -2A, TSMT; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -12V, -2A, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-12V; Transition Frequency ft:100MHz; Power Dissipation Pd:460mW; DC Collector Current:-2A; DC Current Gain hFE:250hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 12V, 2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:360MHz; Power Dissipation Pd:500mW; DC Collector Current:2A; DC Current Gain hFE:270hFE; Transistor Case RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: 12P DIP Round Hole -40℃~+105℃ 7.62mm 2.54mm DIP-12 IC / Transistor Socket ROHS
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 25V, 1.2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:200MHz; Power Dissipation Pd:500mW; DC Collector Current:1.2A; DC Current Gain hFE:820hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039843-FQP32N12V2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 120 volts
- PD: 150,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN DARL 100V 2A
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039920-FQPF32N12V2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 120 volts
- PD: 50,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 24 Amps 1200V 2.7 Rds
- Features: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BIP PNP 1A 12V
- Features: Bipolar RF Transistors
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
- V(BR)DSS: 400 volts
- rDS(on): 3.6 ohms
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 130960-2SK3078A(TE12L,F) Packaging: Cut Reel Voltage Rating: 10V Current Rating: 500mA Frequency: 470MHz Current - Test: 50mA Gain: 8dB Transistor Polarity: N-Channel Voltage - Test: 4.5V Power - Output: 28dbm Categories:
- Polarity: N-Channel
- Features: Other
- Package Type: SOT3
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SOT-89
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062218-PVR100AD-B12V Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, DARLINGTON, NPN, 60V 2A TO-220 PKG
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, High Voltage Horizontal Deflection Output, 800 V Collector to Emitter Voltage
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 100 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 100 volts
- IC(max): 2 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB)
- VCEO: 100 volts
- IC(max): 2 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 750mW 340@500mA,2V 5A NPN SOT-89 Bipolar Transistors - BJT ROHS
- IC(max): 5,000 milliamps
- VCEO: 30 volts
- fT: 150 MHz
- PD: 750 milliwatts
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 450V 8A 100W Through Hole TO-220-3
- Polarity: NPN
- Features: Other
- Package Type: TO-220
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SA2071P5 is a power transistor for high speed switching.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased NPN+PNP SOT-563 50V VCC 0.1A IC
- Features: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD2873 series Low collector
- hfe: 360
- VCEO: 50 volts
- IC(max): 2 milliamps
- PD: 15 milliwatts
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Supplier: Utmel Electronic Limited
Description: Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
- Features: Bipolar RF Transistors
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Package Type: SOT89
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