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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 25V 1.2A
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 15A, 60V PNP Power Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BIP PNP 1A 12V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 25V 2A
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 12P DIP Round Hole -40?~+105? 7.62mm 2.54mm DIP-12 IC / Transistor Socket ROHS
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Supplier: ODG (Origin Data Global)
Description: PNP+NPN DIGITAL TRANSISTOR (CORR
- Package Type: Other
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 12.5W 100@100mA,2V 3A NPN TO-126 Bipolar Transistors - BJT ROHS
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 12V 4.3A 45mO@4.5V,4.3A 1.3W 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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Supplier: ODG (Origin Data Global)
Description: PB-FREE POWER TRANSISTOR PW-MINI
- Package Type: Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Darlington Transistors 2A 100V Bipolar Power NPN
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors, Darlington
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 12V/1A Sch Comb
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode this common base device supplies a minimum of 12 watts of peak pulse power
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 450V 8A 100W Through Hole TO-220-3
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Radwell International
Description: TRANSISTOR, 400V, 12A. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Rochester Electronics
Description: Power Bipolar Transistor, 8A, 450V, NPN, TO-220AB, 3 Pin
- Package Type: TO-220, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Quality level for Engineering
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors SMD plastic package Two different gain selections Applications General-purpose switching and amplification
- Package Type: Other
- TJ: 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067382-FQB32N12V2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive
- PD: 3750 to 150000 milliwatts
- Package Type: TO-263, SOT3, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Qorvo
Description: The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 976283-2SB1020A(F) Polarity: PNP Number of Elements: 1 Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low
- Package Type: TO-220, SOT3
- Polarity: PNP, Other
- TJ: -55 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: ?? 50V SOP-16 Darlington Transistor Arrays ROHS
- TJ: -40 to 85 C
- VCEO: 50 volts
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Supplier: Utmel Electronic Limited
Description: STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
- IC(max): 200 amps
- Number of Transistors in the Chip: 1
- PD: 600000 milliwatts
- Polarity: N-Channel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037220-2SC5819(TE12 L,F) Packaging: Tape & Reel (TR) Categories: RF Transistors(BJT) Popularity: Low Fake Threat In
- PD: 1000 milliwatts
- Package Type: SOT3
- Packing Method: Tape Reel, Other
- VCEO: 20 volts
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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