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Supplier: Skyworks Solutions, Inc.
Description: amplifiers, the device meets the extremely demanding needs of small cell infrastructure architectures. Designed for LTE, WCDMA and HSDPA air interfaces operating in the 860 MHz to 894 MHz bands, the AWB7225 delivers up to +27 dBm of LTE (E-TM1.1) power through an
- Frequency Range: 860 to 894 MHz
- Minimum Gain: 29.5 dB
- Maximum Gain: 29.5 dB
- Output Power( P1dB): 27 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The AWB7124 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications.Its high power efficiency and low
- Frequency Range: 728 to 768 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The AWB7129 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low
- Frequency Range: 925 to 960 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The AWB7125 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low
- Frequency Range: 860 to 894 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Qorvo
Description: Qorvo's TQP9107 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package. The amplifier is able to achieve 31% power added efficiency at +27 dBm output power while operating with a low 84 mA idle current. The amplifier is designed
- Frequency Range: 600 to 960 MHz
- Minimum Gain: 35.5 dB
- Maximum Gain: 35.5 dB
- Output Power( P1dB): 31.4 dBm
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Supplier: Texas Instruments
Description: 1.5A, 24V, 17MHz, Power Operational Amplifier 20-SO PowerPAD -40 to 85
- Supply Voltage (VS): 7 to 24 volts
- Input Offset Voltage (VOS): 20 millivolts
- Quiescent Current (IQ): 50,000.00000000001 microamps
- CMRR: 70 dB
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Supplier: Richardson RFPD
Description: Driver or Pre--driver Amplifier for Doherty Power Amplifiers. The MMG20241H is a 1/4 W high gain amplifier designed as a driver or pre--driver for Doherty power amplifiers in wireless infrastructure equipment operating in the 450 to 3800 MHz
- Frequency Range: 450 to 3,800 MHz
- Maximum Gain: 17.8 dB
- Output Power( P1dB): 23.9 dBm
- Minimum Operating Voltage: 5 volts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Wide Band Low Power Amplifier, 0MHz Min, 2500MHz Max, 1 Func, BIPolar, PLASTIC, SC-70, SOT-343, 4 PIN Product overview: ADA-4743-TR1 from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing.
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Wide Band Low Power Amplifier, 0MHz Min, 800MHz Max, 1 Func, BIPolar, PLASTIC PACKAGE-4 Product overview: MSA-0686-TR1 from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Wide Band Low Power Amplifier, 0MHz Min, 2300MHz Max, 1 Func, BIPolar, PLASTIC, SOT-143, 4 PIN Product overview: MSA-0311-TR1 from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Wide Band Low Power Amplifier, 0MHz Min, 2700MHz Max, 1 Func, BIPolar, CERAMIC, MICRO-X, 4 PIN Product overview: MSA-0236-TR1 from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is
- Features: Other
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Supplier: Newark, An Avnet Company
Description: MEDIUM POWER AMPLIFIER, 50 MHZ TO 1 GHZ
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Supplier: Fairview Microwave Inc.
Description: specs on this medium power amplifier from Fairview Microwave can be found in the details on the RF power amplifier datasheet specifications PDF above. Our medium power amplifier is part of over one million RF, microwave and millimeter wave components in
- Frequency Range: 500 to 4,000 MHz
- Minimum Gain: 30 dB
- Output Power( P1dB): 30 dBm
- Maximum Operating Voltage: 12 volts
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Supplier: Renesas Electronics Corporation
Description: The ICL761X series is a family of CMOS operational amplifiers. These devices provide the designer with high performance operation at low supply voltages and selectable quiescent currents, and are an ideal design tool when ultra low input current and low power dissipation are
- Supply Voltage (VS): 2 to 16 volts
- Supply Current (IS): 0.01 milliamps
- Input Offset Voltage (VOS): 4 millivolts
- Input Bias Current (IBIAS): 0.000001 to 0.00005 µA
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Supplier: Fairview Microwave Inc.
Description: at 50 Watt. Our SMA high power RF amplifier design has a 47 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5056 is rated with a Psat of 47 dBm. Our radio frequency high power amplifier is constructed for a minimum frequency of
- Frequency Range: 1.5 to 100 MHz
- Maximum Gain: 47 dB
- Maximum Operating Voltage: 32 volts
- Amplifier Type: Power Amplifier
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Supplier: Qorvo
Description: Qorvo's TQP9218 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits. The amplifier provides 31 dB gain and +24.5 dBm linear power over the 1.805 – 1.880 GHz frequency
- Frequency Range: 1,805 to 1,880 MHz
- Minimum Gain: 31.5 dB
- Maximum Gain: 31.5 dB
- Output Power( P1dB): 33 dBm
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Supplier: Allied Electronics, Inc.
Description: AMPLIFIER; LOW POWER JFET INPUT OP AMP;+/- 18V; +/- 30V; 1MHZ; PDIP
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Supplier: Radwell International
Description: LOW POWER AMPLIFIER, 10-300 MHZ, 1.5/1.6 VSWR, 2.8 DB. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Utmel Electronic Limited
Description: Narrow Band High Power Amplifier, 1800MHz Min, 2200MHz Max, 1 Func, GREEN, PLASTIC, MO-166, 20 PIN
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Supplier: AR Modular RF
Description: The Model KAW1040 is a general-purpose, wideband RF power amplifier for signals in the 1 MHz to 512 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 20 Watts into a
- Frequency Range: 1 to 512 MHz
- Minimum Gain: 43 dB
- Output Power( P1dB): 43.01029995663981 dBm
- Gain Flatness: 2 dB
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Supplier: Broadcom Inc.
Description: The ACPM-9301 is a fully matched 10-pin surface mount module developed for TD-SCDMA, TD-LTE Band34, Band39. This power amplifier module operates in the 1880-2025MHz bandwidth and features CoolPAM circuit technology that supports two power modes—low and high. Features Thin
- Frequency Range: 1,880 to 2,025 MHz
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz Output Volts: 0 – 25V rms. (inquire about available output transformers) Output Power: 50W, 250W, 500W and
- Frequency Range: 0.00001 to 1 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Minimum Operating Voltage: 115 volts
- Maximum Operating Voltage: 230 volts
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Supplier: Krohn-Hite Corporation
Description: Krohn-Hite Wideband Power Amplifiers are designed to meet today's industrial needs where wideband, precision performance is required. Applications include: meter calibration, piezo transducer driving, bridging applications requiring high input and low output impedance, low distortion
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0 dBm (1
- Frequency Range: 1,700 to 2,400 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 45 dB
- Output Power( P1dB): 45.44068044350276 dBm
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Supplier: Wolfspeed
Description: The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of output power each. It is available in a 14-lead plastic overmold
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Supplier: Wolfspeed
Description: 2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide,
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Supplier: Fairview Microwave Inc.
Description: frequency of 820 MHz and a maximum of 960 MHz. Additional specs on this medium power amplifier from Fairview Microwave can be found in the details on the RF power amplifier datasheet specifications PDF above. Our medium power amplifier is part
- Frequency Range: 820 to 960 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 15 dB
- Output Power( P1dB): 29.000000000000004 dBm
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Supplier: Richardson RFPD
Description: 900 MHz 802.11g 1W Amplifier
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Supplier: Texas Instruments
Description: 10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier 10-VSSOP -40 to 125
- Supply Voltage (VS): 1.8 to 5.5 volts
- Input Offset Voltage (VOS): 2.5 millivolts
- Quiescent Current (IQ): 500.00000000000006 microamps
- CMRR: 76 dB
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Supplier: Renesas Electronics Corporation
Description: The HFA1105 is a high speed, low power current feedback amplifier built with Intersil's proprietary complementary bipolar UHF-1 process.brbr This amplifier features an excellent combination of low power dissipation (58mW) and high performance. The slew rate,
- Supply Voltage (VS): 9 to 11 volts
- Supply Current (IS): 5.8 milliamps
- Input Offset Voltage (VOS): 5 millivolts
- Input Bias Current (IBIAS): 2 to 15 µA
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Supplier: Newark, An Avnet Company
Description: OP AMP, 200MHZ L POWER, POWERWISE; No. of Amplifiers:1 Amplifier; Bandwidth:235MHz; Slew Rate:1300V/µs; Supply Voltage Range:4.5V to 33V; Amplifier Case Style:SOT-23; No. of Pins:5Pins; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
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Supplier: Qorvo
Description: The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo’s advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings. QPA9510 is designed
- Open-Loop Gain (AVOL): 33.8 dB
- Supply Voltage (VS): 3.8 volts
- Bandwidth: 100 to 1,000 MHz
- Features: Other, Power Operational Amplifiers
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Supplier: Fairview Microwave Inc.
Description: rated at 20 dBm. Our SMA medium power RF amplifier design has a 13.6 dB typical gain. Fairview RF medium power amplifier part number FMAM5085 is rated with a Psat of 20 dBm. Our radio frequency medium power amplifier is constructed for a minimum frequency of
- Frequency Range: 1,000 to 2,500 MHz
- Maximum Gain: 13.6 dB
- Output Intercept Point (IP3): 41.99999999999999 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Wolfspeed
Description: 38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced
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Supplier: Newark, An Avnet Company
Description: AUDIO OPERATIONAL AMPLIFIER, 180MHZ, SOIC-8; Amplifier Class:AB; No. of Channels:1 Channel; Output Power:-; Supply Voltage Range:± 2.5V to ± 16V; Amplifier Case Style:SOIC; No. of Pins:8Pins; Load Impedance:800ohm; Product Range:- RoHS Compliant: Yes
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The QPA3314 is a Hybrid Power Doubler amplifier module. The part employs GaAs/GaN die and is operated from 45 MHz to 1794 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. (read more)
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SKY66318-11, a new addition to our family of high-efficiency power amplifiers (PA) designed for the stringent (read more)
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put, amplifiers are electronic devices that increase the power of a signal. In other words, they increase the amplitude of a signal, making it stronger than the given output. Though the operation of an amplifier is theoretically quite simple, there are a lot of factors they have to deal with. As such (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
The QPL1840 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 17 dB of gain and low noise from 5 MHz to 1800 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as (read more)
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45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
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The QPP0025 Balun is designed for applications that require small, low-cost, and high reliable surface mount components. The units are built lead-free and RoHS compliant. This balun offers low insertion loss combined with a high RF power capability across a broad (read more)
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, or difficult to operate for small-scale dynamic testing applications. The VSA Series Mini Power Amplifiers are engineered specifically for compact precision vibration test systems, providing high (read more)
Browse Power Amplifiers Datasheets for ECON Technologies Co.,Ltd -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Key Features and Benefits: Wide Frequency Range:Programmable from 1?MHz to 200?MHz to meet diverse design requirements. Excellent Stability:AT-cut resonator ensures temperature stability (read more)
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experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
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SPA-2118 datasheet - 850 MHz, 1 Watt power amplifier with active bias. : Datasheets for Electronic Components and Semiconductors
850 MHz 1 watt power amplifier with active bias.
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Datasheet for SPA-2118, 850 MHz, 1 Watt power amplifier with active bias.. SPA-2118 .pdf : 1.000.000 datasheets for Electronic Components and Semiconductors
850 MHz 1 Watt Power Amplifier with Active Bias .
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Vector drop-on-demand production of tungsten carbide-cobalt tooling inserts by three dimensional printing
[24] “Krohn-Hite Model 7500 1 MHz Wideband Power Amplifier ,” Krohn-Hite Corporation.
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Page 9. Semiconductor parts with 118 in root number
850 MHz 1 watt power amplifier with active bias.
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Mechanical forcing of the wake of a flat plate
Forcing waveforms signals were previously amplified by a HSA4011 (DC- 1 MHz ) power amplifier .
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STANF SPA-1318 Datasheet.
2150 MHz 1 watt power amplifier with active bias. in 8-pin SOIC package.
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Status of LLRF system development for European XFEL
…and four way power splitter at the output to eliminate phase drifts between outputs; low phase noise dividers in separate modules to minimize heating of individual modules due to their power dissipation , 9 MHz 1 W power amplifier and four way power…
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Publications of LASL research, 1975
27- 1 100 MHZ POWER AMPLIFIER DESIGN AND CONTROL FOR A HEAVY ION ACCELERATOR. LASL.
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Guided wave generation, sensing and damage detection using in-plane shear piezoelectric wafers
A wideband (DC- 1 MHz ) power amplifier (Krohn-Hite-7602) was used to amplify the excitation voltage.
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Scattering of fundamental Lamb wave modes obliquely incident on a surface breaking crack in a plate
Further, the waveform is amplified with a 1 MHz bandwidth power amplifier (Krohn- Hite 7500) with 100x fixed amplification mode to obtain a 100V peak-to-peak excitation signal.