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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -200V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:200V; DC Collector Current:16A; Power Dissipation Pd:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency ft:4MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:17A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer
- gfs: 0.015 kS
- PD: 2.5 milliwatts
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20 A, 200 V. Search-friendly keywords include transistor, BJT, switching, amplification, 20 A, 200 V, Bipolar Transistor, Single
- IC(max): 15,000 milliamps
- VCEO: 200 volts
- VCBO: 200 volts
- PD: 150,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, Bipolar Transistor, Solid State Relays. This listing supports clearer
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 200V. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 200V, Bipolar
- Features: Bipolar RF Transistors
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Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications. Particularly suited as drivers in
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -200V TO-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:16A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:- RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: Bipolar Transistor; N Channel; 375dc 200v
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770198-BLF8G22LS-200V,118 Packaging: Reel package Package: SOT-1244B Frequency: 2.11GHz ~ 2.17GHz Current - Test: 2A Gain: 19dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 55W Family Name: BLF8G22LS-200V
- Output Power: 55 watts
- Power Gain: 19 dB
- Operating Frequency: 2,110 to 2,170 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; 45V; 200mA; SOT323; 200mW
- VCEO: 45 volts
- Output Power: 0.2 watts
- TJ: 150 C
- Number of Transistors in the Chip: 1
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 25V 200mW
- VCEO: 25 volts
- IC(max): 200 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN GP 200MA 40V, TO-92 PKG
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884907-MJE200 Features: Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case /
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 40V 5A DPAK
- Features: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V AEC-Q101 qualified Applications General switching and amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1161658-CJD200 Manufacturer Homepage: www.centralsemi.com Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Nexperia B.V.
Description: PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904 Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO = -40 V AEC-Q101 qualified Applications General switching and amplification
- Features: Other
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
- VCE(on): 1.2 volts
- IC(max): 200 amps
- tr: 112 ns
- PD: 600,000 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 058921-MJD200G Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 65MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 100V 12A 54W 200mΩ@10V,5A 3V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP DARL 80V 25A TO247-3
- IC(max): 25,000 milliamps
- VCEO: 80 volts
- Output Power: 130 watts
- Features: Bipolar RF Transistors, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 625mW 70@50mA,2V 500mA TO-92-3 Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 50 volts
- fT: 200 MHz
- PD: 625 milliwatts
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Supplier: ODG (Origin Data Global)
Description: TRANS 2PNP 45V 0.5A SSOT-6
- IC(max): 500 milliamps
- VCEO: 45 volts
- Operating Frequency: 300 MHz
- Output Power: 0.7 watts
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal RF parameters.
- Power Gain: 9.4 dB
- Operating Frequency: 3,000 MHz
- Output Power: 200 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
- IC(max): 200 milliamps
- VCEO: 50 volts
- PD: 350 milliwatts
- TJ: -55 to 150 C
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
- Polarity: NPN
- Features: Other
- Package Type: TO-251 / TO-252
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Supplier: Microchip Technology, Inc.
Description: Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast
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Supplier: Allied Electronics, Inc.
Description: NPN Silicon Complementary Transistors Audio Power Output, Collector-Base Voltage 200 V Recommended for 100W high fidelity audio frequency amplifier output stage
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Optocoupler Single-Transistor
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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