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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200MA, MOSFET Transistor, Solid
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 200MA, MOSFET Transistor, Single FETs, MOSFETs.
- V(BR)DSS: 200 volts
- PD: 2 milliwatts
- TJ: -55 to 150 C
- MOSFET Operating Mode: Enhancement
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 200MA. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 200MA, Bipolar Transistor, Single
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 16V, 200MA. Search-friendly keywords include transistor, BJT, switching, amplification, 16V, 200MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer
- Features: Bipolar RF Transistors, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 40V, 200mA, 200mW, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:200mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -150V, -200mA, 200mW, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage Max:150V; Continuous Collector Current:200mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, -40V, -200mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:200mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN GP 200MA 40V, TO-92 PKG
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP/PNP, 40V, 200MA, SOT666; Transistor Polarity:Dual PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:200mA; Power Dissipation:240mW; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: NPN TRANSISTOR 200MA 400V SOT-23
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; 45V; 200mA; SOT323; 200mW
- VCEO: 45 volts
- Output Power: 0.2 watts
- TJ: 150 C
- Number of Transistors in the Chip: 1
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR PNP GP SS 200MA 40V, TO-92 PKG
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V AEC-Q101 qualified Applications General switching and amplification
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904 Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO = -40 V AEC-Q101 qualified Applications General switching and amplification
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: Transistor: 200mA 200mW NPN General-Purpose Amplifier, SOT-23, 7IN. Reel
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Supplier: Allied Electronics, Inc.
Description: Transistor: 200mA 625mW NPN General-Purpose Amplifier, TO-92
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
- IC(max): 200 milliamps
- VCEO: 50 volts
- PD: 350 milliwatts
- TJ: -55 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 064366-SGSD200 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-247-3 Maximum Current Collector: 25A VCEO Maximum
- Features: Other
- Polarity: PNP
- Package Type: SOT3, TO-247
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884907-MJE200 Features: Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Categories: Discrete Semiconductor Products Case /
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: 5kV 1.2V DIP-4 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1161658-CJD200 Manufacturer Homepage: www.centralsemi.com Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Epitaxial Sil
- Features: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistor Output Optocouplers CTR 200-400% 5mA
- Operating Temperature: -55 to 110 C
- Input: DC
- Features: Other
- Output: Phototransistor
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023727-MMBT200 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Family Name: MMBT200 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C
- Operating Temperature: -55 to 150 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 625mW 70@50mA,2V 500mA TO-92-3 Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 50 volts
- fT: 200 MHz
- PD: 625 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: SST3906HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Photocoupler DC input 80V 50mA
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal RF parameters.
- Power Gain: 9.4 dB
- Operating Frequency: 3,000 MHz
- Output Power: 200 watts
- Features: Bipolar RF Transistors, Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 45V 500mA 250MHz 625mW Through Hole TO-92-3
- Features: Other
- Polarity: PNP
- Package Type: TO-92
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating
- Power Gain: 12.1 dB
- Operating Frequency: 1,200 to 1,400 MHz
- Output Power: 200 watts
- Features: Bipolar RF Transistors, Other
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 1.5GHz 400mW Surface Mount 3-MCP
- Polarity: NPN
- Features: Other
- Package Type: SOT323
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