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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 40V 5A DPAK
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 5A 25V 15W NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Epitaxial Sil
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 5A 25V 12.5W NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770198-BLF8G22LS-200 V,118 Packaging: Reel package Package: SOT-1244B Frequency: 2.11GHz ~ 2.17GHz Current - Test: 2A Gain: 19dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 55W
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Microchip Technology, Inc.
Description: exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with
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Supplier: Microchip Technology, Inc.
Description: exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified pulsing conditions and Vcc=44V, this common base device supplies a minimum of
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; 45V; 200mA; SOT323; 200mW
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 884907-MJE200 Features: Bipolar (BJT) Transistor NPN 40 V 5 A 65MHz 15 W Through Hole TO-126 Package: Bulk Package: TO-225AA, TO-126-3 Mounting: Through Hole Part Status: Obsolete Categories: Discrete
- Package Type: SOT3, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 064366-SGSD200 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-247-3 Maximum Current
- Package Type: TO-247, SOT3, Other
- Polarity: PNP, Other
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200 watts of peak pulse power across the instantaneous
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 200W @ 300us/10%/44V ¦ 2.7-3.1GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased PREBIASED TRANSISTOR SOT-363 NPN 200MW
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS 2PNP 45V 0.5A SSOT-6
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP 45V 0.5A SOT23-3
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP DARL 80V 25A TO247-3
- Package Type: TO-247, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 25V 200mW
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: TO-92
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: 50 V, 200 mA NPN general-purpose transistors
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Automotive
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 625mW 70@50mA,2V 500mA TO-92-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-92
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: systems. Low thermal resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts. WPTB64A1011Ax Class C 1030/1090 MHz Bipolar RF Transistor The WPTB64A1011Ax is an application specific
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
- Package Type: TO-251 / TO-252, Other
- Polarity: NPN
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Supplier: Acme Chip Technology Co., Limited
Description: RF POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Radwell International
Description: TRANSISTOR 2AMP 200V. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ROHM Semiconductor GmbH
Description: SST3906HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- Transistor Type: General Purpose BJT
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
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(VCEO): 40V Collector-Base Voltage (VCBO): 60V Emitter-Base Voltage (VEBO): 6V Continuous Collector Current (IC): 200mA DC Current Gain (hFE): 100 to 300 Collector (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Collector-Emitter Voltage (Vceo): 40V, providing good voltage handling capability for various circuits Collector Current (Ic): Up to 200mA, suitable for moderate current amplification needs DC Current Gain (hFE): High current gain (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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