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Supplier: Utmel Electronic Limited
Description: Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN 230V 15A
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: DIP-4 Photointerrupters - Slot Type - Transistor Output ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Samsung Win Source Part Number: 1186925-IRF230 Manufacturer Homepage: www.samsung.com/Prod ucts/Semiconductor Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
- Package Type: SOT3
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 237299-BSP230 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- Package Type: SOT3, Other
- Polarity: P-Channel, Other
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: 50V 32A 50W 28mO@4.5V,10A 2V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770195-BLF8G20LS-230 VJ Packaging: Reel package Package: SOT-1239B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 1.8A Gain: 18dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 55W
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 700V 10A 230mO 67W 4V 1 N-Channel VSON-4(8x8) MOSFETs ROHS
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mA 40V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 60V 200mW
- Transistor Type: Bipolar RF Transistors
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Description: MOSFET N-CH 100V 230A SOT-227B
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: TO-252 MOSFETs ROHS
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: 60 V, N-channel Trench MOSFET
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
- Package Type: Other
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Supplier: Rochester Electronics
Description: AFT21S230 - Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 230V 150W 15A NPN TO-3PL Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 75V 230A TO263
- Package Type: TO-263, Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology
- Package Type: SOT23, Other
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: BIPOLAR TRANSISTOR, NPN, 230V; TRANSISTOR POLARITY:NPN; COLLECTOR EMITTER VOLTAGE V(BR)CEO:230V; TRANSITION FREQUENCY TYP FT:30MHZ; POWER DISSIPATION. FREE 2 YEAR RADWELL WARRANTY
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: GP BJT
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Supplier: DigiKey
Description: N-Channel 100V 230A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Richardson RFPD
Description: The MRFX600H-230MHZ evaluation board features NXP part MRFX600H and provides 600 Watts and 26 dB gain at 230 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 30W @ 32us / 2% / 50V ¦ 1.025-1.150 GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Infineon Technologies AG
Description: -of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in
- Package Type: TO-220, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: Littelfuse, Inc.
Description: These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: The AFT18S230SR3 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
- Output Power: 50 watts
- Packing Method: Tape Reel, Other
- Power Gain: 17.6 dB
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics